I09-Surface and Interface Structural Analysis
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Isabel
Huck
,
Niels
Kubitza
,
Tom
Keil
,
Marius
Schlapp
,
Robert
Winkler
,
Prajna
Bhatt
,
Christoph
Schlueter
,
Pardeep K.
Thakur
,
Tien-Lin
Lee
,
Paweł P.
Michałowski
,
Leopoldo
Molina-Luna
,
Anna
Regoutz
,
Christina S.
Birkel
Diamond Proposal Number(s):
[36180]
Abstract: MAX phases are an extremely versatile family of layered compounds that usually consist of an early to-mid transition metal (M-element), a main group element (mainly groups 13–15) or late transition metal (A-element) and carbon and/or nitrogen (X-element). It is therefore not too surprising that in addition to the roughly 70 compounds with 211 stoichiometry, there exist many solid solutions with mixed elements on the M- and A-site, respectively. Much less common are solid solution phases with mixed elements on both M- and A-site simultaneously (double-site solid solutions), as well as solid solutions on the X-site (carbonitride MAX phases). Challenging these restrictions in the chemical composition space, we present here for the first time (V0.2Cr0.8)2(Ga0.5Ge0.5)(C0.6N0.4) as a new carbonitride member of the MAX phase family, containing solid solutions on all three lattice sites simultaneously. This triple-site solid solution MAX phase is synthesized by high-temperature solid-state methods, and we demonstrate that it is possible to use two different nitrogen-containing precursors (VN and Cr2N), respectively. Structure, morphology and chemical composition are characterized by X-ray powder diffraction (XRD), electron microscopy (SEM/TEM), secondary ion mass spectrometry (SIMS), and X-ray photoelectron spectroscopy (HAXPES).
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Feb 2026
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I09-Surface and Interface Structural Analysis
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Arya
Loloee
,
Manuel
Scharrer
,
Tullio S.
Geraci
,
Hui-Fei
Zhai
,
Matt S.
Flores
,
Prajna
Bhatt
,
Aysha A.
Riaz
,
Pardeep K.
Thakur
,
Tien-Lin
Lee
,
Anna
Regoutz
,
Jakoah
Brgoch
,
Jason F.
Khoury
,
Alexandra
Navrotsky
,
Christina S.
Birkel
Diamond Proposal Number(s):
[34325]
Abstract: MAX phases are a class of compounds known for having both metallic and ceramic properties, such as good electrical conductivity, oxidation resistance, and high hardness. The bulk of the research on their properties focuses on those with titanium at the M-site and metals from groups 13 to 15, e.g., aluminum, at the A-site. Here, we expand the properties repertoire with new arsenic-containing A-site solid solutions, V2(As1–xPx)C and V2(As1–xGex)C. The structure and elemental composition of the solid solutions were resolved with powder X-ray diffraction, scanning electron microscopy with energy-dispersive X-ray spectroscopy, and hard X-ray photoelectron spectroscopy. The electrical resistivity measurements show that both full series are metallic with the parent phases being the most conductive. Thermal analyses show V2GeC is the most oxidation resistant and V2AsC is the least, while substitutions decrease thermal stability, as oxidation resistance of the intermediate compositions shifts toward that of V2AsC. The V2(As1–xGex)C series shows little variation in hardness across compositions, while the incorporation of phosphorus noticeably increases hardness.
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Jan 2026
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I09-Surface and Interface Structural Analysis
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Ziwei J.
Yang
,
Zhuangnan
Li
,
Leyi
Loh
,
James
Moloney
,
John
Walmsley
,
Jiahang
Li
,
Yuan
Chen
,
Lixin
Liu
,
Han
Zang
,
Han
Yan
,
Soumya
Sarkar
,
Jason
Day
,
Yan
Wang
,
Manish
Chhowalla
Diamond Proposal Number(s):
[36790, 39914]
Open Access
Abstract: Metallic, two-dimensional molybdenum disulfide (MoS2) nanosheets show promise for energy storage and catalysis applications. However, current chemical exfoliation methods require more than 48 h to produce milligrams of material, and result in an impure mixture of metallic (1T/1T′, approximately 50%–70%) and semiconducting (2H) phases. Here we demonstrate large-scale and rapid (>600 g h−1) production of nearly pure-phase metallic two-dimensional MoS2 nanosheets using microwave irradiation. Atomic-resolution imaging and X-ray photoelectron spectroscopy show nearly 100% metallic phase in the basal plane. This high purity leads to a large exchange current density (0.175 ± 0.030 mA cm−2) and low Tafel slopes (39–47 mV dec−1) for hydrogen evolution reaction. In supercapacitors and lithium–sulfur pouch-cell batteries, the resulting nanosheets enable a high volumetric capacitance of 753.0 ± 3.6 F cm−3 and a specific capacity of 1,245 ± 16 mAh g−1 (electrolyte-to-sulfur ratio, 2 µl mg−1), respectively. Our method provides a practical pathway for producing high-quality metallic two-dimensional materials for high-performance energy devices.
