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Abstract: Exploiting multiferroic BiFeO3 thin films in spintronic devices requires deterministic and robust control of both internal magnetoelectric coupling in BiFeO3, as well as exchange coupling of its antiferromagnetic order to a ferromagnetic overlayer. Previous reports utilized approaches based on multi-step ferroelectric switching with multiple ferroelectric domains. Because domain walls can be responsible for fatigue, contain localized charges intrinsically or via defects, and present problems for device reproducibility and scaling, an alternative approach using a monodomain magnetoelectric state with single-step switching is desirable. Here we demonstrate room temperature, deterministic and robust, exchange coupling between monodomain BiFeO3 films and Co overlayer that is intrinsic (i.e., not dependent on domain walls). Direct coupling between BiFeO3 antiferromagnetic order and Co magnetization is observed, with ~ 90° in-plane Co moment rotation upon single-step switching that is reproducible for hundreds of cycles. This has important consequences for practical, low power non-volatile magnetoelectric devices utilizing BiFeO3.

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Abstract: Spin pumping has been studied within Ta / Ag / Ni81Fe19 (0–5 nm) / Ag (6 nm) / Co2MnGe (5 nm) / Ag / Ta large-area spin-valve structures, and the transverse spin current absorption of Ni81Fe19 sink layers of different thicknesses has been explored. In some circumstances, the spin current absorption can be inferred from the modification of the Co2MnGe source layer damping in vector network analyzer ferromagnetic resonance (VNAFMR) experiments. However, the spin current absorption is more accurately determined from element-specific phase-resolved x-ray ferromagnetic resonance (XFMR) measurements that directly probe the spin transfer torque (STT) acting on the sink layer at the source layer resonance. Comparison with a macrospin model allows the real part of the effective spin mixing conductance to be extracted. We find that spin current absorption in the outer Ta layers has a significant impact, while sink layers with thicknesses of less than 0.6 nm are found to be discontinuous and super-paramagnetic at room temperature, and lead to a noticeable increase of the source layer damping. For the thickest 5-nm sink layer, increased spin current absorption is found to coincide with a reduction of the zero frequency FMR line width that we attribute to improved interface quality. This study shows that the transverse spin current absorption does not follow a universal dependence upon sink layer thickness but instead the structural quality of the sink layer plays a crucial role.

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Abstract: For over half a century, the technological promise of spins manipulable by a small voltage has captivated the interest of experimental and theoretical researchers alike. However, if thin-film multiferroics are to be incorporated into future data storage devices, a much greater understanding of their behaviour and how they differ from their bulk counterparts is required. In this thesis, we probe the fundamental multiferroic properties of BiFeO3 films through a combination of state-of-the-art diffraction and microscopy techniques. We investigate the coupling between magnetic, ferroelectric, and structural order, with a focus on domains, and how the domain structure may be manipulated in order to tailor the multiferroic properties of the material. Using non-resonant magnetic x-ray scattering (NXMS) and neutron diffraction, we study the magnetic and structural properties of (111)pc-oriented BiFeO3 films. Contrary to the general belief that to they grow as a rhombohedral monodomain, we find that they comprise a sub-micron texture of monoclinic domains. The magnetic structure is found to be intimately coupled to the structure, resulting in the propagation vector being locked to the monoclinic b-axis. This magnetoelastic coupling opens up a route to strain-engineer the magnetic domains via epitaxial strain. By growing BiFeO3 films on a lower-symmetry, TbScO3 substrate, we are able to engineer a magnetic, structural and ferroelectric monodomain, coherent over the entire film, constituting an increase in the domain size by over five orders of magnitude. We directly demonstrate the coupling between ferroelectric and magnetic order parameters of the cycloidal magnetic structure. Using NXMS polarimetry to measure directly the magnetic polarity, we show that upon switching the ferroelectric polarisation, the magnetic polarity switches accordingly---a major rearrangement of the magnetic structure, with each spin rotating by 90 degrees on average. This goes counter to idea that magnetic and ferroelectric order parameters are only weakly coupled in type-I multiferroics. Finally, using photoemission electron microscopy we are able to directly image the sub-micron magnetostructural domain structure. We further show that there is a strong interfacial coupling between the magnetostructural domains of BiFeO3 with a ferromagnetic overlayer. The BiFeO3 domains are found to impose a uniaxial anisotropy in the overlayer, opening up a route to control ferromagnetic domains.

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Abstract: Concepts for information storage and logical processing based on magnetic domain walls have great potential for implementation in future information and communications technologies. To date, the need to apply power hungry magnetic fields or heat dissipating spin polarized currents to manipulate magnetic domain walls has limited the development of such technologies. The possibility of controlling magnetic domain walls using voltages offers an energy efficient route to overcome these limitations. Here we show that a voltage-induced uniaxial strain induces reversible deterministic switching of the chirality of a magnetic vortex wall. We discuss how this functionality will be applicable to schemes for information storage and logical processing, making a significant step towards the practical implementation of magnetic domain walls in energy efficient computing.

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Abstract: The effects of high-temperature annealing on ferromagnetic Co-doped Indium Tin Oxide (ITO) thin films have been investigated using X-ray diffraction (XRD), magnetometry, and X-Ray Magnetic Circular Dichroism (XMCD). Following annealing, the magnetometry results indicate the formation of Co clusters with a significant increase in the saturation magnetization of the thin films arising from defects introduced during cluster formation. However, sum rule analysis of the element-specific XMCD results shows that the magnetic moment at the Co sites is reduced after annealing. The effects of annealing demonstrate that the ferromagnetism observed in the as-deposited Co-doped ITO films arises from intrinsic defects and cannot be related to the segregation of metallic Co clusters.