I09-Surface and Interface Structural Analysis
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David A.
Duncan
,
Nicolae
Atodiresei
,
Simone
Lisi
,
Phil J.
Blowey
,
Vasile
Caciuc
,
James
Lawrence
,
Tien-lin
Lee
,
Maria Grazia
Betti
,
Pardeep Kumar
Thakur
,
Ada
Della Pia
,
Stefan
Blügel
,
Giovanni
Costantini
,
D. Phil
Woodruff
Diamond Proposal Number(s):
[13625]
Open Access
Abstract: Theoretical formulations capable of modeling chemical interactions over 3–4 orders of magnitude of bond strength, from covalent to van der Waals (vdW) forces, are one of the primary goals in materials physics, and chemistry. Development of vdW corrections for density-functional theory has thus been a major research field for two decades. While many of these corrections are semiempirical, more theoretically rigorous ab initio functionals have been developed. The ab initio functional vdW-DF2, when coupled with the reoptimized B86 exchange function (vdW-DF2-rB86), has typically performed as well, if not better than most semiempirical formulations. Here we present a system, Co intercalation of graphene on Ir(111), for which a semiempirical correction predicts local corrugation maxima in locations at which the vdW-DF2-rB86 functional predicts global minima. Sub-angstrom precision quantitative structural measurements show better agreement with the semiempirical correction. We posit that it is balancing the weak vdW interaction with the stronger, even covalent, interactions that proves a challenge for the vdW-DF2-rB86 functional.
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Dec 2019
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I09-Surface and Interface Structural Analysis
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Zachary W.
Lebens-higgins
,
David M.
Halat
,
Nicholas V.
Faenza
,
Matthew J.
Wahila
,
Manfred
Mascheck
,
Tomas
Wiell
,
Susanna K.
Eriksson
,
Paul
Palmgren
,
Jose
Rodriguez
,
Fadwa
Badway
,
Nathalie
Pereira
,
Glenn G.
Amatucci
,
Tien-lin
Lee
,
Clare P.
Grey
,
Louis F. J.
Piper
Diamond Proposal Number(s):
[22250, 22148]
Open Access
Abstract: Aluminum is a common dopant across oxide cathodes for improving the bulk and cathode-electrolyte interface (CEI) stability. Aluminum in the bulk is known to enhance structural and thermal stability, yet the exact influence of aluminum at the CEI remains unclear. To address this, we utilized a combination of X-ray photoelectron and absorption spectroscopy to identify aluminum surface environments and extent of transition metal reduction for Ni-rich LiNi0.8Co0.2−yAlyO2 (0%, 5%, or 20% Al) layered oxide cathodes tested at 4.75 V under thermal stress (60 °C). For these tests, we compared the conventional LiPF6 salt with the more thermally stable LiBF4 salt. The CEI layers are inherently different between these two electrolyte salts, particularly for the highest level of Al-doping (20%) where a thicker (thinner) CEI layer is found for LiPF6 (LiBF4). Focusing on the aluminum environment, we reveal the type of surface aluminum species are dependent on the electrolyte salt, as Al-O-F- and Al-F-like species form when using LiPF6 and LiBF4, respectively. In both cases, we find cathode-electrolyte reactions drive the formation of a protective Al-F-like barrier at the CEI in Al-doped oxide cathodes.
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Dec 2019
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I09-Surface and Interface Structural Analysis
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Abhinav
Prakash
,
Nicholas F.
Quackenbush
,
Hwanhui
Yun
,
Jacob T.
Held
,
Tianqi
Wang
,
Tristan
Truttmann
,
James M.
Ablett
,
Conan
Weiland
,
Tien-lin
Lee
,
Joseph C.
Woicik
,
K. Andre
Mkhoyan
,
Bharat
Jalan
Diamond Proposal Number(s):
[15845]
Abstract: Separating electrons from their source atoms in La-doped BaSnO3, the first perovskite oxide semiconductor to be discovered with high room-temperature electron mobility, remains a subject of great interest for achieving high-mobility electron gas in two dimensions. So far, the vast majority of work in perovskite oxides has focused on heterostructures involving SrTiO3 as an active layer. Here we report the demonstration of modulation doping in BaSnO3 as high room temperature mobility host without the use of SrTiO3. Significantly, we show the use of angle- resolved hard X-ray photoelectron spectroscopy (HAXPES) as a non-destructive approach to not only determine the location of electrons at the buried interface but also to quantify the width of electron distribution in BaSnO3. The transport results are in good agreement with the results of self-consistent solution to one-dimensional Poisson and Schrödinger equations. Finally, we discuss viable routes to engineer two-dimensional electron gas density through band-offset engineering.
