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Instruments / Technical Area	Publication Details	Published	Actions
I06-Nanoscience (XPEEM)	Engineering exchange bias at the interface of self-polarized ultrathin ferroelectric Ba⁢Ti⁢O3 and ferromagnetic La0.67⁢Sr0.33⁢Mn⁢O3 Tuhin Maity , Manisha Bansal , Nives Strkalj , Kapildeb Dolui , Di Zhang , Zihao He , Guillaume F Nataf , Adam Lovett , Massimo Ghidini , Sarnjeet S. Dhesi , Ping Lu , Haiyan Wang , Weiwei Li , Judith L. Macmanus-Driscoll Physical Review Applied 22 DOI: 10.1103/PhysRevApplied.22.054035 Diamond Proposal Number(s): [22427] Open Access Show Abstract ▼ Abstract: We investigate the emergence and optimization of conventional exchange bias (EB) in ultrathin (<10 nm) ferroelectric (FE) Ba⁢Ti⁢O3 (BTO)/ferromagnetic (FM) La0.67⁢Sr0.33⁢Mn⁢O3 (LSMO) epitaxial bilayers without an antiferromagnetic (AFM) material. The EB originates from the electronic orbital reconstruction at the FE-FM interface due to the ferroelectric polarization. We achieve maximum EB of approximately 42 Oe with single-domain polarization in nine-unit-cell-thick BTO, setting the BTO thickness above the critical threshold for ferroelectricity yet below the thickness of strain relaxation and multidomain breakdown. Furthermore, the LSMO layer needs to be thick enough to sustain both the FM layer and polarization-induced AFM spin configuration at the LSMO/BTO interface, yet as thin as possible to enable the EB loop shift. The temperature, training, field, and thickness dependence of the EB confirm that the LSMO/BTO interface exhibits conventional EB despite its unconventional origin. Using x-ray magnetic circular dichroism, scanning transmission electron microscopy, and density-functional-theory calculations, we confirm that the macroscopic EB effect originates from the interfacial AFM spin configuration in LSMO driven by FE-induced d-orbital modifications in interfacial Mn ions. Thus, we engineer strong interfacial EB coupling in artificial multiferroics without a conventional AFM material by controlling FE polarization, highlighting the potential for advanced spintronic applications.	Nov 2024
I06-Nanoscience (XPEEM)	Quantitative atomic order characterization of a Mn2FeAl Heusler epitaxial thin film S. Kurdi , Y. Sakuraba , K. Masuda , H. Tajiri , B. Nair , G. F. Nataf , M. E. Vickers , G. Reiss , M Meinert , S. S. Dhesi , Massimo Ghidini , Z H Barber Journal Of Physics D: Applied Physics DOI: 10.1088/1361-6463/ac4e32 Diamond Proposal Number(s): [18932] Open Access Show Abstract ▼ Abstract: In this work, we investigate the effect of anti-site disorder on the half-metallic properties of a Mn2FeAl Heusler alloy thin film. The film was grown on TiN-buffered MgO 001 substrates via magnetron sputtering. A detailed structural characterization using X-ray diffraction (XRD) and anomalous XRD showed that the film crystallizes in the partially disordered L21B structure with 33% disorder between the Mn(B) and Al(D) sites. We measure a positive anisotropic magnetoresistance in the film, which is an indication of non-half metallic behaviour. Our X-ray magnetic circular dichroism sum rules analysis shows that Mn carries the magnetic moment in the film, as predicted, with a positive Fe moment. Experimentally determined moments correspond most closely with those found by density functional calculated ones for the L21B structure with Mn(B) and Al(D) site disorder, matching the experimental structural analysis. We thus attribute the deviation from half-metallic behaviour to the formation of the L21B structure, which we support by density functional theory calculations. To realize a half-metallic Mn2FeAl film it is important that the inverse Heusler XA structure is stabilized with minimal anti-site atomic disorder.	Jan 2022

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