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Abstract: Theoretical formulations capable of modeling chemical interactions over 3–4 orders of magnitude of bond strength, from covalent to van der Waals (vdW) forces, are one of the primary goals in materials physics, and chemistry. Development of vdW corrections for density-functional theory has thus been a major research field for two decades. While many of these corrections are semiempirical, more theoretically rigorous ab initio functionals have been developed. The ab initio functional vdW-DF2, when coupled with the reoptimized B86 exchange function (vdW-DF2-rB86), has typically performed as well, if not better than most semiempirical formulations. Here we present a system, Co intercalation of graphene on Ir(111), for which a semiempirical correction predicts local corrugation maxima in locations at which the vdW-DF2-rB86 functional predicts global minima. Sub-angstrom precision quantitative structural measurements show better agreement with the semiempirical correction. We posit that it is balancing the weak vdW interaction with the stronger, even covalent, interactions that proves a challenge for the vdW-DF2-rB86 functional.

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Abstract: Due to their complex chemical structure transition metal oxides display many fascinating properties which conventional semiconductors lack. For this reason transition metal oxides hold a lot of promise for novel electronic functionalities. Just as in conventional semiconductor heterostructures, the interfaces between different materials play a key role in oxide electronics. The textbook example is the (001) interface between the band insulators LaAlO3 and SrTiO3 at which a two-dimensional electron system (2DES) forms. In order to utilize such a 2DES in prospective electronic devices, it is vital that the electronic properties of the interface can be controlled and manipulated at will. Employing photoelectron spectroscopy as well as electronic transport measurements, this thesis examines how such interface engineering can be realized in the case of the LaAlO3/SrTiO3 heterostructure: By photoemission we manage to unambiguously distinguish the different mechanisms by which SrTiO3 can be doped with electrons. An electronic reconstruction is identified as the driving mechanism to render stoichiometric LaAlO3/SrTiO3 interfaces metallic. The doping of the LaAlO3/SrTiO3 heterointerface can furthermore be finely adjusted by changing the oxygen vacancy (VO) concentration in the heterostructure. Combining intense x-ray irradiation with oxygen dosing, we even achieve control over the VO concentration and, consequently, the doping in the photoemission experiment itself. Exploiting this method, we investigate how the band diagram of SrTiO3-based heterostructures changes as a function of the VO concentration and temperature by hard x-ray photoemission spectroscopy. With the band bending in the SrTiO3 substrate changing as a function of the VO concentration, the interfacial band alignment is found to vary as well. The relative permittivity of the SrTiO3 substrate and, in particular, its dependence on temperature and electric field is identified as one of the essential parameters determining the electronic interface properties. That is also why the sample temperature affects the charge carrier distribution. The mobile charge carriers are shown to shift toward the SrTiO3 bulk when the sample temperature is lowered. This effect is, however, only pronounced if the total charge carrier concentration is small. At high charge carrier concentrations the charge carriers are always confined to the interface, independent of the sample temperature. The dependence of the electronic interface properties on the VO concentration is also investigated by a complementary method, viz. by electronic transport measurements. These experiments confirm that the mobile charge carrier concentration increases concomitantly to the VO concentration. The mobility of the charge carriers changes as well depending on the VO concentration. Comparing spectroscopy and transport results, we are able to draw conclusions about the processes limiting the mobility in electronic transport. We furthermore build a memristor device from our LaAlO3/SrTiO3 heterostructures and demonstrate how interface engineering is used in practice in such novel electronic applications. This thesis furthermore investigates how the electronic structure of the 2DES is affected by the interface topology: We show that, akin to the (001) LaAlO3/SrTiO3 heterointerface, an electronic reconstruction also renders the (111) interface between LaAlO3 and SrTiO3 metallic. The change in interface topology becomes evident in the Fermi surface of the buried 2DES which is probed by soft x-ray photoemission. Based on the asymmetry in the Fermi surface, we estimate the extension of the conductive layer in the (111)-oriented LaAlO3/SrTiO3 heterostructure. The spectral function measured furthermore identifies the charge carriers at the interface as large polarons.

