Detectors
|
David
Omar
,
Giulio
Crevatin
,
Alan
Greer
,
Ian
Horswell
,
Jonathan
Spiers
,
Richard
Plackett
,
Paul
Booker
,
Gale
Lockwood
,
Dan
Beckett
,
Emily
Galvin
,
John
Lipp
,
Michelangelo
Di Palo
,
Mark
Warren
,
Scott
Williams
,
Nicola
Tartoni
Open Access
Abstract: This paper describes the development of the Tristan 10M detector for time resolved synchrotron experiments. Tristan 10M has an unprecedented time resolution (ns time scale) over long duration continuous acquisition (days). The detector is constructed from an array of 160 Timepix3 readout ASIC (about 10 million pixels) flip chip bonded to 10 monolithic silicon sensors which enable it to cover an area large enough to effectively carry out crystallography experiments. The large array of ASICs resulted in a number of severe technical challenges that had to be overcome during the development of the detector. The minimization of the dead area between sensors required the development of a very challenging mechanical and electronic packaging. Such a packaging had to be able to route the large number of data and power lines within the footprint of a sensor, had to effectively sink the heat generated by the ASICs, and had to be able to position the sensors accurately. In addition, the packaging of the detector was designed to be scalable in consideration of possible future larger versions of this detector which added a further challenge. The data driven nature of Timepix3 and the sheer data volume produced by the array of ASICs required us to devise a dedicated hardware, firmware, and software data acquisition architecture. This architecture proved very effective during the commissioning of Tristan10M when time resolved crystallography experiments were carried out.
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Sep 2022
|
|
B16-Test Beamline
Detectors
|
K.
Metodiev
,
M.
Mironova
,
D.
Bortoletto
,
R.
Plackett
,
P.
Allport
,
I.
Asensi Tortajada
,
R.
Cardella
,
F.
Dachs
,
V.
Dao
,
M.
Dyndal
,
L.
Flores Sanz De Acedo
,
P.
Freeman
,
A.
Gabrielli
,
L.
Gonella
,
M.
Munker
,
H.
Pernegger
,
F.
Piro
,
P.
Riedler
,
A.
Sharma
,
E. J.
Schioppa
,
I.
Shipsey
,
W.
Snoeys
,
C.
Solans Sanchez
,
H.
Wennloef
,
D. P.
Weatherill
,
D.
Wood
,
S.
Worm
Diamond Proposal Number(s):
[2206]
Abstract: Detector prototypes are commonly characterised in testbeams, either using charged particles or X-rays. Charged particles are used to quantify detector performance in terms of absolute efficiency, while X-rays can provide additional information about the detector structure. This paper presents an alternative approach to calculating charged particle efficiencies, using the results of an X-ray testbeam of the mini-MALTA CMOS prototype at Diamond Light Source, and additional laboratory measurements. Results are presented for an unirradiated and an irradiated sample and compared to the results of charged particle testbeams at SPS and ELSA. The extrapolated efficiencies are in agreement with the measured values. Additionally, the extrapolated efficiency maps provide more insight about the location of the pixel inefficiencies, due to the better spatial resolution of the X-ray testbeam.
|
Aug 2020
|
|
B16-Test Beamline
|
M.
Mironova
,
K.
Metodiev
,
P.
Allport
,
I.
Berdalovic
,
Daniela
Bortoletto
,
C.
Buttar
,
R.
Cardella
,
V.
Dao
,
M.
Dyndal
,
P.
Freeman
,
L.
Flores Sanz De Acedo
,
L.
Gonella
,
T.
Kugathasan
,
H.
Pernegger
,
F.
Piro
,
R.
Plackett
,
P.
Riedler
,
A.
Sharma
,
E. J.
Schioppa
,
I.
Shipsey
,
C.
Solans Sanchez
,
W.
Snoeys
,
H.
Wennlöf
,
D.
Weatherill
,
D.
Wood
,
S.
Worm
Diamond Proposal Number(s):
[2206]
Abstract: This paper outlines the results of investigations into the effects of radiation damage in the mini-MALTA depleted monolithic pixel sensor prototype. Measurements were carried out at Diamond Light Source using a micro-focus X-ray beam, which scanned across the surface of the device in 2
μm
steps. This allowed the in-pixel photon response to be measured directly with high statistics. Three pixel design variations were considered: one with the standard continuous
n−
layer layout and front-end, and extra deep p-well and
n−
gap designs with a modified front-end. Five chips were measured: one unirradiated, one neutron irradiated, and three proton irradiated. The standard design showed a decrease of 12% in pixel response after irradiation to 1e15
neq∕cm2
. For the two new designs the pixel response did not decrease significantly after irradiation. A decrease of pixel response at high biasing voltages was observed. The charge sharing in the chip was quantified and found to be in agreement with expectations.
|
Mar 2020
|
|
B16-Test Beamline
Metrology
|
Diamond Proposal Number(s):
[15400]
Abstract: We report on the production and testing of an array of active edge silicon sensors as a prototype of a large array. Four Medipix3RX.1 chips were bump bonded to four single chip sized Advacam active edge n-on-n sensors. These detectors were then mounted into a 2 by 2 array and tested on B16 at Diamond Light Source with an x-ray beam spot of 2um. The results from these tests, compared with optical metrology demonstrate that this type of sensor is sensitive to the physical edge of the silicon, with only a modest loss of efficiency in the final two rows of pixels. We present the efficiency maps recorded with the microfocus beam and a sample powder diffraction measurement. These results give confidence that this sensor technology can be used effectively in larger arrays of detectors at synchrotron light sources.
|
Oct 2017
|
|
Detectors
|
J. A.
Mir
,
R.