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Jan 2026
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I09-Surface and Interface Structural Analysis
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Yue
Yu
,
Xu
Zhang
,
Wenjing
Xu
,
Rongkun
Chen
,
Cien
Liu
,
Yiru
Zhao
,
Yushuo
Hu
,
Zhilai
Fang
,
Ning
Jia
,
Xiangyu
Xu
,
Kelvin H. L.
Zhang
Diamond Proposal Number(s):
[37428]
Abstract: GaN-based deep ultraviolet (DUV) optoelectronic devices have garnered considerable attention for applications in sterilization, biological detection, and optical communications. However, the performance of current DUV optoelectronic devices is limited by the insufficient DUV transparency of conventional electrodes. In this work, the epitaxial growth of degenerately Si-doped Ga2O3 films on GaN as a promising DUV transparent electrode is reported. The 0.5% Si doped Ga2O3 (n+-Ga2O3) films exhibit DUV transparency exceeding 85% in the spectral range from 280 to 400 nm wavelength. Such a high DUV transparency is attributed to the ultrawide bandgap of ≈5.0 eV of the n+-Ga2O3 film induced by the Burstein–Moss effect due to degenerate doping. Moreover, the n+-Ga2O3 film exhibits a very low specific contact resistance of 1.96 × 10−4 Ω cm2 to GaN. High-resolution X-ray photoemission spectroscopic (XPS) study reveals that n+-Ga2O3 forms a type-II staggered band alignment with GaN with a low interface barrier of 0.15 eV and a narrow band bending thickness of a few nm. The small barrier, together with the degenerately doped Ga2O3 film, enables excellent electrical contact at the n+-Ga2O3/GaN interface and low contact resistance. This work demonstrates n+-Ga2O3 as a promising alternative for DUV transparent electrode for GaN-based DUV devices.
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Jan 2026
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I09-Surface and Interface Structural Analysis
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Prajwal M.
Laxmeesha
,
Rajesh
Dutta
,
Rajeev Kumar
Rai
,
Sharup
Sheikh
,
Michael F.
Discala
,
Uditha M.
Jayathilake
,
Alexander
Velič
,
Tarush
Tandon
,
Tessa D.
Tucker
,
Christoph
Klewe
,
Haile
Ambaye
,
Timothy
Charlton
,
Tien-Lin
Lee
,
Eric A.
Stach
,
Kemp W.
Plumb
,
Alexander X.
Gray
,
Steven J.
May
Diamond Proposal Number(s):
[40454]
Abstract: Kagome metals are an intriguing class of quantum materials as the presence of both flat bands and Dirac points provides access to functional properties present in strongly correlated and topological materials. To fully harness these electronic features, the ability to tune the Fermi level relative to the band positions is needed. Here, we explore the structural, electronic, and magnetic impacts of substitutional alloying within ferromagnetic kagome metal Fe3Sn2 in thin films grown by molecular beam epitaxy. Transition metals, Mn and Co, are chosen as substitutes for Fe to reduce or increase the d-band electron count, thereby moving the Fermi level accordingly. We find that Co is not incorporated into the Fe3Sn2 structure but instead results in a two-phase Fe–Co and (Fe,Co)Sn composite. In contrast, Fe3−xMnxSn2 films are realized with x of up to 1.0, retaining crystalline quality comparable with the parent phase. The incorporation of Mn repositions the flat bands relative to the Fermi level in a manner consistent with hole-doping, as revealed by hard x-ray photoemission and density functional theory. The Fe3−xMnxSn2 films retain room temperature ferromagnetism, with x-ray magnetic circular dichroism measurements confirming that the Fe and Mn moments are ferromagnetically aligned. The ability to hole-dope this magnetic kagome metal provides a platform for tuning properties, such as anomalous Hall and Nernst responses.
