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I15-Extreme Conditions	Structural and electrical study of the topological insulator SnBi2Te4 at high pressure R. Vilaplana , Juan Angel Sans Tresserras , F.j. Manjón , A. Andrada-Chacón , J. Sánchez-Benítez , Catalin Popescu , Oscar Gomis , André Luis De Jesus Pereira , Braulio Garcia Domene , P. Rodríguez-Hernández , A. Muñoz , Dominik Daisenberger , O. Oeckler Journal Of Alloys And Compounds 685, 962 - 970 DOI: 10.1016/j.jallcom.2016.06.170 Diamond Proposal Number(s): [9102] Show Abstract ▼ Abstract: We report high-pressure X-ray diffraction and electrical measurements of the topological insulator SnBi2Te4 at room temperature. The pressure dependence of the structural properties of the most stable phase of SnBi2Te4 at ambient conditions (trigonal phase) have been experimentally determined and compared with results of our ab initio calculations. Furthermore, a comparison of SnBi2Te4 with the parent compound Bi2Te3 shows that the central TeSnTe trilayer, which substitutes the Te layer at the center of the TeBiTeBiTe layers of Bi2Te3, plays a minor role in the compression of SnBi2Te4. Similar to Bi2Te3, our resistance measurements and electronic band structure simulations in SnBi2Te4 at high pressure suggest that this compound exhibits a pressure-induced electronic topological transition or Lifshitz transition between 3.5 and 5.0 GPa.	Nov 2016

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