I06-Nanoscience
|
G.
Awana
,
R.
Fujita
,
A.
Frisk
,
P.
Chen
,
Q.
Yao
,
A. J.
Caruana
,
C. J.
Kinane
,
N.-J.
Steinke
,
S.
Langridge
,
P.
Olalde-Velasco
,
S. S.
Dhesi
,
G.
Van Der Laan
,
X. F.
Kou
,
S. L.
Zhang
,
T.
Hesjedal
,
D.
Backes
Diamond Proposal Number(s):
[23748]
Open Access
Abstract: An elegant approach to overcome the intrinsic limitations of magnetically doped topological insulators is to bring a topological insulator in direct contact with a magnetic material. The aspiration is to realize the quantum anomalous Hall effect at high temperatures where the symmetry-breaking magnetic field is provided by a proximity-induced magnetization at the interface. Hence, a detailed understanding of the interfacial magnetism in such heterostructures is crucial, yet its distinction from structural and magnetic background effects is a rather nontrivial task. Here, we combine several magnetic characterization techniques to investigate the magnetic ordering in
MnTe
/
Bi
2
Te
3
heterostructures. A magnetization profile of the layer stack is obtained using depth-sensitive polarized neutron reflectometry. The magnetic constituents are characterized in more detail using element-sensitive magnetic x-ray spectroscopy. Magnetotransport measurements provide additional information about the magnetic transitions. We find that the supposedly antiferromagnetic MnTe layer does not exhibit an x-ray magnetic linear dichroic signal, raising doubt that it is in its antiferromagnetic state. Instead, Mn seems to penetrate into the surface region of the
Bi
2
Te
3
layer. Furthermore, the interface between MnTe and
Bi
2
Te
3
is not abrupt, but extending over
∼
2.2
nm. These conditions are the likely reason that we do not observe proximity-induced magnetization at the interface. Our findings illustrate the importance of not solely relying on one single technique as proof for proximity-induced magnetism at interfaces. We demonstrate that a holistic, multitechnique approach is essential to gain a more complete picture of the magnetic structure in which the interface is embedded.
|
May 2022
|
|
I06-Nanoscience
|
X.
Gu
,
C.
Chen
,
W. S.
Wei
,
L. L.
Gao
,
J. Y.
Liu
,
X.
Du
,
D.
Pei
,
J. S.
Zhou
,
R. Z.
Xu
,
Z. X.
Yin
,
W. X.
Zhao
,
Y. D.
Li
,
C.
Jozwiak
,
A.
Bostwick
,
E.
Rotenberg
,
D.
Backes
,
L. S. I.
Veiga
,
S.
Dhesi
,
T.
Hesjedal
,
G.
Van Der Laan
,
H. F.
Du
,
W. J.
Jiang
,
Y. P.
Qi
,
G.
Li
,
W. J.
Shi
,
Z. K.
Liu
,
Y. L.
Chen
,
L. X.
Yang
Diamond Proposal Number(s):
[27482]
Abstract: Crystal geometry can greatly influence the emergent properties of quantum materials. As an example, the kagome lattice is an ideal platform to study the rich interplay between topology, magnetism, and electronic correlation. In this work, combining high-resolution angle-resolved photoemission spectroscopy and ab initio calculation, we systematically investigate the electronic structure of
X
Mn
6
Sn
6
(
X
=
Dy
,
Tb
,
Gd
,
Y
)
family compounds. We observe the Dirac fermion and the flat band arising from the magnetic kagome lattice of Mn atoms. Interestingly, the flat band locates in the same energy region in all compounds studied, regardless of their different magnetic ground states and
4
f
electronic configurations. These observations suggest a robust Mn magnetic kagome lattice across the
X
Mn
6
Sn
6
family, thus providing an ideal platform for the search for, and investigation of, new emergent phenomena in magnetic topological materials.
|
Apr 2022
|
|
I06-Nanoscience
|
Dong
Li
,
Bonan
Zhu
,
Dirk
Backes
,
Larissa S. I.