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Jan 2026
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B18-Core EXAFS
E01-JEM ARM 200CF
I09-Surface and Interface Structural Analysis
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Thomas J.
Liddy
,
Benjamin J.
Young
,
Emerson C.
Kohlrausch
,
Andreas
Weilhard
,
Gazi N.
Aliev
,
Yifan
Chen
,
Manfred E.
Schuster
,
Mohsen
Danaie
,
Luke L.
Keenan
,
Donato
Decarolis
,
Diego
Gianolio
,
Siqi
Wang
,
Mingming
Zhu
,
Graham J.
Hutchings
,
David M.
Grant
,
Wolfgang
Theis
,
Tien-Lin
Lee
,
David A.
Duncan
,
Alberto
Roldan
,
Andrei N.
Khlobystov
,
Jesum
Alves Fernandes
Diamond Proposal Number(s):
[38764]
Open Access
Abstract: Ammonia is an attractive hydrogen carrier, yet its practical use is limited by the need for efficient catalytic decomposition. We demonstrate that in-situ N-doping of Ru nanoparticles and graphitized carbon nanofiber supports during reaction produces a sharp increase in hydrogen production during the first 40 h, followed by stable activity. Spectroscopic and microscopic analyses, together with density functional theory simulations, reveal that Ru nitridation is rapid and support-independent, resulting in a mechanistic shift from the traditional Langmuir–Hinshelwood to a Mars–van Krevelen pathway, further confirmed by isotopic labelling experiments. In contrast, the progressive nitridation of the carbon support, observed via X-ray photoelectron spectroscopy, modulates the electronic environment of Ru and functions as a dynamic nitrogen reservoir that enables reversible N atoms exchange with the Ru particles, facilitating N desorption from the Ru surface and thereby governing the catalytic activity enhancement. These new findings provide new mechanistic insight into ammonia decomposition and establish progressive nitrogen doping of carbon supports as a strategy for designing efficient metal-based catalysts for hydrogen production.
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Dec 2025
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I09-Surface and Interface Structural Analysis
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Abstract: Superconducting microwave circuits are a promising physical implementation of quantum computing. A significant challenge with the development of superconducting qubits is the materials source of loss leading to qubit decoherence. Much of this loss is dielectric loss or quasiparticle dissipation at superconductor surfaces and interfaces. In order to understand the loss mechanisms microscopically, it is necessary to have an accurate picture of the atomic structure and microstructure. In this work, we explore the structure of three interfaces. First, we present non- destructive X-ray characterization of the NbH surface precipitation in Nb thin films. Unwanted hydride precipitation in niobium-based superconducting circuits is a side effect of hydrofluoric acid etching of the Nb surface oxide. The precipitate microstructure is challenging to probe because of the high mobility of hydrogen in niobium. Using X-rays diffraction, we show evidence supporting phase-field simulations that the nucleation of NbH occurs at free surfaces. Using darkfield X-ray nanoprobe microscopy, we identify a complex microstructure suggesting a martensitic nucleation that transitions to a dendritic growth. Next, we present X-ray standing wave excited X-ray photoelectron spectroscopy of the annealed, Nb(110) ordered oxide surface layer. We discover the existence of an oxygen interstitial rich subsurface layer and identify the origin of two distinct oxygen chemical states at the surface: one coming from this subsurface layer, and the other from the surface NbO termination. Last, we present the heteroepitaxy of single crystal Al2O3 with a TiN. We identify TiN as an ideal substrate for the epitaxial growth of Al2O3 in a capacitor geometry based on the high degree of crystallinity and sharp interfaces with minimal diffusion and
3
we measure the two-level-state loss of the Al2O3 junction dielectric layer. We present this interface as an alternative to the commonly used amorphous alumina in Josephson Junctions.
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Dec 2025
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I09-Surface and Interface Structural Analysis
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G.
Cicconi
,
M.
Bosi
,
F.
Mezzadri
,
A.
Ugolotti
,
I.
Cora
,
L.
Seravalli
,
H.
Tornatzky
,
J.
Lähnemann
,
M. R.
Wagner
,
P.
Bhatt
,
P. K.
Thakur
,
T.-L.
Lee
,
A.
Regoutz
,
A.
Baraldi
,
D.
Bersani
,
L.
Cademartiri
,
A.
Parisini
,
B.
Pécz
,
L.
Miglio
,
R.
Fornari
,
P.
