I09-Surface and Interface Structural Analysis
|
Diamond Proposal Number(s):
[21432]
Abstract: This work reports a systematical study on the relationship of electronic structure to oxygen evolution reaction (OER) activity of NixCo3-xO4 (x=0-1) mixed oxides. The specific OER activity is substantially increased by 16 times from 0.02 mA cm-2BET for pure Co3O4 to 0.32 mA cm-2BET for x=1 at an overpotential of 0.4 V and exhibits a strong correlation with the amount of Ni ions in +3 oxidation state. X-ray spectroscopic study reveals that inclusion of Ni3+ ions upshifts the occupied valence band maximum (VBM) by 0.27 eV toward the Fermi level (EF), and creates a new hole (unoccupied) state located ~1 eV above the EF. Such electronic features favour the adsorption of OH surface intermediates on NixCo3-xO4, resulting in enhanced OER. Furthermore, the emerging hole state effectively reduces the energy barrier for electron transfer from 1.19 eV to 0.39 eV, and thereby improves the kinetics for OER. The electronic structure features that lead to a higher OER in NixCo3-xO4 can be extended to other transition metal oxides for rational design of highly active catalysts.
|
Aug 2019
|
|
I09-Surface and Interface Structural Analysis
|
Diamond Proposal Number(s):
[16005]
Abstract: Zn
M
I
I
I
2
O
4
(
M
I
I
I
=
Co
, Rh, Ir) spinels have been recently identified as promising
p
-type semiconductors for transparent electronics. However, discrepancies exist in the literature regarding their fundamental optoelectronic properties. In this paper, the electronic structures of these spinels are directly investigated using soft/hard x-ray photoelectron and x-ray absorption spectroscopies in conjunction with density functional theory calculations. In contrast to previous results,
ZnCo
2
O
4
is found to have a small electronic band gap with forbidden optical transitions between the true band edges, allowing for both bipolar doping and high optical transparency. Furthermore, increased
d
−
d
splitting combined with a concomitant lowering of Zn
s
/
p
conduction states is found to result in a
ZnCo
2
O
4
(
ZCO
)
<
ZnRh
2
O
4
(
ZRO
)
≈
ZnIr
2
O
4
(
ZIO
)
band gap trend, finally resolving long-standing discrepancies in the literature.
|
Aug 2019
|
|
I09-Surface and Interface Structural Analysis
|
Sebastian A.
Howard
,
Christopher N.
Singh
,
Galo J.
Paez
,
Matthew
Wahila
,
Linda W.
Wangoh
,
Shawn
Sallis
,
Keith
Tirpak
,
Yufeng
Liang
,
David
Prendergast
,
Mateusz
Zuba
,
Jatinkumar
Rana
,
Alex
Weidenbach
,
Timothy M.
Mccrone
,
Wanli
Yang
,
Tien-lin
Lee
,
Fanny
Rodolakis
,
William
Doolittle
,
Wei-cheng
Lee
,
Louis F. J.
Piper
Diamond Proposal Number(s):
[20647]
Open Access
Abstract: The discovery of analog LixNbO2 memristors revealed a promising new memristive mechanism wherein the diffusion of Li+ rather than O2− ions enables precise control of the resistive states. However, directly correlating lithium concentration with changes to the electronic structure in active layers remains a challenge and is required to truly understand the underlying physics. Chemically delithiated single crystals of LiNbO2 present a model system for correlating lithium variation with spectroscopic signatures from operando soft x-ray spectroscopy studies of device active layers. Using electronic structure modeling of the x-ray spectroscopy of LixNbO2 single crystals, we demonstrate that the intrinsic memristive behavior in LixNbO2 active layers results from field-induced degenerate p-type doping. We show that electrical operation of LixNbO2-based memristors is viable even at marginal Li deficiency and that the analog memristive switching occurs well before the system is fully metallic. This study serves as a benchmark for material synthesis and characterization of future LixNbO2-based memristor devices and suggests that valence change switching is a scalable alternative that circumvents the electroforming typically required for filamentary-based memristors.
|
Jul 2019
|
|
I09-Surface and Interface Structural Analysis
|
Z. H.
Lim
,
N. F.
Quackenbush
,
A. N.
Penn
,
M.
Chrysler
,
M.
Bowden
,
Z.
Zhu
,
J. M.
Ablett
,
T.-l.