Veiga
,
Tien-Lin
Lee
,
Hongguang
Wang
,
Qian
He
,
Pinku
Roy
,
Jiaye
Zhang
,
Jueli
Shi
,
Aiping
Chen
,
Peter A.
Van Aken
,
Quanxi
Jia
,
Sarnjeet S.
Dhesi
,
David O.
Scanlon
,
Kelvin H. L.
Zhang
,
Weiwei
Li
Diamond Proposal Number(s):
[25425, 26901, 29616]
Abstract: Strain engineering of epitaxial transition metal oxide heterostructures offers an intriguing opportunity to control electronic structures by modifying the interplay between spin, charge, orbital, and lattice degrees of freedom. Here, we demonstrate that the electronic structure, magnetic and transport properties of
La
0.9
Ba
0.1
MnO
3
thin films can be effectively controlled by epitaxial strain. Spectroscopic studies and first-principles calculations reveal that the orbital occupancy in Mn
e
g
orbitals can be switched from the
d
3
z
2
−
r
2
orbital to the
d
x
2
−
y
2
orbital by varying the strain from compressive to tensile. The change of orbital occupancy associated with Mn
3
d
-O
2
p
hybridization leads to dramatic modulation of the magnetic and electronic properties of strained
La
0.9
Ba
0.1
MnO
3
thin films. Under moderate tensile strain, an emergent ferromagnetic insulating state with an enhanced ferromagnetic Curie temperature of 215 K is achieved. These findings not only deepen our understanding of electronic structures, magnetic and transport properties in the
La
0.9
Ba
0.1
MnO
3
system, but also demonstrate the use of epitaxial strain as an effective knob to tune the electronic structures and related physical properties for potential spintronic device applications.
|
Apr 2022
|
|
I06-Nanoscience
|
S. P.
Bommanaboyena
,
D.
Backes
,
L. S. I.
Veiga
,
S. S.
Dhesi
,
Y. R.
Niu
,
B.
Sarpi
,
T.
Denneulin
,
A.
Kovács
,
T.
Mashoff
,
O.
Gomonay
,
J.
Sinova
,
K.
Everschor-Sitte
,
D.
Schönke
,
R. M.
Reeve
,
M.
Klaui
,
H.-J.
Elmers
,
M.
Jourdan
Diamond Proposal Number(s):
[29305]
Open Access
Abstract: In antiferromagnetic spintronics, the read-out of the staggered magnetization or Néel vector is the key obstacle to harnessing the ultra-fast dynamics and stability of antiferromagnets for novel devices. Here, we demonstrate strong exchange coupling of Mn2Au, a unique metallic antiferromagnet that exhibits Néel spin-orbit torques, with thin ferromagnetic Permalloy layers. This allows us to benefit from the well-established read-out methods of ferromagnets, while the essential advantages of antiferromagnetic spintronics are only slightly diminished. We show one-to-one imprinting of the antiferromagnetic on the ferromagnetic domain pattern. Conversely, alignment of the Permalloy magnetization reorients the Mn2Au Néel vector, an effect, which can be restricted to large magnetic fields by tuning the ferromagnetic layer thickness. To understand the origin of the strong coupling, we carry out high resolution electron microscopy imaging and we find that our growth yields an interface with a well-defined morphology that leads to the strong exchange coupling.