Clough
,
R.
Macinnes
,
C.
Gough
,
R.
Plackett
,
I.
Shipsey
,
H.
Sawada
,
I.
Maclaren
,
R.
Ballabriga
,
D.
Maneuski
,
V.
O'Shea
,
D.
Mcgrouther
,
A. I.
Kirkland
Open Access
Abstract: In this paper we report quantitative measurements of the imaging performance for the current generation of hybrid pixel detector, Medipix3, used as a direct electron detector. We have measured the modulation transfer function and detective quantum efficiency at beam energies of 60 & 80 keV. In single pixel mode, energy threshold values can be chosen to maximize either the modulation transfer function or the detective quantum efficiency, obtaining values near to, or exceeding those for a theoretical detector with square pixels. The Medipix3 charge summing mode delivers simultaneous, high values of both modulation transfer function and detective quantum efficiency. We have also characterized the detector response to single electron events and describe an empirical model that predicts the detector modulation transfer function and detective quantum efficiency based on energy threshold. Exemplifying our findings we demonstrate the Medipix3 imaging performance recording a fully exposed electron diffraction pattern at 24-bit depth together with images in single pixel and charge summing modes. Our findings highlight that for transmission electron microscopy performed at low energies (energies <100 keV) thick hybrid pixel detectors provide an advantageous architecture for direct electron imaging.
|
Jun 2017
|
|
B16-Test Beamline
|
Kestutis
Kanisauskas
,
A.
Affolder
,
K.
Arndt
,
Richard
Bates
,
M.
Benoit
,
F. Di
Bello
,
A.
Blue
,
D.
Bortoletto
,
M.
Buckland
,
Craig
Buttar
,
P.
Caragiulo
,
D.
Das
,
J.
Dopke
,
A.
Dragone
,
F.
Ehrler
,
V.
Fadeyev
,
Z.
Galloway
,
H.
Grabas
,
I. M.
Gregor
,
P.
Grenier
,
A.
Grillo
,
B.
Hiti
,
M.
Hoeferkamp
,
L. B. A.
Hommels
,
B. T.
Huffman
,
J.
John
,
C.
Kenney
,
J.
Kramberger
,
Z.
Liang
,
I.
Mandic
,
Dzmitry
Maneuski
,
F.
Martinez-Mckinney
,
S.
Macmahon
,
L.
Meng
,
M.
Mikuž
,
D.
Muenstermann
,
R.
Nickerson
,
I.
Peric
,
P.
Phillips
,
R.
Plackett
,
F.
Rubbo
,
J.
Segal
,
S.
Seidel
,
A.
Seiden
,
I.
Shipsey
,
W.
Song
,
M.
Staniztki
,
D.
Su
,
C.
Tamma
,
R.
Turchetta
,
L.
Vigani
,
J.
Volk
,
R.
Wang
,
M.
Warren
,
F.
Wilson
,
S.
Worm
,
Qinglei
Xiu
,
J.
Zhang
,
H.
Zhu
Diamond Proposal Number(s):
[10391]
Open Access
Abstract: CMOS active pixel sensors are being investigated for their potential use in the ATLAS inner tracker upgrade at the HL-LHC. The new inner tracker will have to handle a significant increase in luminosity while maintaining a sufficient signal-to-noise ratio and pulse shaping times. This paper focuses on the prototype chip "HVStripV1" (manufactured in the AMS HV-CMOS 350nm process) characterization before and after irradiation up to fluence levels expected for the strip region in the HL-LHC environment. The results indicate an increase of depletion region after irradiation for the same bias voltage by a factor of ≈2.4 and ≈2.8 for two active pixels on the test chip. There was also a notable increase in noise levels from 85 e− to 386 e− and from 75 e− to 277 e− for the corresponding pixels.
|
Feb 2017
|
|
|
|
K.
Akiba
,
J.
Alozy
,
R.
Aoude
,
M. Van
Beuzekom
,
J.
Buytaert
,
P.
Collins
,
A. Dosil
Suárez
,
R.
Dumps
,
A.
Gallas
,
C.
Hombach
,
Daniel
Hynds
,
M.
John
,
A.
Leflat
,
Y.
Li
,
E. Pérez
Trigo
,
Richard
Plackett
,
M. M.
Reid
,
P. Rodríguez
Pérez
,
H.
Schindler
,
P.
Tsopelas
,
C. Vázquez
Sierra
,
J. J.
Velthuis
,
M.