Lee
,
J. M.
Lebeau
,
J. C.
Woicik
,
P. V.
Sushko
,
S. A.
Chambers
,
J. H.
Ngai
Diamond Proposal Number(s):
[17449]
Abstract: We report charge transfer and built-in electric fields across the epitaxial
SrNb
x
Ti
1
−
x
O
3
−
δ
/
Si
(
001
)
interface. Electrical transport measurements indicate the formation of a hole gas in the Si and the presence of built-in fields. Hard x-ray photoelectron measurements reveal pronounced asymmetries in core-level spectra that arise from these built-in fields. Theoretical analysis of core-level spectra enables built-in fields and the resulting band bending to be spatially mapped across the heterojunction. The demonstration of tunable charge transfer, built-in fields, and the spatial mapping of the latter, lays the groundwork for the development of electrically coupled, functional heterojunctions.
|
Jul 2019
|
|
I09-Surface and Interface Structural Analysis
|
Matthew J.
Wahila
,
Galo
Paez
,
Christopher N.
Singh
,
Anna
Regoutz
,
Shawn
Sallis
,
Mateusz J.
Zuba
,
Jatinkumar
Rana
,
M. Brooks
Tellekamp
,
Jos E.
Boschker
,
Toni
Markurt
,
Jack E. N.
Swallow
,
Leanne A. H.
Jones
,
Tim D.
Veal
,
Wanli
Yang
,
Tien-lin
Lee
,
Fanny
Rodolakis
,
Jerzy T.
Sadowski
,
David
Prendergast
,
Wei-cheng
Lee
,
W. Alan
Doolittle
,
Louis F. J.
Piper
Diamond Proposal Number(s):
[20647, 21430]
Abstract: The metal-insulator transition of
NbO
2
is thought to be important for the functioning of recent niobium oxide-based memristor devices, and is often described as a Mott transition in these contexts. However, the actual transition mechanism remains unclear, as current devices actually employ electroformed
NbO
x
that may be inherently different to crystalline
NbO
2
. We report on our synchrotron x-ray spectroscopy and density-functional-theory study of crystalline, epitaxial
NbO
2
thin films grown by pulsed laser deposition and molecular beam epitaxy across the metal-insulator transition at
∼
810
∘
C
. The observed spectral changes reveal a second-order Peierls transition driven by a weakening of Nb dimerization without significant electron correlations, further supported by our density-functional-theory modeling. Our findings indicate that employing crystalline
NbO
2
as an active layer in memristor devices may facilitate analog control of the resistivity, whereby Joule-heating can modulate Nb-Nb dimer distance and consequently control the opening of a pseudogap.
|
Jul 2019
|
|
I09-Surface and Interface Structural Analysis
|
Tomáš
Rauch
,
Victor A.
Rogalev
,
Maximilian
Bauernfeind
,
Julian
Maklar
,
Felix
Reis
,
Florian
Adler
,
Simon
Moser
,
Johannes
Weis
,
Tien-lin
Lee
,
Pardeep K.
Thakur
,
Jörg
Schäfer
,
Ralph
Claessen
,
Jürgen
Henk
,
Ingrid
Mertig
Diamond Proposal Number(s):
[19512]
Abstract: The diamond and zinc-blende semiconductors are well-known and have been widely studied for decades. Yet, their electronic structure still surprises with unexpected topological properties of the valence bands. In this joint theoretical and experimental investigation, we demonstrate for the benchmark compounds InSb and GaAs that the electronic structure features topological surface states below the Fermi energy. Our parity analysis shows that the spin-orbit split-off band near the valence band maximum exhibits a strong topologically nontrivial behavior characterized by the
Z
2
invariants
(
1
;
000
)
. The nontrivial character is a consequence of the nonzero spin-orbit coupling and is imposed by the chosen constituents, in contrast to the conventional topological phase transition mechanism which relies on tuning parameters in the system Hamiltonian. Ab initio-based tight-binding calculations resolve topological surface states in the occupied electronic structure of InSb and GaAs, further confirmed experimentally by soft x-ray angle-resolved photoemission from both materials. Our findings are valid for all other materials whose valence bands are adiabatically linked to those of InSb, i.e., many diamond and zinc-blende semiconductors, as well as other related materials, such as half-Heusler compounds.
|
Jun 2019
|
|
I09-Surface and Interface Structural Analysis
|
Anders L.
Jørgensen
,
David A.
Duncan
,
Claus F. P.
