I06-Nanoscience
|
Dong
Li
,
Bonan
Zhu
,
Dirk
Backes
,
Larissa S. I.
Veiga
,
Tien-Lin
Lee
,
Hongguang
Wang
,
Qian
He
,
Pinku
Roy
,
Jiaye
Zhang
,
Jueli
Shi
,
Aiping
Chen
,
Peter A.
Van Aken
,
Quanxi
Jia
,
Sarnjeet S.
Dhesi
,
David O.
Scanlon
,
Kelvin H. L.
Zhang
,
Weiwei
Li
Diamond Proposal Number(s):
[25425, 26901, 29616]
Abstract: Strain engineering of epitaxial transition metal oxide heterostructures offers an intriguing opportunity to control electronic structures by modifying the interplay between spin, charge, orbital, and lattice degrees of freedom. Here, we demonstrate that the electronic structure, magnetic and transport properties of
La
0.9
Ba
0.1
MnO
3
thin films can be effectively controlled by epitaxial strain. Spectroscopic studies and first-principles calculations reveal that the orbital occupancy in Mn
e
g
orbitals can be switched from the
d
3
z
2
−
r
2
orbital to the
d
x
2
−
y
2
orbital by varying the strain from compressive to tensile. The change of orbital occupancy associated with Mn
3
d
-O
2
p
hybridization leads to dramatic modulation of the magnetic and electronic properties of strained
La
0.9
Ba
0.1
MnO
3
thin films. Under moderate tensile strain, an emergent ferromagnetic insulating state with an enhanced ferromagnetic Curie temperature of 215 K is achieved. These findings not only deepen our understanding of electronic structures, magnetic and transport properties in the
La
0.9
Ba
0.1
MnO
3
system, but also demonstrate the use of epitaxial strain as an effective knob to tune the electronic structures and related physical properties for potential spintronic device applications.
|
Apr 2022
|
|
I09-Surface and Interface Structural Analysis
|
Jiaye
Zhang
,
Joe
Willis
,
Zhenni
Yang
,
Xu
Lian
,
Wei
Chen
,
Lai-Sen
Wang
,
Xiangyu
Xu
,
Tien-Lin
Lee
,
Lang
Chen
,
David O.
Scanlon
,
Kelvin H. I.
Zhang
Diamond Proposal Number(s):
[24219]
Open Access
Abstract: Deep UV transparent thin films have recently attracted considerable attention owing to their potential in UV and organic-based optoelectronics. Here, we report the achievement of a deep UV transparent and highly conductive thin film based on Si-doped Ga2O3 (SGO) with high conductivity of 2500 S/cm. The SGO thin films exhibit high transparency over a wide spectrum ranging from visible light to deep UV wavelength and, meanwhile, have a very low work-function of approximately 3.2 eV. A combination of photoemission spectroscopy and theoretical studies reveals that the delocalized conduction band derived from Ga 4s orbitals is responsible for the Ga2O3 films’ high conductivity. Furthermore, Si is shown to act as an efficient shallow donor, yielding high mobility up to approximately 60 cm2/Vs. The superior optoelectronic properties of SGO films make it a promising material for use as electrodes in high-power electronics and deep UV and organic-based optoelectronic devices.
|
Mar 2022
|
|
I09-Surface and Interface Structural Analysis
|
Jueli
Shi
,
Ethan A.
Rubinstein
,
Weiwei
Li
,
Jiaye
Zhang
,
Ye
Yang
,
Tien-Lin
Lee
,
Changdong
Qin
,
Pengfei
Yan
,
Judith L.
Macmanus-Driscoll
,
David O.
Scanlon
,
Kelvin H.l.
Zhang
Diamond Proposal Number(s):
[24219]
Open Access
Abstract: Oxide semiconductors are key materials in many technologies from flat-panel displays，solar cells to transparent electronics. However, many potential applications are hindered by the lack of high mobility p-type oxide semiconductors due to the localized O-2p derived valence band (VB) structure. In this work, the VB structure modulation is reported for perovskite Ba2BiMO6 (M = Bi, Nb, Ta) via the Bi 6s2 lone pair state to achieve p-type oxide semiconductors with high hole mobility up to 21 cm2 V−1 s−1, and optical bandgaps widely varying from 1.5 to 3.2 eV. Pulsed laser deposition is used to grow high quality epitaxial thin films. Synergistic combination of hard x-ray photoemission, x-ray absorption spectroscopies, and density functional theory calculations are used to gain insight into the electronic structure of Ba2BiMO6. The high mobility is attributed to the highly dispersive VB edges contributed from the strong coupling of Bi 6s with O 2p at the top of VB that lead to low hole effective masses (0.4–0.7 me). Large variation in bandgaps results from the change in the energy positions of unoccupied Bi 6s orbital or Nb/Ta d orbitals that form the bottom of conduction band. P–N junction diode constructed with p-type Ba2BiTaO6 and n-type Nb doped SrTiO3 exhibits high rectifying ratio of 1.3 × 104 at ±3 V, showing great potential in fabricating high-quality devices. This work provides deep insight into the electronic structure of Bi3+ based perovskites and guides the development of new p-type oxide semiconductors.