Wysokiński
Open Access
Abstract: While designed primarily for X-ray imaging applications, the Medipix3 ASIC can also
be used for charged-particle tracking. In this work, results from a beam test at the CERN SPS with
irradiated and non-irradiated sensors are presented and shown to be in agreement with simulation,
demonstrating the suitability of the Medipix3 ASIC as a tool for characterising pixel sensors.
|
Jan 2016
|
|
B16-Test Beamline
Detectors
|
Eva
Gimenez-Navarro
,
Rafael
Ballabriga
,
Gabriel
Blaj
,
Michael
Campbell
,
Igor
Dolbnya
,
Erik
Frodjh
,
Ian
Horswell
,
Xavier
Llopart-Cudie
,
Julien
Marchal
,
John
Mcgrath
,
David
Omar
,
Richard
Plackett
,
Kawal
Sawhney
,
Nicola
Tartoni
Abstract: The Medipix3RX is the latest version of the Medipix3 photon counting ASICs, which implements two new operational modes, with respect to the Medipix2 ASIC, aimed at eliminating charge shared events (referred to as Charge Summing Mode (CSM)) and at providing spectroscopic information (referred to as Colour Mode (CM)). The Medipix3RX is a redesign of the Medipix3v0 ASIC and corrects for the underperformance of CSM features observed in the previous version. This paper presents the results from synchrotron X-rays tests to evaluate the Medipix3RX ASIC performance. The newly implemented CSM algorithm eliminates the charge sharing effect at the same time as allocating the event to the readout pixel corresponding to the sensor pixel where the X-ray photon impinged. The new pixel trimming circuit led to a reduced dispersion between pixels. Further results of the linearity for all the gain modes, energy resolution and pixel uniformity are also presented.
|
Jun 2015
|
|
Detectors
|
K.
Akiba
,
M.
Artuso
,
V.
Van Beveren
,
M.
Van Beuzekom
,
H.
Boterenbrood
,
J.
Buytaert
,
P.
Collins
,
R.
Dumps
,
B.
Van Der Heijden
,
C.
Hombach
,
D.
Hynds
,
D.
Hsu
,
M.
John
,
E.
Koffeman
,
A.
Leflat
,
Y.
Li
,
I.
Longstaff
,
A.
Morton
,
E.
Pérez Trigo
,
R
Plackett
,
M M
Reid
,
P.
Rodríguez Perez
,
H.
Schindler
,
P.
Tsopelas
,
C.
Vázquez Sierra
,
M.
Wysokiński
Open Access
Abstract: The performance of prototype active-edge VTT sensors bump-bonded to the Timepix ASIC is presented. Non-irradiated sensors of thicknesses 100–200 μm and pixel-to-edge distances of 50 μm and 100 μm were probed with a beam of charged hadrons with sub-pixel precision using the Timepix telescope assembled at the SPS at CERN. The sensors are shown to be highly efficient up to a few micrometers from the physical edge of the sensor. The distortion of the electric field lines at the edge of the sensors is studied by reconstructing the streamlines of the electric field using two-pixel clusters. These results are supported by TCAD simulations. The reconstructed streamlines are used to study the field distortion as a function of the bias voltage and to apply corrections to the cluster positions at the edge.
|
Mar 2015
|
|
B16-Test Beamline
|
Dzmitry
Maneuski
,
Richard
Bates
,
Andrew
Blue
,
C.
Buttar
,
Kate
Doonan
,
Lars
Eklund
,
Eva
Gimenez-Navarro
,
D.
Hynds
,
Slava
Kachkanov
,
J.
Kalliopuska
,
Thomas
Mcmullen
,
V.
O'Shea
,
Nicola
Tartoni
,
Richard
Plackett
,
S.
Vahanen
,
Kennenth
Wraight
Diamond Proposal Number(s):
[9405, 10390]
Open Access
Abstract: Silicon sensor technologies with reduced dead area at the sensor's perimeter are under development at a number of institutes. Several fabrication methods for sensors which are sensitive close to the physical edge of the device are under investigation utilising techniques such as active-edges, passivated edges and current-terminating rings. Such technologies offer the goal of a seamlessly tiled detection surface with minimum dead space between the individual modules. In order to quantify the performance of different geometries and different bulk and implant types, characterisation of several sensors fabricated using active-edge technology were performed at the B16 beam line of the Diamond Light Source. The sensors were fabricated by VTT and bump-bonded to Timepix ROICs. They were 100 and 200 μm thick sensors, with the last pixel-to-edge distance of either 50 or 100 μm. The sensors were fabricated as either n-on-n or n-on-p type devices. Using 15 keV monochromatic X-rays with a beam spot of 2.5 μm, the performance at the outer edge and corners pixels of the sensors was evaluated at three bias voltages. The results indicate a significant change in the charge collection properties between the edge and 5th (up to 275 μm) from edge pixel for the 200 μ m thick n-on-n sensor. The edge pixel performance of the 100 μm thick n-on-p sensors is affected only for the last two pixels (up to 110 μm) subject to biasing conditions. Imaging characteristics of all sensor types investigated are stable over time and the non-uniformities can be minimised by flat-field corrections. The results from the synchrotron tests combined with lab measurements are presented along with an explanation of the observed effects.
|
Mar 2015
|
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