Kastorp
,
Line
Kyhl
,
Zeyuan
Tang
,
Albert
Bruix
,
Mie
Andersen
,
Bjork
Hammer
,
Tien-lin
Lee
,
Liv
Hornekaer
,
Richard
Balog
Diamond Proposal Number(s):
[16243]
Abstract: Functionalization of graphene on Ir(111) is a promising route to modify graphene by chemical means in a controlled fashion at the nanoscale. Yet, the nature of such functionalized sp3 nanodots remains unknown. Density functional theory (DFT) calculations alone cannot differentiate between two plausible structures, namely true graphane and substrate stabilized graphane-like nanodots. These two structures, however, interact dramatically differently with the underlying substrate. Discriminating which type of nanodots forms on the surface is thus of paramount importance for the applications of such prepared nanostructures. By comparing X-ray standing wave measurements against theoretical model structures obtained by DFT calculations we are able to exclude the formation of true graphane nanodots and clearly show the formation graphane-like nanodots.
|
Jun 2019
|
|
I09-Surface and Interface Structural Analysis
|
Diamond Proposal Number(s):
[9012, 12558]
Abstract: We study the effect of alkali metal intercalation (Cs and Li) on the geometry of graphene on Ir(111) using the x-ray standing waves technique. For both alkali metals, the increase in the mean height of the carbon layer does not depend on the lateral structure or the density of the intercalated layer. For Li, full delamination of graphene from the metal substrate is found already for a small amount of intercalant. Even though Lithium lifts graphene to a smaller height, it is much more efficient in ironing out the corrugation of pristine graphene on Ir(111).
|
May 2019
|
|
I09-Surface and Interface Structural Analysis
|
Anna
Regoutz
,
Alex M.
Ganose
,
Lars
Blumenthal
,
Christoph
Schlueter
,
Tien-lin
Lee
,
Gregor
Kieslich
,
Anthony K.
Cheetham
,
Gwilherm
Kerherve
,
Ying-sheng
Huang
,
Ruei-san
Chen
,
Giovanni
Vinai
,
Tommaso
Pincelli
,
Giancarlo
Panaccione
,
Kelvin H. L.
Zhang
,
Russell G.
Egdell
,
Johannes
Lischner
,
David O.
Scanlon
,
David J.
Payne
Diamond Proposal Number(s):
[12673]
Abstract: Theory and experiment are combined to gain an understanding of the electronic properties of OsO2, a poorly studied metallic oxide that crystallizes in the rutile structure. Hard and soft valence-band x-ray photoemission spectra of OsO2 single crystals are in broad agreement with the results of density-functional-theory calculations, aside from a feature shifted to high binding energy of the conduction band. The energy shift corresponds to the conduction electron plasmon energy measured by reflection electron energy loss spectroscopy. The plasmon satellite is reproduced by many-body perturbation theory.
|
Feb 2019
|
|
I09-Surface and Interface Structural Analysis
|
Wei-cheng
Lee
,
Matthew
Wahila
,
Shantanu
Mukherjee
,
Christopher N.
Singh
,
Tyler
Eustance
,
Anna
Regoutz
,
Hanjong
Paik
,
Jos E.
Boschker
,
Fanny
Rodolakis
,
Tien-lin
Lee
,
Darrell G.
Schlom
,
Louis F. J.
Piper
Diamond Proposal Number(s):
[20647, 21430]
Open Access
Abstract: We investigate the electronic structure of epitaxial VO
2
2
films in the rutile phase using density functional theory combined with the slave-spin method (DFT + SS). In DFT + SS, multi-orbital Hubbard interactions are added to a DFT-fit tight-binding model, and slave spins are used to treat electron correlations. We find that while stretching the system along the rutile
c
c
-axis results in a band structure favoring anisotropic orbital fillings, electron correlations favor equal filling of the
t
2g
t2g
orbitals. These two distinct effects cooperatively induce an orbital-dependent redistribution of the electron occupations and spectral weights, driving strained VO
2
2
toward an orbital selective Mott transition (OSMT). The simulated single-particle spectral functions are directly compared to V L-edge resonant X-ray photoemission spectroscopy of epitaxial 10 nm VO
2
2
/TiO
2
2
(001) and (100) strain orientations. Excellent agreement is observed between the simulations and experimental data regarding the strain-induced evolution of the lower Hubbard band. Simulations of rutile NbO
2
2
under similar strain conditions are performed, and we predict that an OSMT will not occur in rutile NbO
2
2
. Our prediction is supported by the high-temperature hard x-ray photoelectron spectroscopy measurement on relaxed NbO
2
2
(110) thin films with no trace of the lower Hubbard band. Our results indicate that electron correlations in VO
2
2
are important and can be modulated even in the rutile phase before the Peierls instability sets in.
|
Feb 2019
|
|
