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Abstract: Aluminum is a common dopant across oxide cathodes for improving the bulk and cathode-electrolyte interface (CEI) stability. Aluminum in the bulk is known to enhance structural and thermal stability, yet the exact influence of aluminum at the CEI remains unclear. To address this, we utilized a combination of X-ray photoelectron and absorption spectroscopy to identify aluminum surface environments and extent of transition metal reduction for Ni-rich LiNi0.8Co0.2−yAlyO2 (0%, 5%, or 20% Al) layered oxide cathodes tested at 4.75 V under thermal stress (60 °C). For these tests, we compared the conventional LiPF6 salt with the more thermally stable LiBF4 salt. The CEI layers are inherently different between these two electrolyte salts, particularly for the highest level of Al-doping (20%) where a thicker (thinner) CEI layer is found for LiPF6 (LiBF4). Focusing on the aluminum environment, we reveal the type of surface aluminum species are dependent on the electrolyte salt, as Al-O-F- and Al-F-like species form when using LiPF6 and LiBF4, respectively. In both cases, we find cathode-electrolyte reactions drive the formation of a protective Al-F-like barrier at the CEI in Al-doped oxide cathodes.

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Abstract: Due to their complex chemical structure transition metal oxides display many fascinating properties which conventional semiconductors lack. For this reason transition metal oxides hold a lot of promise for novel electronic functionalities. Just as in conventional semiconductor heterostructures, the interfaces between different materials play a key role in oxide electronics. The textbook example is the (001) interface between the band insulators LaAlO3 and SrTiO3 at which a two-dimensional electron system (2DES) forms. In order to utilize such a 2DES in prospective electronic devices, it is vital that the electronic properties of the interface can be controlled and manipulated at will. Employing photoelectron spectroscopy as well as electronic transport measurements, this thesis examines how such interface engineering can be realized in the case of the LaAlO3/SrTiO3 heterostructure: By photoemission we manage to unambiguously distinguish the different mechanisms by which SrTiO3 can be doped with electrons. An electronic reconstruction is identified as the driving mechanism to render stoichiometric LaAlO3/SrTiO3 interfaces metallic. The doping of the LaAlO3/SrTiO3 heterointerface can furthermore be finely adjusted by changing the oxygen vacancy (VO) concentration in the heterostructure. Combining intense x-ray irradiation with oxygen dosing, we even achieve control over the VO concentration and, consequently, the doping in the photoemission experiment itself. Exploiting this method, we investigate how the band diagram of SrTiO3-based heterostructures changes as a function of the VO concentration and temperature by hard x-ray photoemission spectroscopy. With the band bending in the SrTiO3 substrate changing as a function of the VO concentration, the interfacial band alignment is found to vary as well. The relative permittivity of the SrTiO3 substrate and, in particular, its dependence on temperature and electric field is identified as one of the essential parameters determining the electronic interface properties. That is also why the sample temperature affects the charge carrier distribution. The mobile charge carriers are shown to shift toward the SrTiO3 bulk when the sample temperature is lowered. This effect is, however, only pronounced if the total charge carrier concentration is small. At high charge carrier concentrations the charge carriers are always confined to the interface, independent of the sample temperature. The dependence of the electronic interface properties on the VO concentration is also investigated by a complementary method, viz. by electronic transport measurements. These experiments confirm that the mobile charge carrier concentration increases concomitantly to the VO concentration. The mobility of the charge carriers changes as well depending on the VO concentration. Comparing spectroscopy and transport results, we are able to draw conclusions about the processes limiting the mobility in electronic transport. We furthermore build a memristor device from our LaAlO3/SrTiO3 heterostructures and demonstrate how interface engineering is used in practice in such novel electronic applications. This thesis furthermore investigates how the electronic structure of the 2DES is affected by the interface topology: We show that, akin to the (001) LaAlO3/SrTiO3 heterointerface, an electronic reconstruction also renders the (111) interface between LaAlO3 and SrTiO3 metallic. The change in interface topology becomes evident in the Fermi surface of the buried 2DES which is probed by soft x-ray photoemission. Based on the asymmetry in the Fermi surface, we estimate the extension of the conductive layer in the (111)-oriented LaAlO3/SrTiO3 heterostructure. The spectral function measured furthermore identifies the charge carriers at the interface as large polarons.

