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Instruments / Technical Area	Publication Details	Published	Actions
I09-Surface and Interface Structural Analysis	Quantifying the critical thickness of electron hybridization in spintronics materials T. Pincelli , V. Lollobrigida , F. Borgatti , A. Regoutz , B. Gobaut , C. Schlueter , T.-L. Lee , D. J. Payne , M. Oura , K. Tamasaku , A. Y. Petrov , P. Graziosi , F. Miletto Granozio , M. Cavallini , G. Vinai , R. Ciprian , C. Back , G. Rossi , M. Taguchi , H. Daimon , G. Van Der Laan , G. Panaccione Nature Communications 8 DOI: 10.1038/ncomms16051 Diamond Proposal Number(s): [11322] Show Abstract ▼ Abstract: In the rapidly growing ﬁeld of spintronics, simultaneous control of electronic and magneticproperties is essential, and the perspective of building novel phases is directly linked to the control of tuning parameters, for example, thickness and doping. Looking at the relevanteffects in interface-driven spintronics, the reduced symmetry at a surface and interface corresponds to a severe modiﬁcation of the overlap of electron orbitals, that is, to a change of electron hybridization. Here we report a chemically and magnetically sensitive depth-dependent analysis of two paradigmatic systems, namely La1xSrxMnO3 and (Ga,Mn)As. Supported by cluster calculations, we ﬁnd a crossover between surface and bulk in the electron hybridization/correlation and we identify a spectroscopic ﬁngerprint of bulk metallic character and ferromagnetism versus depth. The critical thickness and the gradient of hybridization are measured, setting an intrinsic limit of 3 and 10 unit cells from the surface,respectively, for (Ga,Mn)As and La1xSrxMnO3, for fully restoring bulk properties.	Jul 2017
I09-Surface and Interface Structural Analysis	Role and optimization of the active oxide layer in TiO2-based RRAM Anna Regoutz , Isha Gupta , Alexantrou Serb , Ali Khiat , Francesco Borgatti , Tien-Lin Lee , Christoph Schlueter , Piero Torelli , Benoit Gobaut , Mark Light , Daniela Carta , Stuart Pearce , Giancarlo Panaccione , Themistoklis Prodromakis Advanced Functional Materials 26 (4), 507 - 513 DOI: 10.1002/adfm.201503522 Diamond Proposal Number(s): [0240] Open Access Show Abstract ▼ Abstract: TiO2 is commonly used as the active switching layer in resistive random access memory. The electrical characteristics of these devices are directly related to the fundamental conditions inside the TiO2 layer and at the interfaces between it and the surrounding electrodes. However, it is complex to disentangle the effects of film “bulk” properties and interface phenomena. The present work uses hard X-ray photoemission spectroscopy (HAXPES) at different excitation energies to distinguish between these regimes. Changes are found to affect the entire thin film, but the most dramatic effects are confined to an interface. These changes are connected to oxygen ions moving and redistributing within the film. Based on the HAXPES results, post-deposition annealing of the TiO2 thin film was investigated as an optimisation pathway in order to reach an ideal compromise between device resistivity and lifetime. The structural and chemical changes upon annealing are investigated using X-ray absorption spectroscopy and are further supported by a range of bulk and surface sensitive characterisation methods. In summary, it is shown that the management of oxygen content and interface quality is intrinsically important to device behavior and that careful annealing procedures are a powerful device optimisation technique.	Jan 2016

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