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Nov 2019
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I09-Surface and Interface Structural Analysis
|
Diamond Proposal Number(s):
[12975]
Abstract: A combination of scanning tunneling microscopy, low-energy electron diffraction,and low-energy electron microscopy (LEEM) has been used to identify the structural phases formed by 7,7,8,8-tetracyanoquinodimethane (TCNQ) on Ag(111). These comprise a two-dimensional gas phase, a low-density commensurate (LDC) phase, and a higher-density incommensurate (HDI) phase. LEEM also shows the presence of an additional “precursor-HDI” phase with a surface unit mesh area only ≈3% less than the HDI phase. Normal incidence x-ray standing-wave measurements of the HDI phase yield almost identical structural parameters to the LDC phase for which a full structure determination has been previously reported. The results show TCNQ does not adopt the inverted bowl distortion favored in earlier density functional theory calculations of TCNQ on coinage metal surfaces, but the N atoms are twisted out of the molecular plane, an effect found for the LDC phase to be due to incorporation of Ag adatoms. The possible role of Ag adatoms in the HDI phase, and in the transition from the precursor-HDI phase, is discussed.
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Nov 2019
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Arian
Arab
,
Xiaoran
Liu
,
Okan
Koksal
,
Weibing
Yang
,
Ravini U.
Chandrasena
,
Srimanta
Middey
,
Mikhail
Kareev
,
Siddharth
Kumar
,
Marius-adrian
Husanu
,
Zhenzhong
Yang
,
Lin
Gu
,
Vladimir N.
Strocov
,
Tien-lin
Lee
,
Jan
Minar
,
Rossitza
Pentcheva
,
Jak
Chakhalian
,
Alexander X.
Gray
Abstract: Artificial complex-oxide heterostructures containing ultrathin buried layers grown along the pseudocubic [111] direction have been predicted to host a plethora of exotic quantum states arising from the graphene-like lattice geometry and the interplay between strong electronic correlations and band topology. To date, however, electronic-structural investigations of such atomic layers remain an immense challenge due to the shortcomings of conventional surface-sensitive probes, with typical information depths of a few Ångstroms. Here, we use a combination of bulk-sensitive soft x-ray angle-resolved photoelectron spectroscopy (SX-ARPES), hard x-ray photoelectron spectroscopy (HAXPES) and state-of-the-art first-principles calculations to demonstrate a direct and robust method for extracting momentum-resolved and angle-integrated valence-band electronic structure of an ultrathin buckled graphene-like layer of NdNiO3 confined between two 4-unit cell-thick layers of insulating LaAlO3. The momentum-resolved dispersion of the buried Ni d states near the Fermi level obtained via SX-ARPES is in excellent agreement with the first-principles calculations and establishes the realization of an antiferro-orbital order in this artificial lattice. The HAXPES measurements reveal the presence of a valence-band (VB) bandgap of 265 meV. Our findings open a promising avenue for designing and investigating quantum states of matter with exotic order and topology in a few buried layers.
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Oct 2019
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I09-Surface and Interface Structural Analysis
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Diamond Proposal Number(s):
[19524]
Abstract: Delafossite CuFeO2 photocathodes have recently attracted attention for water splitting due to their suitable band gap (∼1.5 eV) and high stability in aqueous media. The preparation of CuFeO2 usually requires long and energy‐intense treatments in an inert atmosphere for the full conversion of spinel CuFe2O4 to delafossite CuFeO2. Herein, we report the preparation and characterization of highly uniform and stable CuFeO2 thin films obtained via a combination of inexpensive ultrasonic spray pyrolysis followed by a short hybrid microwave treatment (∼4 min). The resulting films show good stability in alkaline media and produce a photocurrent of ∼650 μA/cm2 under 1.5 AM simulated sunlight and with oxygen bubbling. The effect of the rapid transformation from the spinel to the delafossite phase induced by hybrid microwave annealing was investigated with synchrotron‐based X‐ray absorption spectroscopy (XAS) and X‐ray photoelectron spectroscopy (XPS).
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Sep 2019
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I09-Surface and Interface Structural Analysis
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X. C.
Huang
,
J. Y.
Zhang
,
M.
Wu
,
S.
Zhang
,
H. Y.
Xiao
,
W. Q.
Han
,
T.-l.
Lee
,
A.
Tadich
,
D.-c.
Qi
,
L.
Qiao
,
L.
