I09-Surface and Interface Structural Analysis
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Abstract: The ability to control the structural properties of molecular layers is a key for the design and preparation of organic electronic devices. While microscopic growth studies of planar, rigid and symmetric π-conjugated molecules have been performed to a larger extent, this is less the case for elongated donor-acceptor molecules with flexible functional groups, which are particularly interesting due to their high dipole moments. Prototypical molecules of this type are merocyanines (MCs), which have been widely studied for the use as efficient absorbers in organic photodetectors. For maximized light absorption and optimized electronic properties the molecular arrangement which is affected by the initial assembly of the films at the supporting substrate interface is decisive. The situation deserves special attention, when the surface nucleation leads to so far not known and bulk-unlike aggregates. Here, we report on the growth of a typical MC (HB238) on the Ag(100) surface, serving as the substrate. In the energetically preferred phase, the molecules adsorb in a face-on geometry and organize in tetramers with a circular dipole arrangement. The tetramers further self-order in large, enantiopure domains with a periodicity that is commensurate to the Ag(100) surface, likely due to a specific bonding of the thiophene and thiazol rings to the Ag surface. Using scanning tunneling microscopy (STM) in combination with low energy electron diffraction we derive the detailed structure of the tetramers. The center of the tetramer, which is most prominent in STM images, consists of four upward pointing tert-butyl groups from four molecules. It is encircled by a ring of four hydrogen bonds between terminal CN-groups and thiophene rings on neighboring molecules. In parallel, the surface interaction modifies the intramolecular dipole, which is revealed from photoemission spectroscopy. Hence, this example shows how the surface template effect leads to an unforeseen molecular organization which is considerably more complex to that in the bulk phases of HB238, which feature paired dipoles.
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May 2023
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I09-Surface and Interface Structural Analysis
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Maria
Basso
,
Elena
Colusso
,
Chiara
Carraro
,
Curran
Kalha
,
Aysha A.
Riaz
,
Giada
Bombardelli
,
Enrico
Napolitani
,
Yu
Chen
,
Jacek
Jasieniak
,
Laura E.
Ratcliff
,
Pardeep K.
Thakur
,
Tien-Lin
Lee
,
Anna
Regoutz
,
Alessandro
Martucci
Diamond Proposal Number(s):
[29451]
Abstract: The thermochromic properties of vanadium dioxide (VO2) offer great advantages for energy-saving smart windows, memory devices, and transistors. However, the crystallization of solution-based thin films at temperatures lower than 400°C remains a challenge. Photonic annealing has recently been exploited to crystallize metal oxides, with minimal thermal damage to the substrate and reduced manufacturing time. Here, VO2 thin films, obtained via a green sol-gel process, were crystallized by pulsed excimer laser annealing. The influence of increasing laser fluence and pulse number on the film properties was systematically studied through optical, structural, morphological, and chemical characterizations. From temperature profile simulations, the temperature rise was confirmed to be confined within the film during the laser pulses, with negligible substrate heating. Threshold laser parameters to induce VO2 crystallization without surface melting were found. With respect to furnace annealing, both the crystallization temperature and the annealing time were substantially reduced, with VO2 crystallization being achieved within only 60 s of laser exposure. The laser processing was performed at room temperature in air, without the need of a controlled atmosphere. The thermochromic properties of the lasered thin films were comparable with the reference furnace-treated samples.
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May 2023
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I09-Surface and Interface Structural Analysis
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Aleksandr
Baklanov
,
Johannes T.
Kuchle
,
David A.
Duncan
,
Reinhard J.
Maurer
,
Martin
Schwarz
,
Eduardo Corral
Rascon
,
Ignacio
Piquero-Zulaica
,
Huynh Thien
Ngo
,
Alexander
Riss
,
Francesco
Allegretti
,
Willi
Auwärter
,
Paul T. P.
Ryan
Diamond Proposal Number(s):
[18874, 24276]
Abstract: We present a comprehensive, quantitative multimethod characterization of the geometric and electronic interfacial structure of zinc-porphine (Zn-P) on coinage metal supports, namely, Ag(111) and Cu(111). Complementary techniques including X-ray standing waves, X-ray photoelectron spectroscopy, scanning tunneling microscopy, bond-resolved atomic force microscopy, and density functional theory calculations reveal the molecular conformations, signal a temperature-dependence of element-specific adsorption heights, rule out a decisive role of the d10 nature of the Zn center for the adsorption configuration, and uncover a considerably increased Zn-P adsorption height on Ag(111) compared to Cu(111). Furthermore, a pronounced out-of-plane displacement of the Zn center upon water ligation is demonstrated, a manifestation of the surface trans-effect. This study thus sheds light on effects of temperature, chemical nature of the metal center, its ligation, and the coinage metal support on interfacial structure and molecular deformation of an archetypical surface-anchored metal-tetrapyrrole.
