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Instruments / Technical Area	Publication Details	Published
I05-ARPES	Bulk and surface electronic states in the dosed semimetallic HfTe 2 Zakariae El Youbi , Sungwon Jung , Saumya Mukherjee , Mauro Fanciulli , Jakub Schusser , Olivier Heckmann , Christine Richter , Jan Minar , Karol Hricovini , Matthew D. Watson , Cephise Cacho Physical Review B 101 DOI: 10.1103/PhysRevB.101.235431 Diamond Proposal Number(s): [24921] Open Access Show Abstract ▼ Abstract: The dosing of layered materials with alkali metals has become a commonly used strategy in ARPES experiments. However, precisely what occurs under such conditions, both structurally and electronically, has remained a matter of debate. Here we perform a systematic study of 1T- HfTe 2 , a prototypical semimetal of the transition metal dichalcogenide family. By utilizing photon energy-dependent angle-resolved photoemission spectroscopy (ARPES), we have investigated the electronic structure of this material as a function of potassium (K) deposition. From the k z maps, we observe the appearance of 2D dispersive bands after electron dosing, with an increasing sharpness of the bands, consistent with the wave-function confinement at the topmost layer. In our highest-dosing cases, a monolayerlike electronic structure emerges, presumably as a result of intercalation of the alkali metal. Here, by bringing the topmost valence band below E F , we can directly measure a band overlap of ∼ 0.2 eV. However, 3D bulklike states still contribute to the spectra even after considerable dosing. Our work provides a reference point for the increasingly popular studies of the alkali metal dosing of semimetals using ARPES.	Jun 2020
I09-Surface and Interface Structural Analysis	Bixbyite-Ta 2 N 2 O film prepared by HiPIMS and postdeposition annealing: Structure and properties J. Čapek , Š. Batková , M. Matas , Š. Kos , T. Kozák , S. Haviar , J. Houška , J. Schusser , J. Minar , F. Dvořák , P. Zeman Journal Of Vacuum Science & Technology A 38 DOI: 10.1116/6.0000066 Show Abstract ▼ Abstract: High-power impulse magnetron sputtering of a Ta target in precisely controlled Ar+ + O2+ 2 + N2 2 gas mixtures was used to prepare amorphous N-rich tantalum oxynitride (Ta–O–N) films with a finely varied elemental composition. Postdeposition annealing of the films at 900∘ 900 ° C for 5 min in vacuum led to their crystallization without any significant change in the elemental composition. The authors show that this approach allows preparation of a Ta–O–N film with a dominant Ta2 2 N2 2 O phase of the bixbyite structure. As far as the authors know, this phase has been neither experimentally nor theoretically reported yet. The film exhibits semiconducting properties characterized by two electrical (indirect or selection-rule forbidden) bandgaps of about 0.2 and 1.0 eV and one optical (direct and selection-rule allowed) bandgap of 2.0 eV (suitable for visible-light absorption up to 620 nm). This observation is in good agreement with the carried out ab initio calculations and the experimental data obtained by soft and hard X-ray photoelectron spectroscopy. Furthermore, the optical bandgap is appropriately positioned with respect to the redox potentials for water splitting, which makes this material an interesting candidate for this application.	May 2020
	Electronic structure of a graphene-like artificial crystal of NdNiO3 Arian Arab , Xiaoran Liu , Okan Koksal , Weibing Yang , Ravini U. Chandrasena , Srimanta Middey , Mikhail Kareev , Siddharth Kumar , Marius-Adrian Husanu , Zhenzhong Yang , Lin Gu , Vladimir N. Strocov , Tien-Lin Lee , Jan Minar , Rossitza Pentcheva , Jak Chakhalian , Alexander X. Gray Nano Letters DOI: 10.1021/acs.nanolett.9b03962 Show Abstract ▼ Abstract: Artificial complex-oxide heterostructures containing ultrathin buried layers grown along the pseudocubic [111] direction have been predicted to host a plethora of exotic quantum states arising from the graphene-like lattice geometry and the interplay between strong electronic correlations and band topology. To date, however, electronic-structural investigations of such atomic layers remain an immense challenge due to the shortcomings of conventional surface-sensitive probes, with typical information depths of a few Ångstroms. Here, we use a combination of bulk-sensitive soft x-ray angle-resolved photoelectron spectroscopy (SX-ARPES), hard x-ray photoelectron spectroscopy (HAXPES) and state-of-the-art first-principles calculations to demonstrate a direct and robust method for extracting momentum-resolved and angle-integrated valence-band electronic structure of an ultrathin buckled graphene-like layer of NdNiO3 confined between two 4-unit cell-thick layers of insulating LaAlO3. The momentum-resolved dispersion of the buried Ni d states near the Fermi level obtained via SX-ARPES is in excellent agreement with the first-principles calculations and establishes the realization of an antiferro-orbital order in this artificial lattice. The HAXPES measurements reveal the presence of a valence-band (VB) bandgap of 265 meV. Our findings open a promising avenue for designing and investigating quantum states of matter with exotic order and topology in a few buried layers.	Oct 2019

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