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Abstract: Separating electrons from their source atoms in La-doped BaSnO3, the first perovskite oxide semiconductor to be discovered with high room-temperature electron mobility, remains a subject of great interest for achieving high-mobility electron gas in two dimensions. So far, the vast majority of work in perovskite oxides has focused on heterostructures involving SrTiO3 as an active layer. Here we report the demonstration of modulation doping in BaSnO3 as high room temperature mobility host without the use of SrTiO3. Significantly, we show the use of angle- resolved hard X-ray photoelectron spectroscopy (HAXPES) as a non-destructive approach to not only determine the location of electrons at the buried interface but also to quantify the width of electron distribution in BaSnO3. The transport results are in good agreement with the results of self-consistent solution to one-dimensional Poisson and Schrödinger equations. Finally, we discuss viable routes to engineer two-dimensional electron gas density through band-offset engineering.

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Abstract: Interfaces between polycyclic π-electron systems and metals play prominent roles in organic or graphene-based (opto)electronic devices, in which performance-related parameters depend critically on the properties of metal/semiconductor contacts. Here, we explore how the topology of the π-electron system influences the bonding and the electronic properties of the interface. We use azulene as a model for nonalternant pentagon-heptagon (5-7) ring pairs and compare it to its isomer naphthalene, which represents the alternant 6-6 ring pair. Their coverage-dependent interaction with Ag(111) and Cu(111) surfaces was studied with the normal-incidence X-ray standing wave (NIXSW) technique, near-edge X-ray absorption fine structure (NEXAFS) spectroscopy, UV and X-ray photoelectron spectroscopy (UPS, XPS), and density functional theory (DFT). Coverage-dependent adsorption heights and spectroscopic data reveal that azulene forms shorter interfacial bonds than naphthalene and engages in stronger electronic interactions with both surfaces. These differences are more pronounced on Cu. Increasing coverages lead to larger adsorption heights, indicating bond weakening by intermolecular repulsion. The extensive DFT calculations include dispersive interactions using: (1) the DFT-D3 scheme, (2) the vdWsurf correction based on DFT-TS, (3) a Many-Body Dispersion (MBD) correction scheme, and (4) the D3surf scheme. All methods predict the adsorption heights reasonably well with an average error below 0.1 Å. The stronger bond of azulene is attributed to its nonalternant topology, which results in a reduced HOMO-LUMO gap and brings the LUMO energetically close to the Fermi energy of the metal, causing stronger hybridization with electronic states of the metal surfaces.

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Abstract: n this work an alternate pathway is demonstrated to form ultrathin cobalt ferrite ( Co x Fe 3 − x O 4 ) films by interdiffusion of Fe 3 O 4 /CoO bilayers. Bilayer samples with different Fe 3 O 4 /CoO thickness ratios have been prepared by reactive molecular beam epitaxy on Nb-doped SrTiO 3 (001) substrates to obtain cobalt ferrite films of varied stoichiometry. Subsequently, oxygen-assisted postdeposition annealing experiments for consecutive temperature steps between 300 ∘ C and 600 ∘ C have been conducted monitoring the interdiffusion process by means of high-resolution x-ray reflectivity, soft and angle-resolved hard x-ray photoelectron, and x-ray absorption spectroscopy. Magnetic properties were characterized using superconducting quantum interference device magnetometry. The interdiffusion process starts from 300 ∘ C annealing temperature and is completed for temperatures above 500 ∘ C . For completely interdiffused films with Co:Fe ratios larger than 0.84:2 a thin segregated CoO layer on top of the ferrite is formed. This CoO segregation is attributed to surface and interface effects. In addition, multiplet calculations of x-ray absorption spectra are performed to determine the occupancy of different sublattices. These results are correlated with the magnetic properties of the ferrite films. A stoichiometric CoFe 2 O 4 film with partial inversion has been formed exhibiting homogeneously distributed Co 2 + and mainly Fe 3 + valence states if the initial Co:Fe content is 1.09:2. Thus, for the formation of stoichiometric cobalt ferrite by the proposed postdeposition annealing technique an initial Co excess has to be provided as the formation of a top CoO layer is inevitable.