Chen
,
K. H. L.
Zhang
Diamond Proposal Number(s):
[21432]
Abstract: This work reports a fundamental study on the electronic structure, optical properties, and defect chemistry of a series of Co-based spinel oxide (
Co
3
O
4
,
ZnCo
2
O
4
, and
CoAl
2
O
4
) epitaxial thin films using x-ray photoemission and absorption spectroscopies, optical spectroscopy, transport measurements, and density functional theory. We demonstrate that
ZnCo
2
O
4
has a fundamental bandgap of 1.3 eV, much smaller than the generally accepted values, which range from 2.26 to 2.8 eV. The valence band edge mainly consists of occupied
Co
3
d
t
6
2
g
with some hybridization with O
2
p
/Zn
3
d
, and the conduction band edge of unoccupied
e
∗
g
state. However, optical transition between the two band edges is dipole forbidden. Strong absorption occurs at photon energies above 2.6 eV, explaining the reasonable transparency of
ZnCo
2
O
4
. A detailed defect chemistry study indicates that Zn vacancies formed at high oxygen pressure are the origin of a high
p
-type conductivity of
ZnCo
2
O
4
, and the hole conduction mechanism is described by small-polaron hoping model. The high
p
-type conductivity, reasonable transparency, and large work function make
ZnCo
2
O
4
a desirable
p
-type transparent semiconductor for various optoelectronic applications. Using the same method, the bandgap of
Co
3
O
4
is further proved to be ∼0.8 eV arising from the tetrahedrally coordinated
Co
2
+
cations. Our work advances the fundamental understanding of these materials and provides significant guidance for their use in catalysis, electronic, and solar applications.
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Sep 2019
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I09-Surface and Interface Structural Analysis
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Abstract: The electronic properties of
CaCuO
2
/
La
0.7
Sr
0.3
MnO
3
(LSMO) superlattices are determined by the electronic structure of the structural units and in particular their interfaces. The electronic structure of LSMO is governed by a metal-insulator transition, which is controlled by the thickness of the units and the sample temperature, resulting in a systematic downward band shift for metallic samples (i.e., thick LSMO units, low temperature). We present a systematic study of the changes in the valence-band structure and screening features in Mn
2
p
and Cu
2
p
core-level spectra. The results show that hybridization of Cu
3
d
orbitals with out-of-plane O
2
p
orbitals can be systematically tuned by controlling the band alignment at the interface via the metal-to-insulator transition of the LSMO units. This opens a new route to rational design of functional interfaces and control of orbital reconstructions.
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Sep 2019
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I09-Surface and Interface Structural Analysis
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Jack E. N.
Swallow
,
Benjamin A. D.
Williamson
,
Sanjayan
Sathasivam
,
Max
Birkett
,
Thomas J.
Featherstone
,
Philip A. E.
Murgatroyd
,
Holly J.
Edwards
,
Zachary W.
Lebens-higgins
,
David A.
Duncan
,
Mark
Farnworth
,
Paul
Warren
,
Nianhua
Peng
,
Tien-lin
Lee
,
Louis F. J.
Piper
,
Anna
Regoutz
,
Claire J.
Carmalt
,
Ivan P.
Parkin
,
Vin R.
Dhanak
,
David O.
Scanlon
,
Tim D.
Veal
Diamond Proposal Number(s):
[18428]
Open Access
Abstract: Transparent conductors are a vital component of smartphones, touch-enabled displays, low emissivity windows and thin film photovoltaics. Tin-doped In2O3 (ITO) dominates the transparent conductive films market, accounting for the majority of the current multi-billion dollar annual global sales. Due to the high cost of indium, however, alternatives to ITO have been sought but have inferior properties. Here we demonstrate that molybdenum-doped In2O3 (IMO) has higher mobility and therefore higher conductivity than ITO with the same carrier density. This also results in IMO having increased infrared transparency compared to ITO of the same conductivity. These properties enable current performance to be achieved using thinner films, reducing the amount of indium required and raw material costs by half. The enhanced doping behavior arises from Mo 4d donor states being resonant high in the conduction band and negligibly perturbing the host conduction band minimum, in contrast to the adverse perturbation caused by Sn 5s dopant states. This new understanding will enable better and cheaper TCOs based on both In2O3 and other metal oxides.
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Sep 2019
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I09-Surface and Interface Structural Analysis
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Diamond Proposal Number(s):
[21432]
Abstract: This work reports a systematical study on the relationship of electronic structure to oxygen evolution reaction (OER) activity of NixCo3-xO4 (x=0-1) mixed oxides. The specific OER activity is substantially increased by 16 times from 0.02 mA cm-2BET for pure Co3O4 to 0.32 mA cm-2BET for x=1 at an overpotential of 0.4 V and exhibits a strong correlation with the amount of Ni ions in +3 oxidation state. X-ray spectroscopic study reveals that inclusion of Ni3+ ions upshifts the occupied valence band maximum (VBM) by 0.27 eV toward the Fermi level (EF), and creates a new hole (unoccupied) state located ~1 eV above the EF. Such electronic features favour the adsorption of OH surface intermediates on NixCo3-xO4, resulting in enhanced OER. Furthermore, the emerging hole state effectively reduces the energy barrier for electron transfer from 1.19 eV to 0.39 eV, and thereby improves the kinetics for OER. The electronic structure features that lead to a higher OER in NixCo3-xO4 can be extended to other transition metal oxides for rational design of highly active catalysts.
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Aug 2019
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