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Abstract: We have investigated the microstructural and crystallographic evolution of nanocrystalline zirconia under heavy ion irradiation using in-situ transmission electron microscopy (TEM) and have studied the atomic configurations of defect clusters using aberration-corrected scanning transmission electron microscopy (STEM). Under heavy ion irradiation the monoclinic-ZrO2 is observed to transform into cubic phase, stabilised by the strain induced by irradiation-induced defect clusters. We suggest that the monoclinic-to-cubic transformation is martensitic in nature with an orientation relationship identified to be (100)m∥(100)c and [001]m∥[001]c. By increasing the damage dose, both the formation of voids and irradiation-induced grain growth were observed. A model for the formation of voids is proposed, taking defect interactions into consideration. The study has also demonstrated that high resolution orientation mapping by transmission Kikuchi diffraction (TKD) combined with in-situ irradiation in a TEM is a powerful method to probe the mechanisms controlling irradiation-induced processes, including grain boundary migration, phase transformations and texture evolution.

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Abstract: Suspended specimens of 2D crystals and their heterostructures are required for a range of studies including transmission electron microscopy (TEM), optical transmission experiments and nanomechanical testing. However, investigating the properties of laterally small 2D crystal specimens, including twisted bilayers and air sensitive materials, has been held back by the difficulty of fabricating the necessary clean suspended samples. Here we present a scalable solution which allows clean free-standing specimens to be realized with 100% yield by dry-stamping atomically thin 2D stacks onto a specially developed adhesion-enhanced support grid. Using this new capability, we demonstrate atomic resolution imaging of defect structures in atomically thin CrBr3, a novel magnetic material which degrades in ambient conditions.

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Abstract: Defect engineering can enhance key properties of metal-organic frameworks (MOFs). Tailoring the distribution of de-fects, for example in correlated nanodomains, requires characterization across length scales. However, a critical na-noscale characterization gap has emerged between the bulk diffraction techniques used to detect defect nanodomains and the sub-nanometer imaging used to observe individual defects. Here, we demonstrate that the emerging technique of scanning electron diffraction (SED) can bridge this gap uniquely enabling both nanoscale crystallographic analysis and the low-dose formation of multiple diffraction contrast images for defect analysis in MOFs. We directly image defect nanodomains in the MOF UiO-66(Hf) over an area of ca. 1 000 nm and with a spatial resolution ca. 5 nm to reveal domain morphology and distribution. Based on these observations, we suggest possible crystal growth processes underpinning synthetic control of defect nanodomains. We also identify likely dislocations and small angle grain boundaries, illustrating that SED could be a key technique in developing the potential for engineering the distribution of defects, or “microstruc-ture”, in functional MOF design.

Open Access

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Abstract: Cryo-electron microscopy is an essential tool for high-resolution structural studies of biological systems. This method relies on the use of phase contrast imaging at high defocus to improve information transfer at low spatial frequencies at the expense of higher spatial frequencies. Here we demonstrate that electron ptychography can recover the phase of the specimen with continuous information transfer across a wide range of the spatial frequency spectrum, with improved transfer at lower spatial frequencies, and as such is more efficient for phase recovery than conventional phase contrast imaging. We further show that the method can be used to study frozen-hydrated specimens of rotavirus double-layered particles and HIV-1 virus-like particles under low-dose conditions (5.7 e/Å2) and heterogeneous objects in an Adenovirus-infected cell over large fields of view (1.14 × 1.14 μm), thus making it suitable for studies of many biologically important structures.

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Abstract: Halide perovskite materials have promising performance characteristics for low-cost optoelectronic applications. Photovoltaic devices fabricated from perovskite absorbers have reached power conversion efficiencies above 25 per cent in single-junction devices and 28 per cent in tandem devices. This strong performance (albeit below the practical limits of about 30 per cent and 35 per cent, respectively) is surprising in thin films processed from solution at low-temperature, a method that generally produces abundant crystalline defects. Although point defects often induce only shallow electronic states in the perovskite bandgap that do not affect performance, perovskite devices still have many states deep within the bandgap that trap charge carriers and cause them to recombine non-radiatively. These deep trap states thus induce local variations in photoluminescence and limit the device performance. The origin and distribution of these trap states are unknown, but they have been associated with light-induced halide segregation in mixed-halide perovskite compositions and with local strain, both of which make devices less stable. Here we use photoemission electron microscopy to image the trap distribution in state-of-the-art halide perovskite films. Instead of a relatively uniform distribution within regions of poor photoluminescence efficiency, we observe discrete, nanoscale trap clusters. By correlating microscopy measurements with scanning electron analytical techniques, we find that these trap clusters appear at the interfaces between crystallographically and compositionally distinct entities. Finally, by generating time-resolved photoemission sequences of the photo-excited carrier trapping process, we reveal a hole-trapping character with the kinetics limited by diffusion of holes to the local trap clusters. Our approach shows that managing structure and composition on the nanoscale will be essential for optimal performance of halide perovskite devices.