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Abstract: A combined high resolution X-ray photoelectron spectroscopy and X-ray standing wave study into the adsorption structure of hydrogenated graphene on Ir(111) is presented. By exploiting the unique absorption profiles and significant modulations in signal intensity found within the X-ray standing wave results, we refine the fitting of the C 1s X-ray photoelectron spectra, allowing us to disentangle the contributions from hydrogenation of graphene in different high-symmetry regions of the moiré supercell. We clearly demonstrate that hydrogenation in the FCC regions results in the formation of a graphane-like structure, giving a standalone component that is separated from the component assigned to the similar structure in the HCP regions. The contribution from dimer structures in the ATOP regions is found to be minor or negligible. This is in contrast to the previous findings where a dimer structure was assumed to contribute significantly to the sp3 part of the C 1s spectra. The corrugation of the remaining pristine parts of the H-graphene is shown to increase with the H coverage, reflecting an increasing number and size of pinning centers of the graphene to the Ir(111) substrate with increasing H exposure.

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Abstract: Germanium selenide (GeSe) bulk crystals, thin films and solar cells are investigated with a focus on acceptor-doping with silver (Ag) and the use of an Sb2Se3 interfacial layer. The Ag-doping of GeSe occurred by a stoichiometric melt growth technique that created Ag-doped GeSe bulk crystals. A combination of capacitance voltage measurements, synchrotron radiation photoemission spectroscopy and surface space-charge calculations indicate Ag-doping increases the hole density from 5.2×1015 cm-3 to 1.9×1016 cm-3. The melt-grown material is used as the source for thermally evaporated GeSe films within solar cells. The cell structure with the highest efficiency of 0.260% is FTO/CdS/Sb2Se3/undoped-GeSe/Au compared with solar cells without the Sb2Se3 interfacial layer or with the Ag-doped GeSe.

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Abstract: Deep UV transparent thin films have recently attracted considerable attention owing to their potential in UV and organic-based optoelectronics. Here, we report the achievement of a deep UV transparent and highly conductive thin film based on Si-doped Ga2O3 (SGO) with high conductivity of 2500 S/cm. The SGO thin films exhibit high transparency over a wide spectrum ranging from visible light to deep UV wavelength and, meanwhile, have a very low work-function of approximately 3.2 eV. A combination of photoemission spectroscopy and theoretical studies reveals that the delocalized conduction band derived from Ga 4s orbitals is responsible for the Ga2O3 films’ high conductivity. Furthermore, Si is shown to act as an efficient shallow donor, yielding high mobility up to approximately 60 cm2/Vs. The superior optoelectronic properties of SGO films make it a promising material for use as electrodes in high-power electronics and deep UV and organic-based optoelectronic devices.

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Abstract: Ni-rich lithium nickel manganese cobalt (NMC) oxide cathode materials promise Li-ion batteries with increased energy density and lower cost. However, higher Ni content is accompanied by accelerated degradation and thus poor cycle lifetime, with the underlying mechanisms and their relative contributions still poorly understood. Here, we combine electrochemical analysis with surface-sensitive X-ray photoelectron and absorption spectroscopies to observe the interfacial degradation occurring in LiNi0.8Mn0.1Co0.1O2–graphite full cells over hundreds of cycles between fixed cell voltages (2.5–4.2 V). Capacity losses during the first ∼200 cycles are primarily attributable to a loss of active lithium through electrolyte reduction on the graphite anode, seen as thickening of the solid-electrolyte interphase (SEI). As a result, the cathode reaches ever-higher potentials at the end of charge, and with further cycling, a regime is entered where losses in accessible NMC capacity begin to limit cycle life. This is accompanied by accelerated transition-metal reduction at the NMC surface, thickening of the cathode electrolyte interphase, decomposition of residual lithium carbonate, and increased cell impedance. Transition-metal dissolution is also detected through increased incorporation into and thickening of the SEI, with Mn found to be initially most prevalent, while the proportion of Ni increases with cycling. The observed evolution of anode and cathode surface layers improves our understanding of the interconnected nature of the degradation occurring at each electrode and the impact on capacity retention, informing efforts to achieve a longer cycle lifetime in Ni-rich NMCs.

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Abstract: Oxide semiconductors are key materials in many technologies from flat-panel displays，solar cells to transparent electronics. However, many potential applications are hindered by the lack of high mobility p-type oxide semiconductors due to the localized O-2p derived valence band (VB) structure. In this work, the VB structure modulation is reported for perovskite Ba2BiMO6 (M = Bi, Nb, Ta) via the Bi 6s2 lone pair state to achieve p-type oxide semiconductors with high hole mobility up to 21 cm2 V−1 s−1, and optical bandgaps widely varying from 1.5 to 3.2 eV. Pulsed laser deposition is used to grow high quality epitaxial thin films. Synergistic combination of hard x-ray photoemission, x-ray absorption spectroscopies, and density functional theory calculations are used to gain insight into the electronic structure of Ba2BiMO6. The high mobility is attributed to the highly dispersive VB edges contributed from the strong coupling of Bi 6s with O 2p at the top of VB that lead to low hole effective masses (0.4–0.7 me). Large variation in bandgaps results from the change in the energy positions of unoccupied Bi 6s orbital or Nb/Ta d orbitals that form the bottom of conduction band. P–N junction diode constructed with p-type Ba2BiTaO6 and n-type Nb doped SrTiO3 exhibits high rectifying ratio of 1.3 × 104 at ±3 V, showing great potential in fabricating high-quality devices. This work provides deep insight into the electronic structure of Bi3+ based perovskites and guides the development of new p-type oxide semiconductors.