|
Nov 2021
|
|
I06-Nanoscience
|
Diamond Proposal Number(s):
[24373]
Open Access
Abstract: The remanent domain structures of composite element magnetic barcodes have been imaged using photo-emission electron microscopy with contrast from x-ray magnetic circular dichroism (XMCD-PEEM) and analysed with reference to the results of micromagnetic simulations. The magnetisation configuration at the end of wide strips is found to be perpendicular to the majority magnetisation direction. This transitions to an incomplete rotation for nominal strip widths below 300 nm and is found to affect the mechanics of magnetisation reversal for nominal strip widths below 200 nm, owing to a difference in magnetisation orientation when an external magnetic field is applied that is just smaller than the magnetic coercivity of the structures and a corresponding change in reversal dynamics. This change in domain structure as strip width decreases is consistent with both the influence of shape anisotropy and with measurements of magnetic hysteresis. The magnetisation reversal characteristics of composite element structures are found to be dependent on the relative magnetisation configurations of neighbouring strips, which in turn are found to vary stochastically upon the application and removal of a magnetic field along the easy axis of the structure. It is found that the application of a canted field is necessary to ensure sharp, consistent magnetisation reversal of bits when writing a binary code. These results confirm that either improved lithography of narrower strips or non-rectangular elements would be necessary to further increase the number of individually programmable bits in a barcode.
|
Sep 2021
|
|
I06-Nanoscience
|
C.
Schmitt
,
L.
Baldrati
,
L.
Sanchez-Tejerina
,
F.
Schreiber
,
A.
Ross
,
M.
Filianina
,
S.
Ding
,
F.
Fuhrmann
,
R.
Ramos
,
F.
Maccherozzi
,
D.
Backes
,
M.-A.
Mawass
,
F.
Kronast
,
S.
Valencia
,
E.
Saitoh
,
G.
Finocchio
,
M.
Klaui
Diamond Proposal Number(s):
[22448]
Abstract: Understanding the electrical manipulation of the antiferromagnetic order is a crucial aspect to enable the design of antiferromagnetic devices working at THz frequencies. Focusing on collinear insulating antiferromagnetic
Ni
O
/
Pt
thin films as a materials platform, we identify the crystallographic orientation of the domains that can be switched by currents and quantify the Néel-vector direction changes. We demonstrate electrical switching between different T domains by current pulses, finding that the Néel-vector orientation in these domains is along [
±
5
±
5
19], different compared to the bulk
⟨
112
⟩
directions. The final state of the in-plane component of the Néel vector
n
IP
after switching by current pulses
j
along the
[
1
±
1
0
]
directions is
n
IP
∥
j
. By comparing the observed Néel-vector orientation and the strain in the thin films, assuming that this variation arises solely from magnetoelastic effects, we quantify the order of magnitude of the magnetoelastic coupling coefficient as
b
0
+
2
b
1
=
3
×
10
7
J
/
m
3
. This information is key for the understanding of current-induced switching in antiferromagnets and for the design and use of such devices as active elements in spintronic devices.
|
Mar 2021
|
|
I06-Nanoscience
|
Diamond Proposal Number(s):
[23819]
Abstract: Tm
Fe
O
3
(TFO) is a canted antiferromagnet that undergoes a spin reorientation transition (SRT) with temperature between 82 and 94 K in single crystals. In this temperature region, the Néel vector continuously rotates from the crystallographic
c
axis (below 82 K) to the
a
axis (above 94 K). The SRT allows for a temperature control of distinct antiferromagnetic states without the need for a magnetic field, making it apt for applications working at terahertz frequencies. For device applications, thin films of TFO are required as well as an electrical technique for read-out of the magnetic state. Here, we demonstrate that orthorhombic TFO thin films can be grown by pulsed laser deposition and the detection of the SRT in TFO thin films can be accessed by making use of the all-electrical spin Hall magnetoresistance, in good agreement for the temperature range where the SRT occurs in bulk crystals. Our results demonstrate that one can electrically detect the SRT in insulators.
|
Jan 2021
|
|
I06-Nanoscience
|
Andrew
Ross
,
Romain
Lebrun
,
Lorenzo
Baldrati
,
Akashdeep
Kamra
,
Olena
Gomonay
,
Shilei
Ding
,
Felix
Schreiber
,
Dirk
Backes
,
Francesco
Maccherozzi
,
Daniel A.
