I09-Surface and Interface Structural Analysis
|
Galo J.
Paez
,
Christopher N.
Singh
,
Matthew J.
Wahila
,
Keith E.
Tirpak
,
Nicholas F.
Quackenbush
,
Shawn
Sallis
,
Hanjong
Paik
,
Yufeng
Liang
,
Darrell G.
Schlom
,
Tien-Lin
Lee
,
Christoph
Schlueter
,
Wei-Cheng
Lee
,
Louis F. J.
Piper
Diamond Proposal Number(s):
[13812, 25355]
Abstract: Recent reports have identified new metaphases of
VO
2
with strain and/or doping, suggesting the structural phase transition and the metal-to-insulator transition might be decoupled. Using epitaxially strained
VO
2
/
Ti
O
2
(001) thin films, which display a bulklike abrupt metal-to-insulator transition and rutile to monoclinic transition structural phase transition, we employ x-ray standing waves combined with hard x-ray photoelectron spectroscopy to simultaneously measure the structural and electronic transitions. This x-ray standing waves study elegantly demonstrates the structural and electronic transitions occur concurrently within experimental limits (±1K).
|
May 2020
|
|
I09-Surface and Interface Structural Analysis
|
Zachary W.
Lebens-Higgins
,
David M.
Halat
,
Nicholas V.
Faenza
,
Matthew J.
Wahila
,
Manfred
Mascheck
,
Tomas
Wiell
,
Susanna K.
Eriksson
,
Paul
Palmgren
,
Jose
Rodriguez
,
Fadwa
Badway
,
Nathalie
Pereira
,
Glenn G.
Amatucci
,
Tien-Lin
Lee
,
Clare P.
Grey
,
Louis F. J.
Piper
Diamond Proposal Number(s):
[22250, 22148]
Open Access
Abstract: Aluminum is a common dopant across oxide cathodes for improving the bulk and cathode-electrolyte interface (CEI) stability. Aluminum in the bulk is known to enhance structural and thermal stability, yet the exact influence of aluminum at the CEI remains unclear. To address this, we utilized a combination of X-ray photoelectron and absorption spectroscopy to identify aluminum surface environments and extent of transition metal reduction for Ni-rich LiNi0.8Co0.2−yAlyO2 (0%, 5%, or 20% Al) layered oxide cathodes tested at 4.75 V under thermal stress (60 °C). For these tests, we compared the conventional LiPF6 salt with the more thermally stable LiBF4 salt. The CEI layers are inherently different between these two electrolyte salts, particularly for the highest level of Al-doping (20%) where a thicker (thinner) CEI layer is found for LiPF6 (LiBF4). Focusing on the aluminum environment, we reveal the type of surface aluminum species are dependent on the electrolyte salt, as Al-O-F- and Al-F-like species form when using LiPF6 and LiBF4, respectively. In both cases, we find cathode-electrolyte reactions drive the formation of a protective Al-F-like barrier at the CEI in Al-doped oxide cathodes.
|
Dec 2019
|
|
I09-Surface and Interface Structural Analysis
|
Diamond Proposal Number(s):
[16005]
Abstract: Zn
M
I
I
I
2
O
4
(
M
I
I
I
=
Co
, Rh, Ir) spinels have been recently identified as promising
p
-type semiconductors for transparent electronics. However, discrepancies exist in the literature regarding their fundamental optoelectronic properties. In this paper, the electronic structures of these spinels are directly investigated using soft/hard x-ray photoelectron and x-ray absorption spectroscopies in conjunction with density functional theory calculations. In contrast to previous results,
ZnCo
2
O
4
is found to have a small electronic band gap with forbidden optical transitions between the true band edges, allowing for both bipolar doping and high optical transparency. Furthermore, increased
d
−
d
splitting combined with a concomitant lowering of Zn
s
/
p
conduction states is found to result in a
ZnCo
2
O
4
(
ZCO
)
<
ZnRh
2
O
4
(
ZRO
)
≈
ZnIr
2
O
4
(
ZIO
)
band gap trend, finally resolving long-standing discrepancies in the literature.
|
Aug 2019
|
|
I09-Surface and Interface Structural Analysis
|
Sebastian A.
Howard
,
Christopher N.
Singh
,
Galo J.
Paez
,
Matthew
Wahila
,
Linda W.
Wangoh
,
Shawn
Sallis
,
Keith
Tirpak
,
Yufeng
Liang
,
David
Prendergast
,
Mateusz
Zuba
,
Jatinkumar
Rana
,
Alex
Weidenbach
,
Timothy M.
Mccrone
,
Wanli
Yang
,
Tien-Lin
Lee
,
Fanny
Rodolakis
,
William
Doolittle
,
Wei-Cheng
Lee
,
Louis F. J.
