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Instruments / Technical Area	Publication Details	Published
I05-ARPES	Observation of Mott instability at the valence transition of f-electron system Haifeng Yang , Jingjing Gao , Yingying Cao , Yuanji Xu , Aiji Liang , Xiang Xu , Yujie Chen , Shuai Liu , Kui Huang , Lixuan Xu , Chengwei Wang , Shengtao Cui , Meixiao Wang , Lexian Yang , Xuan Luo , Yuping Sun , Yi-Feng Yang , Zhongkai Liu , Yulin Chen National Science Review DOI: 10.1093/nsr/nwad035 Open Access Show Abstract ▼ Abstract: Mott physics plays a critical role in materials with strong electronic correlations. Mott insulator-to-metal transition can be driven by chemical doping, external pressure, temperature and gate voltage, which is often seen in transition metal oxides with 3d electrons near the Fermi energy (e.g. cuprate superconductor). In 4f-electron system, however, the insulator-to-metal transition is mostly driven by Kondo hybridization and the Mott physics has rarely been explored in experiments. Here, by combining the angle-resolved photoemission spectroscopy and strongly correlated band structure calculations, we show that an unusual Mott instability exists in YbInCu4 accompanying its mysterious first-order valence transition. This contrasts with the prevalent Kondo picture and demonstrates that YbInCu4 is a unique platform to explore the Mott physics in Kondo lattice systems. Our work provides important insight for the understanding and manipulation of correlated quantum phenomena in the f-electron system.	Feb 2023
E02-JEM ARM 300CF	A fundamental look at electrocatalytic sulfur reduction reaction Lele Peng , Ziyang Wei , Chengzhang Wan , Jing Lin , Zhuo Chen , Dan Zhu , Daniel Baumann , Haotian Liu , Christopher S. Allen , Xiang Xu , Angus I. Kirkland , Imran Shakir , Zeyad Almutairi , Sarah Tolbert , Bruce Dunn , Yu Huang , Philippe Sautet , Xiangfeng Duan Nature Catalysis 3, 762 - 770 DOI: 10.1038/s41929-020-0498-x Diamond Proposal Number(s): [23956] Show Abstract ▼ Abstract: The fundamental kinetics of the electrocatalytic sulfur reduction reaction (SRR), a complex 16-electron conversion process in lithium–sulfur batteries, is so far insufficiently explored. Here, by directly profiling the activation energies in the multistep SRR, we reveal that the initial reduction of sulfur to the soluble polysulfides is relatively easy owing to the low activation energy, whereas the subsequent conversion of the polysulfides into the insoluble Li2S2/Li2S has a much higher activation energy, contributing to the accumulation of polysulfides and exacerbating the polysulfide shuttling effect. We use heteroatom-doped graphene as a model system to explore electrocatalytic SRR. We show that nitrogen and sulfur dual-doped graphene considerably reduces the activation energy to improve SRR kinetics. Density functional calculations confirm that the doping tunes the p-band centre of the active carbons for an optimal adsorption strength of intermediates and electroactivity. This study establishes electrocatalysis as a promising pathway to tackle the fundamental challenges facing lithium–sulfur batteries.	Sep 2020
I05-ARPES	Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi2O2Se Cheng Chen , Meixiao Wang , Jinxiong Wu , Huixia Fu , Haifeng Yang , Zhen Tian , Teng Tu , Han Peng , Yan Sun , Xiang Xu , Juan Jiang , Niels B. M. Schroeter , Yiwei Li , Ding Pei , Shuai Liu , Sandy A. Ekahana , Hongtao Yuan , Jiamin Xue , Gang Li , Jinfeng Jia , Zhongkai Liu , Binghai Yan , Hailin Peng , Yulin Chen Science Advances 4 DOI: 10.1126/sciadv.aat8355 Diamond Proposal Number(s): [18005] Open Access Show Abstract ▼ Abstract: Semiconductors are essential materials that affect our everyday life in the modern world. Two-dimensional semiconductors with high mobility and moderate bandgap are particularly attractive today because of their potential application in fast, low-power, and ultrasmall/thin electronic devices. We investigate the electronic structures of a new layered air-stable oxide semiconductor, Bi2O2Se, with ultrahigh mobility (~2.8 × 105 cm2/V⋅s at 2.0 K) and moderate bandgap (~0.8 eV). Combining angle-resolved photoemission spectroscopy and scanning tunneling microscopy, we mapped out the complete band structures of Bi2O2Se with key parameters (for example, effective mass, Fermi velocity, and bandgap). The unusual spatial uniformity of the bandgap without undesired in-gap states on the sample surface with up to ~50% defects makes Bi2O2Se an ideal semiconductor for future electronic applications. In addition, the structural compatibility between Bi2O2Se and interesting perovskite oxides (for example, cuprate high–transition temperature superconductors and commonly used substrate material SrTiO3) further makes heterostructures between Bi2O2Se and these oxides possible platforms for realizing novel physical phenomena, such as topological superconductivity, Josephson junction field-effect transistor, new superconducting optoelectronics, and novel lasers.	Sep 2018

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