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Instruments / Technical Area	Publication Details	Published
B16-Test Beamline	Edge pixel response studies of edgeless silicon sensor technology for pixellated imaging detectors Dzmitry Maneuski , Richard Bates , Andrew Blue , C. Buttar , Kate Doonan , Lars Eklund , Eva Gimenez-Navarro , D. Hynds , Slava Kachkanov , J. Kalliopuska , Thomas Mcmullen , V. O'Shea , Nicola Tartoni , Richard Plackett , S. Vahanen , Kennenth Wraight Journal Of Instrumentation 10, P03018 - P03018 DOI: 10.1088/1748-0221/10/03/P03018 Diamond Proposal Number(s): [9405, 10390] Open Access Show Abstract ▼ Abstract: Silicon sensor technologies with reduced dead area at the sensor's perimeter are under development at a number of institutes. Several fabrication methods for sensors which are sensitive close to the physical edge of the device are under investigation utilising techniques such as active-edges, passivated edges and current-terminating rings. Such technologies offer the goal of a seamlessly tiled detection surface with minimum dead space between the individual modules. In order to quantify the performance of different geometries and different bulk and implant types, characterisation of several sensors fabricated using active-edge technology were performed at the B16 beam line of the Diamond Light Source. The sensors were fabricated by VTT and bump-bonded to Timepix ROICs. They were 100 and 200 μm thick sensors, with the last pixel-to-edge distance of either 50 or 100 μm. The sensors were fabricated as either n-on-n or n-on-p type devices. Using 15 keV monochromatic X-rays with a beam spot of 2.5 μm, the performance at the outer edge and corners pixels of the sensors was evaluated at three bias voltages. The results indicate a significant change in the charge collection properties between the edge and 5th (up to 275 μm) from edge pixel for the 200 μ m thick n-on-n sensor. The edge pixel performance of the 100 μm thick n-on-p sensors is affected only for the last two pixels (up to 110 μm) subject to biasing conditions. Imaging characteristics of all sensor types investigated are stable over time and the non-uniformities can be minimised by flat-field corrections. The results from the synchrotron tests combined with lab measurements are presented along with an explanation of the observed effects.	Mar 2015
I15-Extreme Conditions	Comparison of energy resolution spectra of CdTe TIMEPIX detector working in photon counting and time-over-threshold mode David Krapohl , Chrsiter Frojdh , Goran Thungstrom , Erik Frojdh , Eva Gimenez-navarro , Heribert Wilhelm , Nicola Tartoni , Dzmitry Maneuski , Val O'shea , Kennenth Wraight Nuclear Science Symposium and Medical Imaging Conference DOI: 10.1109/NSSMIC.2013.6829825 Show Abstract ▼ Abstract: Hybrid pixel detectors like the Medipix and TIMEPIX developed by the Medipix collaboration combined with high-z materials are of growing interest. In particular the TIMEPIX detector can be operated in photon counting mode and time-over-threshold mode (ToT) to obtain spectral information. Previous studies showed that 110ìm pixel sizes obtain a better energy resolution than 55ìm pixel sizes. Furthermore, threshold scans obtained a better spectral resolution than operation in ToT mode. In this work the influence of noise sources in different measurement approaches on the spectral response of a TIMEPIX chip bump-bonded to CdTe sensor are presented. Two 1mm thick CdTe sensors with pixel sizes of 55ìm and 110 ìm, bump-bonded to a TIMEPIX readout chip, were evaluated at the Diamond Light Source synchrotron. A finely collimated, perpendicular pencil beam with x-ray energies of 25 keV and 79 keV was used to investigate single pixels. A small area of 10x10 pixels was investigated in ToT-mode and compared to a threshold scan of the same pixels on both detectors. The measurements are compared to an analytical SPICE/Python simulation	Nov 2013
I15-Extreme Conditions	Imaging and spectroscopic performance studies of pixellated CdTe Timepix detector D. Maneuski , V. Astromskas , E. Frojdh , C. Fröjdh , Eva Gimenez-Navarro , Julien Marchal , V. O'Shea , G. Stewart , Nicola Tartoni , Heribert Wilhelm , K. Wraight , R. M. Zain Journal Of Instrumentation 7, C01038 - C01038 DOI: 10.1088/1748-0221/7/01/C01038 Show Abstract ▼ Abstract: In this work the results on imaging and spectroscopic performances of 14 × 14 × 1 mm CdTe detectors with 55 × 55 ?m and 110 × 110 ?m pixel pitch bump-bonded to a Timepix chip are presented. The performance of the 110 × 110 ?m pixel detector was evaluated at the extreme conditions beam line I15 of the Diamond Light Source. The energy of X-rays was set between 25 and 77 keV. The beam was collimated through the edge slits to 20 ?m FWHM incident in the middle of the pixel. The detector was operated in the time-over-threshold mode, allowing direct energy measurement. Energy in the neighbouring pixels was summed for spectra reconstruction. Energy resolution at 77 keV was found to be ?E/E = 3.9%. Comparative imaging and energy resolution studies were carried out between two pixel size detectors with a fluorescence target X-ray tube and radioactive sources. The 110 × 110 ?m pixel detector exhibited systematically better energy resolution in comparison to 55 × 55 ?m. An imaging performance of 55 × 55 ?m pixellated CdTe detector was assessed using the Modulation Transfer Function (MTF) technique and compared to the larger pixel. A considerable degradation in MTF was observed for bias voltages below -300 V. Significant room for improvement of the detector performance was identified both for imaging and spectroscopy and is discussed.	Jan 2012

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