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Apr 2023
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I09-Surface and Interface Structural Analysis
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Abstract: The discovery of ferroelectricity in CMOS-compatible oxides, such as doped hafnium oxide, has opened new possibilities for electronics by reviving the use of ferroelectric implementations on modern technology platforms. This thesis presents the ground-up integration of ferroelectric HfO2 on a thermally sensitive III-V nanowire platform leading to the successful implementation of ferroelectric transistors (FeFETs), tunnel junctions (FTJs), and varactors for mm-wave applications. As ferroelectric HfO2 on III-V semiconductors is a nascent technology, a special emphasis is put on the fundamental integration issues and the various engineering challenges facing the technology.
The fabrication of metal-oxide-semiconductor (MOS) capacitors is treated as well as the measurement methods developed to investigate the interfacial quality to the narrow bandgap III-V materials using both electrical and operando synchrotron light source techniques. After optimizing both the films and the top electrode, the gate stack is integrated onto vertical InAs nanowires on Si in order to successfully implement FeFETs. Their performance and reliability can be explained from the deeper physical understanding obtained from the capacitor structures.
By introducing an InAs/(In)GaAsSb/GaSb heterostructure in the nanowire, a ferroelectric tunnel field effect transistor (ferro-TFET) is fabricated. Based on the ultra-short effective channel created by the band-to-band tunneling process, the localized potential variations induced by single ultra-scaled ferroelectric domains and individual defects are sensed and investigated. By intentionally introducing a gate-source overlap in the ferro-TFET, a non-volatile reconfigurable single-transistor solution for modulating an input signal with diverse modes including signal transmission, phase shift, frequency doubling, and mixing is implemented.
Finally, by fabricating scaled ferroelectric MOS capacitors in the front-end with a dedicated and adopted RF and mm-wave backend-of-line (BEOL) implementation, the ferroelectric behavior is captured at RF and mm-wave frequencies.
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Apr 2023
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I09-Surface and Interface Structural Analysis
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Diamond Proposal Number(s):
[24219, 31681]
Abstract: Wide bandgap oxide semiconductors have gained significant attention in the fields from flat panel displays to solar cells, but their uses have been limited by the lack of high mobility p-type oxide semiconductors. Recently, β-phase TeO2 has been identified as a promising p-type oxide semiconductor with exceptional device performance. In this Letter, we report on the electronic structure of β-TeO2 studied by a combination of high-resolution x-ray spectroscopy and hybrid density functional theory calculations. The bulk bandgap of β-TeO2 is determined to be 3.7 eV. Direct comparisons between experimental and computational results demonstrate that the top of a valence band (VB) of β-TeO2 is composed of the hybridized Te 5s, Te 5p, and O 2p states, whereas a conduction band (CB) is dominated by unoccupied Te 5p states. The hybridization between spatially dispersive Te 5s2 states and O 2p orbitals helps us to alleviate the strong localization in the VB, leading to small hole effective mass and high hole mobility in β-TeO2. The Te 5p states provide stabilizing effect to the hybridized Te 5s-O 2p states, which is enabled by structural distortions of a β-TeO2 lattice. The multiple advantages of large bandgap, high hole mobility, two-dimensional structure, and excellent stability make β-TeO2 a highly competitive material for next-generation opto-electronic devices.
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Mar 2023
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I09-Surface and Interface Structural Analysis
I21-Resonant Inelastic X-ray Scattering (RIXS)
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A. S.
Menon
,
B. J.
Johnston
,
S. G.
Booth
,
L.
Zhang
,
K.
Kress
,
B. E.
Murdock
,
G.
Paez Fajardo
,
N. N.
Anthonisamy
,
N.
Tapia-Ruiz
,
S.
Agrestini
,
M.
Garcia-Fernandez
,
K.
Zhou
,
P. K.
Thakur
,
T. L.
Lee
,
A. J.
Nedoma
,
S. A.
Cussen
,
L. F. J.
Piper
Diamond Proposal Number(s):
[29104, 29113]
Open Access
Abstract: The desire to increase the energy density of stoichiometric layered
Li
TM
O
2
(TM = 3d transition metal) cathode materials has promoted investigation into their properties at high states of charge. Although there is increasing evidence for pronounced oxygen participation in the charge compensation mechanism, questions remain whether this is true
O
-redox, as observed in
Li
-excess cathodes. Through a high-resolution
O
K-edge resonant inelastic x-ray spectroscopy (RIXS) study of the
Mn
-free
Ni
-rich layered oxide
Li
Ni
0.98
W
0.02
O
2
, we demonstrate that the same oxidized oxygen environment exists in both
Li
-excess and non-
Li
-excess systems. The observation of identical RIXS loss features in both classes of compounds is remarkable given the differences in their crystallographic structure and delithiation pathways. This lack of a specific structural motif reveals the importance of electron correlation in the charge compensation mechanism for these systems and indicates how a better description of charge compensation in layered oxides is required to understand anionic redox for energy storage.
