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Instruments / Technical Area	Publication Details	Published	Actions
I05-ARPES	Boron-doped graphene nanoribbons: Electronic structure and Raman fingerprint Boris V. Senkovskiy , Dmitry Yu. Usachov , Alexander V. Fedorov , Tomas Marangoni , Danny Haberer , Cesare Tresca , Gianni Profeta , Vasile Caciuc , Shigeru Tsukamoto , Nicolae Atodiresei , Niels Ehlen , Chaoyu Chen , José Avila , Maria C. Asensio , Andrei Yu. Varykhalov , Alexei Nefedov , Christof Wöll , Timur K. Kim , Moritz Hoesch , Felix R. Fischer , Alexander Gruneis Acs Nano DOI: 10.1021/acsnano.8b04125 Diamond Proposal Number(s): [17064] Show Abstract ▼ Abstract: We investigate the electronic and vibrational properties of bottom-up synthesized aligned armchair graphene nanoribbons of N=7 carbon atoms width periodically doped by substitutional boron atoms (B-7AGNRs). Using angle-resolved photoemission spectroscopy (ARPES), we find that the dopant-derived valence and conduction band states are notably hybridized with electronic states of Au substrate and spread in energy. The interaction with the substrate leaves the bands with pure carbon character rather unperturbed. This results in an identical effective mass of ~0.2 m0 for the next highest valence band compared to pristine 7AGNRs. We probe the phonons of B-7AGNRs by ultra-high vacuum (UHV) Raman spectroscopy and reveal the existence of characteristic splittings and red-shifts of Raman modes due to the presence of substitutional boron atoms. Comparing the Raman spectra for three visible lasers (red, green and blue) we find that interaction with gold suppresses the Raman signal from B-7AGNRs and the energy of a green laser (2.33 eV) is closer to the resonant E22 transition. The hybridized electronic structure of the B-7AGNR/Au interface is expected to improve electrical characteristics of contacts between graphene nanoribbon and Au. The Raman fingerprint allows easy identification of B-7AGNRs, that is particularly useful for device fabrication.	Jul 2018
I09-Surface and Interface Structural Analysis	Structure and growth of hexagonal boron nitride on Ir(111) Ferdinand Farwick Zum Hagen , Domenik M. Zimmermann , Caio C. Silva , Christoph Schlueter , Nicolae Atodiresei , Wouter Jolie , Antonio J. Martínez-Galera , Daniela Dombrowski , Ulrike A. Schröder , Moritz Will , Predrag Lazić , Vasile Caciuc , Stefan Blügel , Tien-Lin Lee , Thomas Michely , Carsten Busse Acs Nano DOI: 10.1021/acsnano.6b05819 Diamond Proposal Number(s): [9012, 10320, 12447] Show Abstract ▼ Abstract: Using the X-ray standing wave method, scanning tunneling microscopy, low energy electron diffraction, and density functional theory, we precisely determine the lateral and vertical structure of hexagonal boron nitride on Ir(111). The moiré superstructure leads to a periodic arrangement of strongly chemisorbed valleys in an otherwise rather flat, weakly physisorbed plane. The best commensurate approximation of the moiré unit cell is (12 × 12) boron nitride cells resting on (11 × 11) substrate cells, which is at variance with several earlier studies. We uncover the existence of two fundamentally different mechanisms of layer formation for hexagonal boron nitride, namely, nucleation and growth as opposed to network formation without nucleation. The different pathways are linked to different distributions of rotational domains, and the latter enables selection of a single orientation only.	Nov 2016

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