I09-Surface and Interface Structural Analysis
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Huw
Shiel
,
Oliver S.
Hutter
,
Laurie J.
Phillips
,
Jack E. N.
Swallow
,
Leanne A. H.
Jones
,
Thomas J.
Featherstone
,
Matthew J.
Smiles
,
Pardeep K.
Thakur
,
Tien-Lin
Lee
,
Vinod R.
Dhanak
,
Jonathan D.
Major
,
Tim D.
Veal
Diamond Proposal Number(s):
[23160]
Abstract: Sb2Se3 is a promising material for use in photovoltaics, but the optimum device structure has not yet been identified. This study provides band alignment measurements between Sb2Se3, identical to that used in high-efficiency photovoltaic devices, and its two most commonly used window layers, namely, CdS and TiO2. Band alignments are measured via two different approaches: Anderson’s rule was used to predict an interface band alignment from measured natural band alignments, and the Kraut method was used in conjunction with hard X-ray photoemission spectroscopy to directly measure the band offsets at the interface. This allows examination of the effect of interface formation on the band alignments. The conduction band minimum (CBM) of TiO2 is found by the Kraut method to lie 0.82 eV below that of Sb2Se3, whereas the CdS CBM is only 0.01 eV below that of Sb2Se3. Furthermore, a significant difference is observed between the natural alignment- and Kraut method-determined offsets for TiO2/Sb2Se3, whereas there is little difference for CdS/Sb2Se3. Finally, these results are related to device performance, taking into consideration how these results may guide the future development of Sb2Se3 solar cells and providing a methodology that can be used to assess band alignments in device-relevant systems.
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Dec 2020
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Abstract: High resolution X-ray diffraction (HRXRD) pattern of highly c-oriented (002) thin film provide a direct evidence of the formation of R-3c orthorhombic ZnCO3 structural phase. Room temperature ferromagnetism (RTFM) is measured using bulk vibrating sample magnetometery (VSM). A strong orbital anisotropy has been observed by X-ray linear dichroism (XLD) experiment, which also supports that ZnCO3 phase is structurally non-distortive after carbon-implantation. The absence of X-ray magnetic circular dichroism (XMCD) signal at O K- and C K-edges suggest that bulk VSM ferromagnetism is not related to the magnetic polarization of O 2p/C 2p orbitals hybridized with Zn-states. These experiments clearly indicate that the complex C–ZnO/ZnCO3 phase should be ferromagnetic having out-of-plane/in-plane orbital reconstruction.
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Nov 2020
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I09-Surface and Interface Structural Analysis
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Jack E. N.
Swallow
,
Christian
Vorwerk
,
Piero
Mazzolini
,
Patrick
Vogt
,
Oliver
Bierwagen
,
Alexander
Karg
,
Martin
Eickhoff
,
Jörg
Schörmann
,
Markus R.
Wagner
,
Joseph William
Roberts
,
Paul R.
Chalker
,
Matthew J.
Smiles
,
Philip
Murgatroyd
,
Sara
Mohamed
,
Zachary W.
Lebens-higgins
,
Louis F. J.
Piper
,
Leanne A. H.
Jones
,
Pardeep K.
Thakur
,
Tien-lin
Lee
,
Joel B.
Varley
,
Juergen
Furthmüller
,
Claudia
Draxl
,
Tim D.
Veal
,
Anna
Regoutz
Diamond Proposal Number(s):
[21430, 24670]
Abstract: The search for new wide band gap materials is intensifying to satisfy the need for more advanced and energy effcient power electronic devices. Ga2O3 has emerged as an alternative to SiC and GaN, sparking a renewed interest in its fundamental properties beyond the main β-phase. Here, three polymorphs of Ga2O3, α, β, and ε, are investigated using X-ray diffraction, X-ray photoelectron and absorption spectroscopy, and ab initio theoretical approaches to gain insights into their structure - electronic structure relationships. Valence and conduction electronic structure as well as semi-core and core states are probed, providing a complete picture of the influence of local coordination environments on the electronic structure. State-of-the-art electronic structure theory, including all-electron density functional theory and many-body perturbation theory, provide detailed understanding of the spectroscopic results. The calculated spectra provide very accurate descriptions of all experimental spectra and additionally illuminate the origin of observed spectral features. This work provides a strong basis for the exploration of the Ga2O3 polymorphs as materials at the heart of future electronic device generations.
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Sep 2020
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I09-Surface and Interface Structural Analysis
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Christopher H.
Don
,
Huw
Shiel
,
Theodore D. C.
Hobson
,
Christopher N.
Savory
,
Jack E. N.
Swallow
,
Matthew J.
Smiles
,
Leanne A. H.
Jones
,
Thomas J.
Featherstone
,
Pardeep K.
Thakur
,
Tien-lin
Lee
,
Ken
Durose
,
Jonathan D.
Major
,
Vinod R.
Dhanak
,
David O.
Scanlon
,
Tim D.