|
Jan 2022
|
|
I09-Surface and Interface Structural Analysis
|
Diamond Proposal Number(s):
[19191]
Abstract: CuBi2O4 exhibits significant potential for the photoelectrochemical (PEC) conversion of solar energy into chemical fuels, owing to its extended visible-light absorption and positive flat band potential vs the reversible hydrogen electrode. A detailed understanding of the fundamental electronic structure and its correlation with PEC activity is of significant importance to address limiting factors, such as poor charge carrier mobility and stability under PEC conditions. In this study, the electronic structure of CuBi2O4 has been studied by a combination of hard X-ray photoemission spectroscopy, resonant photoemission spectroscopy, and X-ray absorption spectroscopy (XAS) and compared with density functional theory (DFT) calculations. The photoemission study indicates that there is a strong Bi 6s–O 2p hybrid electronic state at 2.3 eV below the Fermi level, whereas the valence band maximum (VBM) has a predominant Cu 3d–O 2p hybrid character. XAS at the O K-edge supported by DFT calculations provides a good description of the conduction band, indicating that the conduction band minimum is composed of unoccupied Cu 3d–O 2p states. The combined experimental and theoretical results suggest that the low charge carrier mobility for CuBi2O4 derives from an intrinsic charge localization at the VBM. Also, the low-energy visible-light absorption in CuBi2O4 may result from a direct but forbidden Cu d–d electronic transition, leading to a low absorption coefficient. Additionally, the ionization potential of CuBi2O4 is higher than that of the related binary oxide CuO or that of NiO, which is commonly used as a hole transport/extraction layer in photoelectrodes. This work provides a solid electronic basis for topical materials science approaches to increase the charge transport and improve the photoelectrochemical properties of CuBi2O4-based photoelectrodes.
|
Sep 2020
|
|
I06-Nanoscience
|
Weiwei
Li
,
Bonan
Zhu
,
Ruixue
Zhu
,
Qiang
Wang
,
Ping
Lu
,
Yuanwei
Sun
,
Clodomiro
Cafolla
,
Zhimin
Qi
,
Aiping
Chen
,
Peng
Gao
,
Haiyan
Wang
,
Qing
He
,
Kelvin H. L.
Zhang
,
Judith L.
Macmanus‐driscoll
Diamond Proposal Number(s):
[17284]
Open Access
Abstract: Control of BO6 octahedral rotations at the heterointerfaces of dissimilar ABO3 perovskites has emerged as a powerful route for engineering novel physical properties. However, its impact length scale is constrained at 2–6 unit cells close to the interface and the octahedral rotations relax quickly into bulk tilt angles away from interface. Here, a long‐range (up to 12 unit cells) suppression of MnO6 octahedral rotations in La0.9Ba0.1MnO3 through the formation of superlattices with SrTiO3 can be achieved. The suppressed MnO6 octahedral rotations strongly modify the magnetic and electronic properties of La0.9Ba0.1MnO3 and hence create a new ferromagnetic insulating state with enhanced Curie temperature of 235 K. The emergent properties in La0.9Ba0.1MnO3 arise from a preferential occupation of the out‐of‐plane Mn d 3z 2−r 2 orbital and a reduced Mn eg bandwidth, induced by the suppressed octahedral rotations. The realization of long‐range tuning of BO6 octahedra via superlattices can be applicable to other strongly correlated perovskites for exploring new emergent quantum phenomena.
|
Aug 2020
|
|
I06-Nanoscience
|
Weiwei
Li
,
Bonan
Zhu
,
Qian
He
,
Albina Y.
Borisevich
,
Chao
Yun
,
Rui
Wu
,
Ping
Lu
,
Zhimin
Qi
,
Qiang
Wang
,
Aiping
Chen
,
Haiyan
Wang
,
Stuart A.
Cavill
,
Kelvin H. L.
Zhang
,
Judith L.
Macmanus‐driscoll
Diamond Proposal Number(s):
[17284]
Open Access
Abstract: Ultrathin epitaxial films of ferromagnetic insulators (FMIs) with Curie temperatures near room temperature are critically needed for use in dissipationless quantum computation and spintronic devices. However, such materials are extremely rare. Here, a room‐temperature FMI is achieved in ultrathin La0.9Ba0.1MnO3 films grown on SrTiO3 substrates via an interface proximity effect. Detailed scanning transmission electron microscopy images clearly demonstrate that MnO6 octahedral rotations in La0.9Ba0.1MnO3 close to the interface are strongly suppressed. As determined from in situ X‐ray photoemission spectroscopy, O K‐edge X‐ray absorption spectroscopy, and density functional theory, the realization of the FMI state arises from a reduction of Mn eg bandwidth caused by the quenched MnO6 octahedral rotations. The emerging FMI state in La0.9Ba0.1MnO3 together with necessary coherent interface achieved with the perovskite substrate gives very high potential for future high performance electronic devices.
