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Abstract: High-resolution observation of a large field of view with a high quality detector is important for single particle analysis or in-situ experiments. Consequently, evaluation of aberrations that depend on position in the field of view, (off-axial aberrations) is required. We report the experimental measurement of off-axial aberrations including higher order components in several optical conditions together with the corresponding off-axial phase maps.

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Abstract: Hybrid metal extrusion & bonding (HYB) is a joining method that enables solid-state bonding by combining addition of aluminium filler material through continuous extrusion with pressure exerted by a rotating steel tool. This work presents mechanical and microstructural characterisation of a second generation HYB butt joint of aluminium alloy 6082 and structural steel S355. The ultimate tensile strength was measured to be in the range of 184–220 MPa, which corresponds to 60–72% joint efficiency. Digital image correlation analysis of the strain development during tensile testing revealed that root cracks formed, before the final fracture ran close to the aluminium-steel interface. A significant amount of residual aluminium was found on the steel fracture surface, especially in regions that experienced higher pressure during joining. Scanning and transmission electron microscopy revealed that the bond strength could be attributed to a combination of microscale mechanical interlocking and a discontinuous nanoscale interfacial Al-Fe-Si intermetallic phase layer. Analysis of scanning electron diffraction data acquired in a tilt series, indicated that the polycrystalline intermetallic phase layer contained the cubic αc phase. The results give insight into the bonding mechanisms of aluminium-steel joints and into the performance of HYB joints, which may be used to better understand and further develop aluminium-steel joining processes.

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Abstract: Halide perovskite materials have promising performance characteristics for low-cost optoelectronic applications. Photovoltaic devices fabricated from perovskite absorbers have reached power conversion efficiencies above 25 per cent in single-junction devices and 28 per cent in tandem devices. This strong performance (albeit below the practical limits of about 30 per cent and 35 per cent, respectively) is surprising in thin films processed from solution at low-temperature, a method that generally produces abundant crystalline defects. Although point defects often induce only shallow electronic states in the perovskite bandgap that do not affect performance, perovskite devices still have many states deep within the bandgap that trap charge carriers and cause them to recombine non-radiatively. These deep trap states thus induce local variations in photoluminescence and limit the device performance. The origin and distribution of these trap states are unknown, but they have been associated with light-induced halide segregation in mixed-halide perovskite compositions and with local strain, both of which make devices less stable. Here we use photoemission electron microscopy to image the trap distribution in state-of-the-art halide perovskite films. Instead of a relatively uniform distribution within regions of poor photoluminescence efficiency, we observe discrete, nanoscale trap clusters. By correlating microscopy measurements with scanning electron analytical techniques, we find that these trap clusters appear at the interfaces between crystallographically and compositionally distinct entities. Finally, by generating time-resolved photoemission sequences of the photo-excited carrier trapping process, we reveal a hole-trapping character with the kinetics limited by diffusion of holes to the local trap clusters. Our approach shows that managing structure and composition on the nanoscale will be essential for optimal performance of halide perovskite devices.

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Abstract: Monolayer 2D MoS2 grown by chemical vapor deposition is nanopatterned into nanodots, nanorods, and hexagonal nanomesh using block copolymer (BCP) lithography. The detailed atomic structure and nanoscale geometry of the nanopatterned MoS2 show features down to 4 nm with nonfaceted etching profiles defined by the BCP mask. Atomic resolution annular dark field scanning transmission electron microscopy reveals the nanopatterned MoS2 has minimal large-scale crystalline defects and enables the edge density to be measured for each nanoscale pattern geometry. Photoluminescence spectroscopy of nanodots, nanorods, and nanomesh areas shows strain-dependent spectral shifts up to 15 nm, as well as reduction in the PL efficiency as the edge density increases. Raman spectroscopy shows mode stiffening, confirming the release of strain when it is nanopatterned by BCP lithography. These results show that small nanodots (≈19 nm) of MoS2 2D monolayers still exhibit strong direct band gap photoluminescence (PL), but have PL quenching compared to pristine material from the edge states. This information provides important insights into the structure–PL property correlations of sub-20 nm MoS2 structures that have potential in future applications of 2D electronics, optoelectronics, and photonics.