Mazzolini
Diamond Proposal Number(s):
[36180]
Open Access
Abstract: The ultra-wide bandgap semiconductor rutile germanium oxide (r-GeO2, Eg ≈ 4.6 eV) is gaining momentum in the quest for novel materials for power electronics. In this work, we experimentally and theoretically investigate the physical mechanisms behind the nucleation and growth of epitaxial (001) r-GeO2 on isostructural r-TiO2 substrates via metalorganic vapor phase epitaxy (MOVPE) using isobutylgermane and O2 precursors. In the identified deposition window, the thin film growth seems to be affected by partial GeO suboxide desorption, and we observe that the layers are always composed of r-GeO2 islands embedded and/or surrounded by amorphous material. Ge/Ti interdiffusion at the epilayer-substrate interface is found at the base of each r-GeO2 island; combining experimental analysis and multiscale theoretical simulations we discuss how such a process is fundamental to achieve partial strain mitigation allowing for the nucleation of epitaxial r-GeO2 and suggest in this regard a limiting threshold to avoid the formation of amorphous material. Moreover, we shed light on the formation of different facets in r-GeO2 at early stages of growth and after merging of islands.
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Dec 2025
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B18-Core EXAFS
I09-Surface and Interface Structural Analysis
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Abstract: Hydrogen shows promise as the energy vector of the future, but problems with storage and transport are significant. Storage of hydrogen as ammonia has the potential to solve these problems, but current catalysts for its cracking are not efficient enough to enable the large-scale application of ammonia. Carbon materials, such as carbon nanotubes (CNTs), have shown potential as supports for ammonia decomposition catalysts. This thesis investigates the use of graphitised nanofibers (GNFs), which offer high purity and graphitisation, as a support material for Ru catalysts. Ru/GNF was synthesised using magnetron sputtering and tested for catalytic activity in ammonia decomposition and the catalyst exhibited self-improvement over the course of the reaction. The evolution of the Ru nanoclusters on GNF was studied by Identical Location Scanning Transmission Electron Microscopy (IL-STEM). The analysis revealed that the Ru nanoclusters undergo significant morphological changes during the reaction - transforming from flat and amorphous structures to more three-dimensional crystalline nanoclusters. The step-edges on the GNF surface help to stabilise the Ru nanoclusters, preventing excessive growth and maintaining a high density of active sites. Spectroscopic analysis using in-operando EXAFS and ex-situ XPS provide further insights into the mechanism behind the self-improvement. EXAFS data suggest that the Ru nanoparticles undergo bulk nitridation during the reaction. This is supported by XPS analysis, which confirms the formation of a metal nitride species. It is proposed that the formation of bulk nitrided Ru nanoclusters leads to a change in the reaction mechanism, increasing the number of active sites and enhancing the catalyst’s activity. This thesis highlights the importance of studying the dynamic behaviour of catalysts and provides an understanding of the self-improvement mechanism in Ru/GNF. This knowledge can contribute to the design of more efficient and stable catalysts for low-temperature ammonia cracking, advancing sustainable hydrogen production technologies.
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Dec 2025
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I09-Surface and Interface Structural Analysis
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H. J.
Elmers
,
O.
Tkach
,
Y.
Lytvynenko
,
H.
Agarwal
,
D.
Biswas
,
J.
Liu
,
A.-A.
Haghighirad
,
M.
Merz
,
S.
Pakhira
,
G.
Garbarino
,
T.-L.
Lee
,
J.
Demsar
,
G.
Schönhense
,
M.
Le Tacon
,
O.
Fedchenko
Diamond Proposal Number(s):
[37580]
Abstract: This study uses angle-resolved photoemission spectroscopy to examine the low-temperature electronic structure of Cs(V0.95Nb0.05)3Sb5, demonstrating that partially substituting V atoms with isoelectronic Nb atoms results in an increase of the bandwidth and enhanced gap opening at the Dirac-like crossings due to the resulting chemical pressure. This increases the magnetic circular dichroism signal in the angular distribution compared to CsV3Sb5, enabling detailed analysis of magnetic circular dichroism in several bands near the Fermi level. These results substantiate the predicted coupling of orbital magnetic moments to three van Hove singularities near the Fermi level at 𝑀 points. Previous studies have observed that Nb doping lowers the charge density transition temperature and increases the critical temperature for superconductivity. This article demonstrates that Nb doping concomitantly increases the magnetic circular dichroism signal attributed to orbital moments.
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Dec 2025
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