Piper
Diamond Proposal Number(s):
[20647]
Open Access
Abstract: The discovery of analog LixNbO2 memristors revealed a promising new memristive mechanism wherein the diffusion of Li+ rather than O2− ions enables precise control of the resistive states. However, directly correlating lithium concentration with changes to the electronic structure in active layers remains a challenge and is required to truly understand the underlying physics. Chemically delithiated single crystals of LiNbO2 present a model system for correlating lithium variation with spectroscopic signatures from operando soft x-ray spectroscopy studies of device active layers. Using electronic structure modeling of the x-ray spectroscopy of LixNbO2 single crystals, we demonstrate that the intrinsic memristive behavior in LixNbO2 active layers results from field-induced degenerate p-type doping. We show that electrical operation of LixNbO2-based memristors is viable even at marginal Li deficiency and that the analog memristive switching occurs well before the system is fully metallic. This study serves as a benchmark for material synthesis and characterization of future LixNbO2-based memristor devices and suggests that valence change switching is a scalable alternative that circumvents the electroforming typically required for filamentary-based memristors.
|
Jul 2019
|
|
I09-Surface and Interface Structural Analysis
|
Matthew J.
Wahila
,
Galo
Paez
,
Christopher N.
Singh
,
Anna
Regoutz
,
Shawn
Sallis
,
Mateusz J.
Zuba
,
Jatinkumar
Rana
,
M. Brooks
Tellekamp
,
Jos E.
Boschker
,
Toni
Markurt
,
Jack E. N.
Swallow
,
Leanne A. H.
Jones
,
Tim D.
Veal
,
Wanli
Yang
,
Tien-Lin
Lee
,
Fanny
Rodolakis
,
Jerzy T.
Sadowski
,
David
Prendergast
,
Wei-Cheng
Lee
,
W. Alan
Doolittle
,
Louis F. J.
Piper
Diamond Proposal Number(s):
[20647, 21430]
Abstract: The metal-insulator transition of
NbO
2
is thought to be important for the functioning of recent niobium oxide-based memristor devices, and is often described as a Mott transition in these contexts. However, the actual transition mechanism remains unclear, as current devices actually employ electroformed
NbO
x
that may be inherently different to crystalline
NbO
2
. We report on our synchrotron x-ray spectroscopy and density-functional-theory study of crystalline, epitaxial
NbO
2
thin films grown by pulsed laser deposition and molecular beam epitaxy across the metal-insulator transition at
∼
810
∘
C
. The observed spectral changes reveal a second-order Peierls transition driven by a weakening of Nb dimerization without significant electron correlations, further supported by our density-functional-theory modeling. Our findings indicate that employing crystalline
NbO
2
as an active layer in memristor devices may facilitate analog control of the resistivity, whereby Joule-heating can modulate Nb-Nb dimer distance and consequently control the opening of a pseudogap.
|
Jul 2019
|
|
I09-Surface and Interface Structural Analysis
|
Wei-Cheng
Lee
,
Matthew
Wahila
,
Shantanu
Mukherjee
,
Christopher N.
Singh
,
Tyler
Eustance
,
Anna
Regoutz
,
Hanjong
Paik
,
Jos E.
Boschker
,
Fanny
Rodolakis
,
Tien-Lin
Lee
,
Darrell G.
Schlom
,
Louis F. J.
Piper
Diamond Proposal Number(s):
[20647, 21430]
Abstract: We investigate the electronic structure of epitaxial VO
2
2
films in the rutile phase using density functional theory combined with the slave-spin method (DFT + SS). In DFT + SS, multi-orbital Hubbard interactions are added to a DFT-fit tight-binding model, and slave spins are used to treat electron correlations. We find that while stretching the system along the rutile
c
c
-axis results in a band structure favoring anisotropic orbital fillings, electron correlations favor equal filling of the
t
2g
t2g
orbitals. These two distinct effects cooperatively induce an orbital-dependent redistribution of the electron occupations and spectral weights, driving strained VO
2
2
toward an orbital selective Mott transition (OSMT). The simulated single-particle spectral functions are directly compared to V L-edge resonant X-ray photoemission spectroscopy of epitaxial 10 nm VO
2
2
/TiO
2
2
(001) and (100) strain orientations. Excellent agreement is observed between the simulations and experimental data regarding the strain-induced evolution of the lower Hubbard band. Simulations of rutile NbO
2
2
under similar strain conditions are performed, and we predict that an OSMT will not occur in rutile NbO
2
2
. Our prediction is supported by the high-temperature hard x-ray photoelectron spectroscopy measurement on relaxed NbO
2
2
(110) thin films with no trace of the lower Hubbard band. Our results indicate that electron correlations in VO
2
2
are important and can be modulated even in the rutile phase before the Peierls instability sets in.