|
Nov 2019
|
|
I09-Surface and Interface Structural Analysis
|
Diamond Proposal Number(s):
[21432]
Abstract: This work reports a systematical study on the relationship of electronic structure to oxygen evolution reaction (OER) activity of NixCo3-xO4 (x=0-1) mixed oxides. The specific OER activity is substantially increased by 16 times from 0.02 mA cm-2BET for pure Co3O4 to 0.32 mA cm-2BET for x=1 at an overpotential of 0.4 V and exhibits a strong correlation with the amount of Ni ions in +3 oxidation state. X-ray spectroscopic study reveals that inclusion of Ni3+ ions upshifts the occupied valence band maximum (VBM) by 0.27 eV toward the Fermi level (EF), and creates a new hole (unoccupied) state located ~1 eV above the EF. Such electronic features favour the adsorption of OH surface intermediates on NixCo3-xO4, resulting in enhanced OER. Furthermore, the emerging hole state effectively reduces the energy barrier for electron transfer from 1.19 eV to 0.39 eV, and thereby improves the kinetics for OER. The electronic structure features that lead to a higher OER in NixCo3-xO4 can be extended to other transition metal oxides for rational design of highly active catalysts.
|
Aug 2019
|
|
I09-Surface and Interface Structural Analysis
|
Diamond Proposal Number(s):
[16005]
Abstract: Zn
M
I
I
I
2
O
4
(
M
I
I
I
=
Co
, Rh, Ir) spinels have been recently identified as promising
p
-type semiconductors for transparent electronics. However, discrepancies exist in the literature regarding their fundamental optoelectronic properties. In this paper, the electronic structures of these spinels are directly investigated using soft/hard x-ray photoelectron and x-ray absorption spectroscopies in conjunction with density functional theory calculations. In contrast to previous results,
ZnCo
2
O
4
is found to have a small electronic band gap with forbidden optical transitions between the true band edges, allowing for both bipolar doping and high optical transparency. Furthermore, increased
d
−
d
splitting combined with a concomitant lowering of Zn
s
/
p
conduction states is found to result in a
ZnCo
2
O
4
(
ZCO
)
<
ZnRh
2
O
4
(
ZRO
)
≈
ZnIr
2
O
4
(
ZIO
)
band gap trend, finally resolving long-standing discrepancies in the literature.
|
Aug 2019
|
|
I09-Surface and Interface Structural Analysis
|
Anna
Regoutz
,
Alex M.
Ganose
,
Lars
Blumenthal
,
Christoph
Schlueter
,
Tien-Lin
Lee
,
Gregor
Kieslich
,
Anthony K.
Cheetham
,
Gwilherm
Kerherve
,
Ying-Sheng
Huang
,
Ruei-San
Chen
,
Giovanni
Vinai
,
Tommaso
Pincelli
,
Giancarlo
Panaccione
,
Kelvin H. L.
Zhang
,
Russell G.
Egdell
,
Johannes
Lischner
,
David O.
Scanlon
,
David J.
Payne
Diamond Proposal Number(s):
[12673]
Abstract: Theory and experiment are combined to gain an understanding of the electronic properties of OsO2, a poorly studied metallic oxide that crystallizes in the rutile structure. Hard and soft valence-band x-ray photoemission spectra of OsO2 single crystals are in broad agreement with the results of density-functional-theory calculations, aside from a feature shifted to high binding energy of the conduction band. The energy shift corresponds to the conduction electron plasmon energy measured by reflection electron energy loss spectroscopy. The plasmon satellite is reproduced by many-body perturbation theory.
|
Feb 2019
|
|
I09-Surface and Interface Structural Analysis
|
Daniel W.
Davies
,
Aron
Walsh
,
James J.
Mudd
,
Chris F.
Mcconville
,
Anna
Regoutz
,
J. Matthias
Kahk
,
David J.
Payne
,
Vin R.
Dhanak
,
David
Hesp
,
Katariina
Pussi
,
Tien-Lin
Lee
,
Russell G.
Egdell
,
Kelvin H. L.
Zhang
Diamond Proposal Number(s):
[8441]
Abstract: Indium oxide is widely used as transparent electrode in optoelectronic devices and as a photocatalyst with activity for reduction of CO2. However, very little is known about the structural and electronic properties of its surfaces, particularly those prepared under reducing conditions. In this report, directional ‘lone-pair’ surface states associated with filled 5s2 orbitals have been identified on vacuum-annealed In2O3(111) through a combination of hard and soft X-ray photoemission spectroscopy and density functional theory calculations. The lone pairs reside on indium ad-atoms in a formal +1 oxidation state, each of which traps two electrons into a localised hybrid orbital protruding away from the surface and lying just above the valence band maximum in photoemission spectra. The third electron associated with the ad-atoms is delocalised into the conduction band, thus producing the surface electron accumulation layer identified previously on vacuum-annealed In2O3(111) (1×1) surfaces. The surface structure is further supported by low energy electron diffraction, but there is no chemical shift in indium core level x-ray photoelectron spectra between surface In(I) ad-atoms and bulk In(III). The 5s2 lone pairs confer Lewis basicity on the surface In sites and may have a pronounced impact on the catalytic or photo-catalytic activity of reduced In2O3.
|
Dec 2018
|
|