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Mar 2023
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I09-Surface and Interface Structural Analysis
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Diamond Proposal Number(s):
[21897]
Open Access
Abstract: Preparing aqueous silicon slurries in presence of a low-pH buffer improves the cycle life of silicon electrodes considerably because of higher reversibility of the alloying process and higher resilience towards volume changes during (de)alloying. While the positive effects of processing at low pH have been demonstrated repeatedly, there are gaps in understanding of the buffer's role during the slurry preparation and the effect of buffer residues within the electrode during cycling. This study uses a combination of soft and hard X-ray photoelectron spectroscopy (SOXPES/HAXPES) to investigate the silicon particle interface after aqueous processing in both pH-neutral and citrate-buffered environments. Further, silicon electrodes are investigated after ten cycles in half-cells to identify the processing-dependant differences in the surface layer composition. By tuning the excitation energy between 100 eV and 7080 eV, a wide range of XPS probing depths were sampled to vertically map the electrode surface from top to bulk. The results demonstrate that the citrate-buffer becomes an integral part of the surface layer on Si particles and is, together with the electrode binder, part of an artificial solid-electrolyte interphase that is created during the electrode preparation and drying.
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Feb 2023
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I09-Surface and Interface Structural Analysis
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Leanne A. H.
Jones
,
Zongda
Xing
,
Jack E. N.
Swallow
,
Huw
Shiel
,
Thomas J.
Featherstone
,
Matthew J.
Smiles
,
Nicole
Fleck
,
Pardeep K.
Thakur
,
Tien-Lin
Lee
,
Laurence J.
Hardwick
,
David O.
Scanlon
,
Anna
Regoutz
,
Tim D.
Veal
,
Vinod R.
Dhanak
Diamond Proposal Number(s):
[25980]
Open Access
Abstract: A comprehensive study of bulk molybdenum dichalcogenides is presented with the use of soft and hard X-ray photoelectron (SXPS and HAXPES) spectroscopy combined with hybrid density functional theory (DFT). The main core levels of MoS2, MoSe2, and MoTe2 are explored. Laboratory-based X-ray photoelectron spectroscopy (XPS) is used to determine the ionization potential (IP) values of the MoX2 series as 5.86, 5.40, and 5.00 eV for MoSe2, MoSe2, and MoTe2, respectively, enabling the band alignment of the series to be established. Finally, the valence band measurements are compared with the calculated density of states which shows the role of p-d hybridization in these materials. Down the group, an increase in the p-d hybridization from the sulfide to the telluride is observed, explained by the configuration energy of the chalcogen p orbitals becoming closer to that of the valence Mo 4d orbitals. This pushes the valence band maximum closer to the vacuum level, explaining the decreasing IP down the series. High-resolution SXPS and HAXPES core-level spectra address the shortcomings of the XPS analysis in the literature. Furthermore, the experimentally determined band alignment can be used to inform future device work.
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Dec 2022
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I09-Surface and Interface Structural Analysis
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Diamond Proposal Number(s):
[127494]
Abstract: Conventional cathodes for Li-ion batteries are layered transition-metal oxides that support Li+ intercalation charge-balanced by redox on the transition metals. Oxidation beyond one electron per transition metal can be achieved in Li-rich layered oxides by involving structural anions, which necessitates high voltages and complex charge compensation mechanisms convoluted by degradation reactions. We report a detailed structural and spectroscopic analysis of the multielectron material Li2Ru0.3Mn0.7O3, chosen due to its low Ru content. Ex situ and operando spectroscopic data over multiple cycles highlight the changing charge compensation mechanism. Notably, over half of the first-cycle capacity is attributed to O2 gas evolution and reversible O redox is minimal. Instead, reduced Ru and Mn species are detected in the bulk and on the surface, which then increasingly contribute to charge compensation as more metal reduction occurs with cycling. Permanent structural changes linked to metal migration are observed with EXAFS and Raman analysis.
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Dec 2022
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I09-Surface and Interface Structural Analysis
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Open Access
Abstract: Understanding a material’s electronic structure is crucial to the development of many functional devices from semiconductors to solar cells and Li-ion batteries. A material’s properties, including electronic structure, are dependent on the arrangement of its atoms. However, structure determination (the process of uncovering the atomic arrangement), is impeded, both experimentally and computationally, by disorder. The lack of a verifiable atomic model presents a huge challenge when designing functional amorphous materials. Such materials may be characterised through their local atomic environments using, for example, solid-state NMR and XAS. By using these two spectroscopy methods to inform the sampling of configurations from ab initio molecular dynamics we devise and validate an amorphous model, choosing amorphous alumina to illustrate the approach due to its wide range of technological uses. Our model predicts two distinct geometric environments of AlO5 coordination polyhedra and determines the origin of the pre-edge features in the Al K-edge XAS. From our model we construct an average electronic density of states for amorphous alumina, and identify localized states at the conduction band minimum (CBM). We show that the presence of a pre-edge peak in the XAS is a result of transitions from the Al 1s to Al 3s states at the CBM. Deconvoluting this XAS by coordination geometry reveals contributions from both AlO4 and AlO5 geometries at the CBM give rise to the pre-edge, which provides insight into the role of AlO5 in the electronic structure of alumina. This work represents an important advance within the field of solid-state amorphous modelling, providing a method for developing amorphous models through the comparison of experimental and computationally derived spectra, which may then be used to determine the electronic structure of amorphous materials.
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Dec 2022
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