|
Feb 2019
|
|
I09-Surface and Interface Structural Analysis
|
Diamond Proposal Number(s):
[16005]
Open Access
Abstract: Metal-Nb2O5−x-metal memdiodes exhibiting rectification, hysteresis, and capacitance are demonstrated for applications in neuromorphic circuitry. These devices do not require any post-fabrication treatments such as filament creation by electroforming that would impede circuit scalability. Instead these devices operate due to Poole-Frenkel defect controlled transport where the high defect density is inherent to the Nb2O5−x deposition rather than post-fabrication treatments. Temperature dependent measurements reveal that the dominant trap energy is 0.22 eV suggesting it results from the oxygen deficiencies in the amorphous Nb2O5−x. Rectification occurs due to a transition from thermionic emission to tunneling current and is present even in thick devices (>100 nm) due to charge trapping which controls the tunneling distance. The turn-on voltage is linearly proportional to the Schottky barrier height and, in contrast to traditional metal-insulator-metal diodes, is logarithmically proportional to the device thickness. Hysteresis in the I–V curve occurs due to the current limited filling of traps.
|
Aug 2018
|
|
I09-Surface and Interface Structural Analysis
|
S. A.
Chambers
,
Y.
Du
,
Z.
Zhu
,
J.
Wang
,
M. J.
Wahila
,
L. F. J.
Piper
,
A.
Prakash
,
J.
Yue
,
B.
Jalan
,
S. R.
Spurgeon
,
D. M.
Kepaptsoglou
,
Q. M.
Ramasse
,
P. V.
Sushko
Diamond Proposal Number(s):
[16630]
Abstract: Photoemission features associated with states deep in the band gap of n−SrTiO3(001) are found to be ubiquitous in bulk crystals and epitaxial films. These features are present even when there is little signal near the Fermi level. Analysis reveals that these states are deep-level traps associated with defects. The commonly investigated defects—O vacancies, Sr vacancies, and aliovalent impurity cations on the Ti sites—cannot account for these features. Rather, ab initio modeling points to these states resulting from interstitial oxygen and its interaction with donor electrons.
|
Jun 2018
|
|
I09-Surface and Interface Structural Analysis
|
Jia-Ye
Zhang
,
Weiwei
Li
,
Robert L. Z.
Hoye
,
Judith
Macmanus-Driscoll
,
Melanie
Budde
,
Oliver
Bierwagen
,
Le
Wang
,
Yingge
Du
,
Matthew
Wahila
,
Louis F. J.
Piper
,
Tien-Lin
Lee
,
Holly
Edwards
,
Vinod R.
Dhanak
,
Hongliang
Zhang
Diamond Proposal Number(s):
[16005]
Abstract: NiO is a p-type wide bandgap semiconductor of use in various electronic devices ranging from solar cells to transparent transistors. Understanding and improving its optical and transport properties have been of considerable interest. In this work, we have investigated the effect of Li doping on the electronic, optical and transport properties of NiO epitaxial thin films grown by pulsed laser deposition. We show that Li doping significantly increases the p-type conductivity of NiO, but all the films have relatively low room-temperature mobilities (< 0.05 cm2 V−1s−1). The conduction mechanism is better described by small-polaron hoping model in the temperature range of 200 K < T <330 K, and variable range hopping at T <200 K. A combination of x-ray photoemission and O K-edge x-ray absorption spectroscopic investigations reveal that the Fermi level gradually shifts toward the valence band maximum (VBM) and a new hole state develops with Li doping. Both the VBM and hole states are composed of primarily Zhang-Rice bound states, which accounts for the small polaron character (low mobility) of hole conduction. Our work provides guidelines for the search for p-type oxide materials and device optimization.
|
Jan 2018
|
|
I09-Surface and Interface Structural Analysis
|
Zachary W.
Lebens-Higgins
,
Shawn
Sallis
,
Nicholas V.
Faenza
,
Fadwa
Badway
,
Nathalie
Pereira
,
David M.
Halat
,
Matthew
Wahila
,
Christoph
Schlueter
,
Tien-Lin
Lee
,
Wanli
Yang
,
Clare P.
Grey
,
Glenn G.
Amatucci
,
Louis F. J.
Piper
Diamond Proposal Number(s):
[12764, 16005]
Abstract: For layered oxide cathodes, impedance growth and capacity fade related to reactions at the cathode-electrolyte interface (CEI) are particularly prevalent at high voltage and high temperatures. At a minimum, the CEI layer consists of Li2CO3, LiF, reduced (relative to the bulk) metal-ion species, and salt decomposition species but conflicting reports exist regarding their progression during (dis)charging. Utilizing transport measurements in combination with x-ray and nuclear magnetic resonance spectroscopy techniques, we study the evolution of these CEI species as a function of electrochemical and thermal stress for LiNi0.8Co0.15Al0.05O2 (NCA) particle electrodes using a LiPF6 ethylene carbonate: dimethyl carbonate (1:1 volume ratio) electrolyte. Although initial surface metal reduction does correlate with surface Li2CO3 and LiF, these species are found to decompose upon charging and are absent above 4.25 V. While there is trace LiPF6 breakdown at room temperature above 4.25 V, thermal aggravation is found to strongly promote salt breakdown and contributes to surface degradation even at lower voltages (4.1 V). An interesting finding of our work was the partial reformation of LiF upon discharge which warrants further consideration for understanding CEI stability during cycling.
|
Jan 2018
|
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