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Instruments / Technical Area	Publication Details	Published	Actions
I05-ARPES	Uniaxial strain-induced phase transition in the 2D topological semimetal IrTe2 Christopher W. Nicholson , Maxime Rumo , Aki Pulkkinen , Geoffroy Kremer , Björn Salzmann , Marie-Laure Mottas , Baptiste Hildebrand , Thomas Jaouen , Timur K. Kim , Saumya Mukherjee , Keyuan Ma , Matthias Muntwiler , Fabian O. Von Rohr , Cephise Cacho , Claude Monney Communications Materials 2 DOI: 10.1038/s43246-021-00130-5 Diamond Proposal Number(s): [24880] Open Access Show Abstract ▼ Abstract: Strain is ubiquitous in solid-state materials, but despite its fundamental importance and technological relevance, leveraging externally applied strain to gain control over material properties is still in its infancy. In particular, strain control over the diverse phase transitions and topological states in two-dimensional transition metal dichalcogenides remains an open challenge. Here, we exploit uniaxial strain to stabilize the long-debated structural ground state of the 2D topological semimetal IrTe2, which is hidden in unstrained samples. Combined angle-resolved photoemission spectroscopy and scanning tunneling microscopy data reveal the strain-stabilized phase has a 6 × 1 periodicity and undergoes a Lifshitz transition, granting unprecedented spectroscopic access to previously inaccessible type-II topological Dirac states that dominate the modified inter-layer hopping. Supported by density functional theory calculations, we show that strain induces an Ir to Te charge transfer resulting in strongly weakened inter-layer Te bonds and a reshaped energetic landscape favoring the 6×1 phase. Our results highlight the potential to exploit strain-engineered properties in layered materials, particularly in the context of tuning inter-layer behavior.	Mar 2021
	Determination of the preferred reaction pathway of acetophenone on Si(001) using photoelectron diffraction Paula Laborda Lalaguna , Holly Hedgeland , Paul Ryan , Oliver Warschkow , Matthias Muntwiler , Andrew Teplyakov , Steven R Schofield , David Andrew Duncan Journal Of Physics: Condensed Matter DOI: 10.1088/1361-648X/abe6dd Open Access Show Abstract ▼ Abstract: The adsorption configurations of a technologically relevant model organic adsorbate on the silicon (001) surface were studied using energy scanned X-ray photoelectron diffraction (PhD). Previous work has established the existence of an interesting vertically-aligned ("flagpole") configuration, where the acetophenone attaches to Si(001) via the acetyl group carbon and oxygen atoms. DFT calculations have predicted two energetically similar variants of this structure, where the phenyl ring is orientated parallel or perpendicular to the rows of silicon dimers on this reconstructed surface. However, previously published experimental measurements, including scanning tunnelling microscopy, X-ray photoelectron spectroscopy, and near-edge X-ray absorption fine structure investigations were unable to distinguish between these two configurations. Here, we apply the unique experimental capabilities of the PhD technique to this system and demonstrate that the dominant adsorption configuration has the phenyl ring parallel to the dimer rows (the end-bridge structure). This information in turn facilitates the determination of the dominant reaction pathway for acetophenone on Si(001), which has remained elusive until now. Information about subtle preferences in reaction pathways that affect the alignment and orientation of organic adsorbates such as acetophenone on technologically-relevant semiconductor surfaces such as Si(001) is critical for the fabrication of future atomically-precise atomic and molecular-scale electronic devices utilising the organic-silicon interface, and this work demonstrates the unique and complementary capabilities of PhD for providing this information.	Feb 2021

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