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Abstract: Potassium-ion (K-ion) batteries potentially offer numerous advantages over conventional lithium-ion batteries as a result of the high natural abundance of potassium and its lower positive charge density, compared with lithium. This introduces the possibility of using K-ion in fast charging applications, in which cost effectiveness is also a major factor. Unlike for sodium-ion batteries, graphite can be used as an anode in K-ion cells, for which an extensive supply chain, electrode manufacturing infrastructure, and knowledge already exists. However, the performance of graphite anodes in K-ion cells does not meet expectations, with rapid capacity fading and poor first cycle irreversible capacities often reported. Here we investigate the formation and composition of the solid electrolyte interphase (SEI) as well as K+ insertion in graphite anodes in K-ion batteries. Through the use of energy-tuned synchrotron-based X-ray photoelectron spectroscopy, we make a detailed analysis at three probing depths up to ~50 nm of graphite anodes cycled to various potentials on the first discharge-charge cycle. Extensive SEI formation from a KPF6/DEC:EC electrolyte system is found to occur at low potentials during the insertion of potassium into graphite. During the subsequent removal of potassium from the structure, the thick SEI is partially stripped from the electrode, demonstrating that the SEI layer is unstable and contributes to a significant proportion of the capacity on both discharge and charge. With this in mind, further work is required to develop an electrolyte system with stable SEI layer formation on graphite in order to advance K-ion battery technology.

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Abstract: Interfaces between polycyclic π-electron systems and metals play prominent roles in organic or graphene-based (opto)electronic devices, in which performance-related parameters depend critically on the properties of metal/semiconductor contacts. Here, we explore how the topology of the π-electron system influences the bonding and the electronic properties of the interface. We use azulene as a model for nonalternant pentagon-heptagon (5-7) ring pairs and compare it to its isomer naphthalene, which represents the alternant 6-6 ring pair. Their coverage-dependent interaction with Ag(111) and Cu(111) surfaces was studied with the normal-incidence X-ray standing wave (NIXSW) technique, near-edge X-ray absorption fine structure (NEXAFS) spectroscopy, UV and X-ray photoelectron spectroscopy (UPS, XPS), and density functional theory (DFT). Coverage-dependent adsorption heights and spectroscopic data reveal that azulene forms shorter interfacial bonds than naphthalene and engages in stronger electronic interactions with both surfaces. These differences are more pronounced on Cu. Increasing coverages lead to larger adsorption heights, indicating bond weakening by intermolecular repulsion. The extensive DFT calculations include dispersive interactions using: (1) the DFT-D3 scheme, (2) the vdWsurf correction based on DFT-TS, (3) a Many-Body Dispersion (MBD) correction scheme, and (4) the D3surf scheme. All methods predict the adsorption heights reasonably well with an average error below 0.1 Å. The stronger bond of azulene is attributed to its nonalternant topology, which results in a reduced HOMO-LUMO gap and brings the LUMO energetically close to the Fermi energy of the metal, causing stronger hybridization with electronic states of the metal surfaces.

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Abstract: n this work an alternate pathway is demonstrated to form ultrathin cobalt ferrite ( Co x Fe 3 − x O 4 ) films by interdiffusion of Fe 3 O 4 /CoO bilayers. Bilayer samples with different Fe 3 O 4 /CoO thickness ratios have been prepared by reactive molecular beam epitaxy on Nb-doped SrTiO 3 (001) substrates to obtain cobalt ferrite films of varied stoichiometry. Subsequently, oxygen-assisted postdeposition annealing experiments for consecutive temperature steps between 300 ∘ C and 600 ∘ C have been conducted monitoring the interdiffusion process by means of high-resolution x-ray reflectivity, soft and angle-resolved hard x-ray photoelectron, and x-ray absorption spectroscopy. Magnetic properties were characterized using superconducting quantum interference device magnetometry. The interdiffusion process starts from 300 ∘ C annealing temperature and is completed for temperatures above 500 ∘ C . For completely interdiffused films with Co:Fe ratios larger than 0.84:2 a thin segregated CoO layer on top of the ferrite is formed. This CoO segregation is attributed to surface and interface effects. In addition, multiplet calculations of x-ray absorption spectra are performed to determine the occupancy of different sublattices. These results are correlated with the magnetic properties of the ferrite films. A stoichiometric CoFe 2 O 4 film with partial inversion has been formed exhibiting homogeneously distributed Co 2 + and mainly Fe 3 + valence states if the initial Co:Fe content is 1.09:2. Thus, for the formation of stoichiometric cobalt ferrite by the proposed postdeposition annealing technique an initial Co excess has to be provided as the formation of a top CoO layer is inevitable.