Grave
,
Avner
Rothschild
,
Jairo
Sinova
,
Mathias
Klaui
Diamond Proposal Number(s):
[23819]
Abstract: We report room-temperature long-distance spin transport of magnons in antiferromagnetic thin-film hematite doped with Zn. The additional dopants significantly alter the magnetic anisotropies, resulting in a complex equilibrium spin structure that is capable of efficiently transporting spin angular momentum at room temperature without the need for a well-defined, pure easy-axis or easy-plane anisotropy. We find intrinsic magnon spin-diffusion lengths of up to 1.5 μm, and magnetic domain governed decay lengths of 175 nm for the low-frequency magnons, through electrical transport measurements demonstrating that the introduction of nonmagnetic dopants does not strongly reduce the transport length scale, showing that the magnetic damping of hematite is not significantly increased. We observe a complex field dependence of the nonlocal signal independent of the magnetic state visible, in the local magnetoresistance and direct magnetic imaging of the antiferromagnetic domain structure. We explain our results in terms of a varying and applied field-dependent ellipticity of the magnon modes reaching the detector electrode allowing us to tune the spin transport.
|
Dec 2020
|
|
I06-Nanoscience
|
Diamond Proposal Number(s):
[23748]
Open Access
Abstract: The emergence of thin film CoFeB has driven research and industrial applications in the past decades, with the magnetic random access memory (MRAM) the most prominent example. Because of its beneficial properties, it fulfills multiple functionalities as information-storing, spin-filtering, and reference layer in magnetic tunnel junctions. In future, this versatility can be exploited beyond the traditional applications of spintronics by combining with advanced materials, such as oxide-based materials. Pulsed laser deposition (PLD) is their predominant growth-method, and thus the compatibility of CoFeB with this growth technique will be tested here. This encompasses a comprehensive investigation of the structural and magnetic propoperties. In particular, we find a substantial 'dead' magnetic layer and confirm that it is caused by oxidation employing the x-ray magnetic circular dichroism (XMCD) effect. The low damping encountered in vector network analyzer-based ferromagnetic resonance (VNA-FMR) renders them suitable for magnonics applications. These findings demonstrate that CoFeB thin films are compatible with emergent, PLD-grown materials, ensuring their relevance for future applications.
|
Oct 2020
|
|
I06-Nanoscience
|
Thomas
Moore
,
Phillipe
Mohrke
,
Lutz
Heyne
,
Andreas
Kaldun
,
Mathias
Kläui
,
Dirk
Backes
,
Jan
Rhensius
,
Laura
Heyderman
,
Jan-ulrich
Thiele
,
Georg
Woltersdorf
,
Arantxa
Rodriguez
,
Frithjof
Nolting
,
Tevfik
Mentes
,
Miguel
Nino
,
Andrea
Locatelli
,
Alessandro
Potenza
,
Helder
Marchetto
,
Stuart
Cavill
,
Sarnjeet
Dhesi
Abstract: Domain wall (DW) depinning and motion in the viscous regime induced by magnetic fields, are investigated in planar permalloy nanowires in which the Gilbert damping is tuned in the range 0.008–0.26 by doping with Ho. Real time, spatially resolved magneto-optic Kerr effect measurements yield depinning field distributions and DW mobilities. Depinning occurs at discrete values of the field which are correlated with different metastable DW states and changed by the doping. For α<0.033, the DW mobilities are smaller than expected while for α>=0.033, there is agreement between the measured DW mobilities and those predicted by the standard one-dimensional model of field-induced DW motion. Micromagnetic simulations indicate that this is because as increases, the DW spin structure becomes increasingly rigid. Only when the damping is large can he DW be approximated as a pointlike quasiparticle that exhibits the simple translational motion predicted in the viscous regime. When the damping is small, the DW spin structure undergoes periodic distortions that lead to a velocity reduction. We therefore show that Ho doping of permalloy nanowires enables engineering of the DW depinning and mobility, as well as the extent of the viscous regime.
|
Sep 2010
|
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