Veal
Diamond Proposal Number(s):
[21431]
Open Access
Abstract: The presence of a lone pair of 5s electrons at the valence band maximum (VBM) of Sb2Se3 and the resulting band alignments are investigated using soft and hard X-ray photoemission spectroscopy in parallel with density functional theory (DFT) calculations. Vacuum-cleaved and exfoliated bulk crystals of Sb2Se3 are analysed using laboratory and synchrotron X-ray sources to acquire high resolution valence band spectra with both soft and hard X-rays. Utilising the photon-energy dependence of different orbital cross-sections and corresponding DFT calculations, the various orbital contributions to the valence band could be identified, including the 5s orbital's presence at the VBM. The ionization potential is also determined and places the VBM at 5.13 eV below the vacuum level, similar to other materials with 5s2 lone pairs, but far above those of related materials without lone pairs of electrons.
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Aug 2020
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I09-Surface and Interface Structural Analysis
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Minh Hai
Tran
,
Ali M.
Malik
,
Michael
Dürrschnabel
,
Anna
Regoutz
,
Pardeep
Thakur
,
Tien-lin
Lee
,
Delwin
Perera
,
Leopoldo
Molina-luna
,
Karsten
Albe
,
Jochen
Rohrer
,
Christina S.
Birkel
Diamond Proposal Number(s):
[24670]
Abstract: Two-dimensional carbides/nitrides, typically called MXenes, are an emerging member of the ever-growing family of two-dimensional materials. The prediction of a ferromagnetic groundstate in chromium-containing MXenes has triggered growing interest in their chemical exfoliation from Cr-based MAX phases. However, the exfoliation poses serious difficulties using standard etching agents such as hydrofluoric acid (HF). Here, we investigate the exfoliability of Cr2GaC particles by chemical etching with aqueous HF both experimentally and theoretically. Structural and microstructural analyses show that the Cr2GaC particles decompose into chromium carbide and oxide without the formation of a Cr-based MXene. A thermodynamic analysis based on ab initio electronic structure calculations reveals that the exfoliation of Cr-based MXene from Cr2GaC by HF-etching is inhibited by more favorable competing reactions. This result confirms the experimental finding and suggests that HF is an unsuitable etching agent for a successful exfoliation of Cr2GaC.
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Jul 2020
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I09-Surface and Interface Structural Analysis
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Leanne A. H.
Jones
,
Wojciech M.
Linhart
,
Nicole
Fleck
,
Jack E. N.
Swallow
,
Philip A. E.
Murgatroyd
,
Huw
Shiel
,
Thomas J.
Featherstone
,
Matthew J.
Smiles
,
Pardeep K.
Thakur
,
Tien-lin
Lee
,
Laurence J.
Hardwick
,
Jonathan
Alaria
,
Frank
Jaeckel
,
Robert
Kudrawiec
,
Lee A.
Burton
,
Aron
Walsh
,
Jonathan M.
Skelton
,
Tim D.
Veal
,
Vin R.
Dhanak
Diamond Proposal Number(s):
[21431]
Open Access
Abstract: The effects of Sn
5
s
lone pairs in the different phases of Sn sulphides are investigated with photoreflectance, hard x-ray photoemission spectroscopy (HAXPES), and density functional theory. Due to the photon energy-dependence of the photoionization cross sections, at high photon energy, the Sn
5
s
orbital photoemission has increased intensity relative to that from other orbitals. This enables the Sn
5
s
state contribution at the top of the valence band in the different Sn-sulphides, SnS,
Sn
2
S
3
, and
SnS
2
, to be clearly identified. SnS and
Sn
2
S
3
contain Sn(II) cations and the corresponding Sn
5
s
lone pairs are at the valence band maximum (VBM), leading to
∼
1.0
–1.3 eV band gaps and relatively high VBM on an absolute energy scale. In contrast,
SnS
2
only contains Sn(IV) cations, no filled lone pairs, and therefore has a
∼
2.3
eV room-temperature band gap and much lower VBM compared with SnS and
Sn
2
S
3
. The direct band gaps of these materials at 20 K are found using photoreflectance to be 1.36, 1.08, and 2.47 eV for SnS,
Sn
2
S
3
, and
SnS
2
, respectively, which further highlights the effect of having the lone-pair states at the VBM. As well as elucidating the role of the Sn
5
s
lone pairs in determining the band gaps and band alignments of the family of Sn-sulphide compounds, this also highlights how HAXPES is an ideal method for probing the lone-pair contribution to the density of states of the emerging class of materials with
n
s
2
configuration.
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Jul 2020
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I09-Surface and Interface Structural Analysis
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Judith Veronika
Berens
,
Sebastian
Bichelmaier
,
Nathalie K.
Fernando
,
Pardeep Kumar
Thakur
,
Tien-lin
Lee
,
Manfred
Mascheck
,
Tomas
Wiell
,
Susanna K.
