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Abstract: Amorphous tin-gallium oxide (a-SGO) grown with atomic layer deposition was evaluated as a buffer layer in (Ag,Cu)(In,Ga)Se2 thin-film solar cells in search for a new material that is compatible with a variety of absorber band gaps. Hard and soft X-ray photoelectron spectroscopy on absorber/a-SGO stacks combined with J–V characterization of solar cells that were fabricated, showed that the conduction band alignment at the absorber/a-SGO interface can be tuned by varying the cation composition and/or growth temperature. Here, the surface band gap was 1.1 eV for the absorber. However, optical band gap data for a-SGO indicate that a suitable conduction band alignment can most likely be achieved even for wider absorber band gaps relevant for tandem top cells. A best efficiency of 17.0% was achieved for (Ag,Cu)(In,Ga)Se2/a-SGO devices, compared to η = 18.6% for the best corresponding CdS reference. Lower fill factor and open-circuit voltage values were responsible for lower cell efficiencies. The reduced fill factor is explained by a larger series resistance, seemingly related to interface properties, which are yet to be optimized. Some layer constellations resulted in degradation in fill factor during light soaking as well. This may partly be explained by light-induced changes in the electrical properties of a-SGO, according to analysis of Al/SGO/n-Si metal-oxide-semiconductor capacitors that were fabricated and characterized with J–V and C–V. Moreover, the introduction of a 1 nm thick Ga2O3 interlayer between the absorber and a-SGO improved the open-circuit voltage, which further indicates that the absorber/a-SGO interface can be improved.

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Abstract: The coupling of nickel‐rich LiNi0.8Mn0.1Co0.1O2 (NMC811) cathodes with high‐capacity silicon–graphite (Si–Gr) anodes is one promising route to further increase the energy density of lithium‐ion batteries. Practically, however, the cycle life of such cells is seriously hindered due to continuous electrolyte degradation on the surfaces of both electrodes. In this study, tris(trimethylsilyl) phosphite (TMSPi) is introduced as an electrolyte additive to improve the electrochemical performance of the NMC811/Si–Gr full cells through formation of protective surface layers at the electrode/electrolyte interfaces. This is thought to prevent the surface fluorination of the active materials and enhance interfacial stability. Notably, TMSPi is shown to significantly reduce the overpotential and operando X‐ray diffraction (XRD) confirms that an irreversible “two‐phase” transition reaction caused by the formed adventitious Li2CO3 layer on the surface of NMC811 can transfer to a solid‐solution reaction mechanism with TMSPi‐added electrolyte. Moreover, influences of TMSPi on the cathode electrolyte interphase (CEI) on the NMC811 and solid electrolyte interphase (SEI) on the Si–Gr are systematically investigated by electron microscopy and synchrotron‐based X‐ray photoelectron spectroscopy which allows for the nondestructive depth‐profiling analysis of chemical compositions and oxidation states close to the electrode surfaces.

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Abstract: Recent reports have identified new metaphases of VO 2 with strain and/or doping, suggesting the structural phase transition and the metal-to-insulator transition might be decoupled. Using epitaxially strained VO 2 / Ti O 2 (001) thin films, which display a bulklike abrupt metal-to-insulator transition and rutile to monoclinic transition structural phase transition, we employ x-ray standing waves combined with hard x-ray photoelectron spectroscopy to simultaneously measure the structural and electronic transitions. This x-ray standing waves study elegantly demonstrates the structural and electronic transitions occur concurrently within experimental limits (±1K).

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Abstract: Promising theoretical capacities and high voltages are offered by Li-rich disordered rocksalt oxyfluoride materials as cathodes in lithium ion batteries. However, as has been discovered for many other Li-rich materials, the oxyfluorides suffer from extensive surface degradation, leading to severe capacity fading. In the case of Li2VO2F, we have previously determined this to be a result of detrimental reactions between an unstable surface layer and the organic electrolyte. Herein, we present the protection of Li2VO2F particles with AlF3 surface modification, resulting in a much enhanced capacity retention over 50 cycles. While the specific capacity for the untreated material drops below 100 mA h g-1 after only 50 cycles, the treated materials retain almost 200 mA h g-1. Photoelectron spectroscopy depth profiling confirms the stabilisation of the active material surface by the surface modification and reveals its suppression of electrolyte decomposition.

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Abstract: SiC is set to enable a new era in power electronics impacting a wide range of energy technologies, from electric vehicles to renewable energy. Its physical characteristics outperform silicon in many aspects, including band gap, breakdown field, and thermal conductivity. The main challenge for further development of SiC-based power semiconductor devices is the quality of the interface between SiC and its native dielectric SiO2. High temperature nitridation processes can improve the interface quality and ultimately the device performance immensely, but the underlying chemical processes are still poorly understood. Here, we present an energy-dependent hard X-ray photoelectron spectroscopy (HAXPES) study probing non-destructively SiC and SiO2 and their interface in device stacks treated in varying atmospheres. We successfully combine laboratory- and synchrotron-based HAXPES to provide unique insights into the chemistry of interface defects and their passivation through nitridation processes.