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Instruments / Technical Area	Publication Details	Published	Actions
I09-Surface and Interface Structural Analysis	Capturing the dynamics of Ti diffusion across TixW1−x/Cu heterostructures using X-ray photoelectron spectroscopy Curran Kalha , Pardeep K. Thakur , Tien-Lin Lee , Michael Reisinger , Johannes Zechner , Michael Nelhiebel , Anna Regoutz Advanced Physics Research 26 DOI: 10.1002/apxr.202300008 Diamond Proposal Number(s): [29451] Open Access Show Abstract ▼ Abstract: Interdiffusion phenomena between adjacent materials are highly prevalent in semiconductor device architectures and can present a major reliability challenge for the industry. To fully capture these phenomena, experimental approaches must go beyond static and post-mortem studies to include in situ and in-operando setups. Here, soft and hard X-ray photoelectron spectroscopy (SXPS and HAXPES) is used to monitor diffusion in real-time across a proxy device. The device consists of a Si/SiO2/TixW1−x(300 nm)/Cu(25 nm) thin film material stack, with the TixW1−x film (x = 0.054, 0.115, 0.148) acting as a diffusion barrier between Si and Cu. The interdiffusion is monitored through the continuous collection of spectra whilst in situ annealing to 673 K. Ti within the TiW is found to be highly mobile during annealing, diffusing out of the barrier and accumulating at the Cu surface. Increasing the Ti concentration within the TixW1−x film increases the quantity of accumulated Ti, and Ti is first detected at the Cu surface at temperatures as low as 550 K. Surprisingly, at low Ti concentrations (x = 0.054), W is also mobile and diffuses alongside Ti. By monitoring the Ti 1s core level with HAXPES, the surface-accumulated Ti was observed to undergo oxidation even under ultra-high vacuum conditions, highlighting the reactivity of Ti in this system. These results provide crucial evidence for the importance of diffusion barrier composition on their efficacy during device application, delivering insights into the mechanisms underlying their effectiveness and limitations.	May 2023
I10-Beamline for Advanced Dichroism - scattering	Observation of the chiral soliton lattice above room temperature R. Brearton , S. H. Moody , L. A. Turnbull , P. D. Hatton , A. Štefančič , G. Balakrishnan , G. Van Der Laan , T. Hesjedal Advanced Physics Research 2 DOI: 10.1002/apxr.202200116 Diamond Proposal Number(s): [30613] Open Access Show Abstract ▼ Abstract: Magnetic chiral soliton lattices (CSLs) emerge from the helical phase in chiral magnets when magnetic fields are applied perpendicular to the helical propagation vector, and they show great promise for next-generation magnetic memory applications. These one-dimensional structures are previously observed at low temperatures in samples with uniaxial symmetry. Here, it is found that in-plane fields are the key to stabilizing the CSL in cubic Co8Zn10Mn2 over the entire temperature range from 15 K to below the Curie temperature (365 K). Using small-angle resonant elastic X-ray scattering, it is observed that the CSL is stabilized with an arbitrary in-plane propagation vector, while its thin plate geometry plays a deciding role in the soliton wavelength as a function of applied field. This work paves the way for high temperature, real world applications of soliton physics in future magnetic memory devices.	Apr 2023

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