Eriksson
,
J. Matthias
Kahk
,
Johannes
Lischner
,
Manesh
Mistry
,
Thomas
Aichinger
,
Gregor
Pobegen
,
Anna
Regoutz
Diamond Proposal Number(s):
[19885]
Open Access
Abstract: SiC is set to enable a new era in power electronics impacting a wide range of energy technologies, from electric vehicles to renewable energy. Its physical characteristics outperform silicon in many aspects, including band gap, breakdown field, and thermal conductivity. The main challenge for further development of SiC-based power semiconductor devices is the quality of the interface between SiC and its native dielectric SiO2. High temperature nitridation processes can improve the interface quality and ultimately the device performance immensely, but the underlying chemical processes are still poorly understood. Here, we present an energy-dependent hard X-ray photoelectron spectroscopy (HAXPES) study probing non-destructively SiC and SiO2 and their interface in device stacks treated in varying atmospheres. We successfully combine laboratory- and synchrotron-based HAXPES to provide unique insights into the chemistry of interface defects and their passivation through nitridation processes.
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Apr 2020
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I09-Surface and Interface Structural Analysis
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Theodore D. C.
Hobson
,
Laurie J
Phillips
,
Oliver S
Hutter
,
Huw
Shiel
,
Jack E. N.
Swallow
,
Christopher N.
Savory
,
Pabitra K
Nayak
,
Silvia
Mariotti
,
Bhaskar
Das
,
Leon
Bowen
,
Leanne A. H.
Jones
,
Thomas J.
Featherstone
,
Matthew J.
Smiles
,
Mark A
Farnworth
,
Guillaume
Zoppi
,
Pardeep K.
Thakur
,
Tien-lin
Lee
,
Henry J.
Snaith
,
Chris
Leighton
,
David O.
Scanlon
,
Vinod R.
Dhanak
,
Ken
Durose
,
Tim D.
Veal
,
Jonathan D
Major
Diamond Proposal Number(s):
[21431]
Open Access
Abstract: The carrier type of Sb2Se3 was evaluated for both thin films and bulk crystals via a range of complementary techniques. X-ray photoelectron spectroscopy (XPS), hot-probe, hall effect and surface photo-voltage spectroscopy showed material synthesized from Sb2Se3 granulate mate-rial to be n-type with chlorine identified as an unintentional n-type dopant via secondary ion mass spectrometry analysis. The validity of chlorine as a dopant was con-firmed by synthesis of intrinsic crystals from metallic precursors and subsequent n-type doping by the addition of MgCl2. Chlorine was also shown to be a substitutional n-type shallow dopant by density functional theory calculations. TiO2/Sb2Se3 n-n isotype heterojunction solar cells of 7.3% efficiency based are demonstrated with band alignment analyzed via XPS.
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Mar 2020
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I09-Surface and Interface Structural Analysis
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Diamond Proposal Number(s):
[19033]
Abstract: Heteromolecular bilayers of π-conjugated organic molecules (COM) on metals, considered as model systems for more complex thin film heterostructures, are investigated with respect to their structural and electronic properties. By exploring the influence of the organic-metal interaction strength in bilayer systems, we determine the molecular arrangement in the physisorptive regime for copper-hexadecafluorophthalocyanine (F16CuPc) on Au(111) with intermediate layers of 5,7,12,14-pentacenetetrone (P4O) and perylene-3,4,9,10-tetracarboxylic diimide (PTCDI). Using the X-ray standing wave (XSW) technique to distinguish the different molecular layers, we show that these two bilayers are ordered following their deposition sequence. Surprisingly, F16CuPc as the second layer within the heterostructures exhibits an inverted intramolecular distortion compared to its monolayer structure.
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Feb 2020
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I05-ARPES
I09-Surface and Interface Structural Analysis
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Veronika
Sunko
,
F.
Mazzola
,
S.
Kitamura
,
S.
Khim
,
P.
Kushwaha
,
O. J.
Clark
,
M. D.
Watson
,
I.
Markovic
,
D.
Biswas
,
L.
Pourovskii
,
T. K.
Kim
,
T.-l.
Lee
,
P. K.
Thakur
,
H.
Rosner
,
A.
Georges
,
R.
Moessner
,
T.
Oka
,
A. P.
Mackenzie
,
P. D. C.
King
Diamond Proposal Number(s):
[19479, 17699]
Abstract: A nearly free electron metal and a Mott insulating state can be thought of as opposite ends of the spectrum of possibilities for the motion of electrons in a solid. Understanding their interaction lies at the heart of the correlated electron problem. In the magnetic oxide metal PdCrO2, nearly free and Mott-localized electrons exist in alternating layers, forming natural heterostructures. Using angle-resolved photoemission spectroscopy, quantitatively supported by a strong coupling analysis, we show that the coupling between these layers leads to an “intertwined” excitation that is a convolution of the charge spectrum of the metallic layer and the spin susceptibility of the Mott layer. Our findings establish PdCrO2 as a model system in which to probe Kondo lattice physics and also open new routes to use the a priori nonmagnetic probe of photoemission to gain insights into the spin susceptibility of correlated electron materials.
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Feb 2020
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