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Abstract: One of the major obstacles of the magnetic topological insulators (TIs) impeding their practical use is the low Curie temperature (Tc). Very recently, we have demonstrated the enhancement of the magnetic ordering in Cr-doped Bi2Se3 by means of proximity to the high-Tcferrimagneticinsulator (FMI) Y3Fe5O12 and found a large and rapidly decreasing penetration depth of the proximity effect, suggestive of a different carrier propagation process near the TI surface. Here we further present a study of the interfacial magnetic interaction of this TI/FMI heterostrucutre. The synchrotron-based X-ray magnetic circular dichroism (XMCD) technique was used to probe the nature of the exchange coupling of the Bi2−xCrxSe3/Y3Fe5O12 interface. We found that the Bi2−xCrxSe3grown on Y3Fe5O12(111) predominately contains Cr3+ cations, and the spin direction of the Cr3+ is aligned parallel to that of tetrahedral Fe3+ of the YIG, revealing a ferromagnetic exchange coupling between the Bi2−xCrxSe3 and the Y3Fe5O12.

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Abstract: We investigate the magnetic properties of Ho-doped Bi2Te3 thin films grown by molecular beam epitaxy. Analysis of the polarized X-ray absorption spectra at the Ho M5 absorption edge gives an effective 4f magnetic moment which is ∼45% of the Hund's rule ground state value. X-ray magnetic circular dichroism (XMCD) shows no significant anisotropy, which suggests that the reduced spin moment is not due to the crystal field effects, but rather the presence of non-magnetic or antiferromagnetic Ho sites. Extrapolating the temperature dependence of the XMCD measured in total electron yield and fluorescence yield mode in a field of 7 T gives a Curie–Weiss temperature of ϑCW ≈ –30 K, which suggests antiferromagnetic ordering, in contrast to the paramagnetic behavior observed with SQUID magnetometry. From the anomaly of the XMCD signal at low temperatures, a Néel temperature TN between 10 K and 25 K is estimated. (© 2016 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim)

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Abstract: In spin valve structures the damping of a ferromagnetic layer driven at resonance can be modified by the transfer of spin angular momentum into a ‘sink’ ferromagnetic layer. This effect, known as spin pumping, is interface dominated and expected to increase with increasing sink layer thickness up to a saturation absorption depth, previously reported to be 1.2 nm regardless of the sink layer’s composition [1]. Using vector network analyser ferromagnetic resonance (VNA-FMR), we have studied the variation in damping as a function of sink layer thickness in a series of CoMnGe (5 nm) / Ag (6 nm) / NiFe (x nm) spin valves. These measurements show only small variations in the CoMnGe Gilbert damping parameter for x ≤ 1.8 nm, although damping is observed to increase at x = 0.3 and 0.6 nm. Element-resolved x-ray detected ferromagnetic resonance (XFMR) [2] measurements confirm spin transfer torque due to spin pumping as the origin of the damping for x = 1.5 and 1.8 nm, with both thicknesses having the same effective spin mixing conductance, supporting the findings of Ghosh et al [1]. For thicker sink layers the source and sink FMR fields are seen to coincide, hampering the identification of spin pumping. [1] A Ghosh, et al. Physical Review Letters 109, 127202 (2012) [2] M Marcham, et al. Physical Review B 87, 180403 (2013)

Open Access

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Abstract: Spin transfer in magnetic multilayers offers the possibility of ultrafast, low-power device operation. We report a study of spin pumping in spin valves, demonstrating that a strong anisotropy of spin pumping from the source layer can be induced by an angular dependence of the total Gilbert damping parameter, alpha, in the spin sink layer. Using lab- and synchrotron-based ferromagnetic resonance, we show that an in-plane variation of damping in a crystalline Co50Fe50 layer leads to an anisotropic alpha in a polycrystalline Ni81Fe19 layer. This anisotropy is suppressed above the spin diffusion length in Cr, which is found to be 8 nm, and is independent of static exchange coupling in the spin valve. These results offer a valuable insight into the transmission and absorption of spin currents, and a mechanism by which enhanced spin torques and angular control may be realized for next-generation spintronic devices.

Open Access

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Abstract: Breaking time-reversal symmetry through magnetic doping of topological insulators has been identified as a key strategy for unlocking exotic physical states. Here, we report the growth of Bi2Te3 thin films doped with the highest magnetic moment element Ho. Diffraction studies demonstrate high quality films for up to 21% Ho incorporation. Superconducting quantum interference device magnetometry reveals paramagnetism down to 2K with an effective magnetic moment of 5 muB/Ho. Angle-resolved photoemission spectroscopy shows that the topological surface state remains intact with Ho doping, consistent with the material’s paramagnetic state. The large saturation moment achieved makes these films useful for incorporation into heterostructures, whereby magnetic order can be introduced via interfacial coupling.