I09-Surface and Interface Structural Analysis
|
Abstract: The electronic properties of
CaCuO
2
/
La
0.7
Sr
0.3
MnO
3
(LSMO) superlattices are determined by the electronic structure of the structural units and in particular their interfaces. The electronic structure of LSMO is governed by a metal-insulator transition, which is controlled by the thickness of the units and the sample temperature, resulting in a systematic downward band shift for metallic samples (i.e., thick LSMO units, low temperature). We present a systematic study of the changes in the valence-band structure and screening features in Mn
2
p
and Cu
2
p
core-level spectra. The results show that hybridization of Cu
3
d
orbitals with out-of-plane O
2
p
orbitals can be systematically tuned by controlling the band alignment at the interface via the metal-to-insulator transition of the LSMO units. This opens a new route to rational design of functional interfaces and control of orbital reconstructions.
|
Sep 2019
|
|
I09-Surface and Interface Structural Analysis
|
Jack E. N.
Swallow
,
Benjamin A. D.
Williamson
,
Sanjayan
Sathasivam
,
Max
Birkett
,
Thomas J.
Featherstone
,
Philip A. E.
Murgatroyd
,
Holly J.
Edwards
,
Zachary W.
Lebens-higgins
,
David A.
Duncan
,
Mark
Farnworth
,
Paul
Warren
,
Nianhua
Peng
,
Tien-lin
Lee
,
Louis F. J.
Piper
,
Anna
Regoutz
,
Claire J.
Carmalt
,
Ivan P.
Parkin
,
Vin R.
Dhanak
,
David O.
Scanlon
,
Tim D.
Veal
Diamond Proposal Number(s):
[18428]
Open Access
Abstract: Transparent conductors are a vital component of smartphones, touch-enabled displays, low emissivity windows and thin film photovoltaics. Tin-doped In2O3 (ITO) dominates the transparent conductive films market, accounting for the majority of the current multi-billion dollar annual global sales. Due to the high cost of indium, however, alternatives to ITO have been sought but have inferior properties. Here we demonstrate that molybdenum-doped In2O3 (IMO) has higher mobility and therefore higher conductivity than ITO with the same carrier density. This also results in IMO having increased infrared transparency compared to ITO of the same conductivity. These properties enable current performance to be achieved using thinner films, reducing the amount of indium required and raw material costs by half. The enhanced doping behavior arises from Mo 4d donor states being resonant high in the conduction band and negligibly perturbing the host conduction band minimum, in contrast to the adverse perturbation caused by Sn 5s dopant states. This new understanding will enable better and cheaper TCOs based on both In2O3 and other metal oxides.
|
Sep 2019
|
|
I09-Surface and Interface Structural Analysis
|
Diamond Proposal Number(s):
[21432]
Abstract: This work reports a systematical study on the relationship of electronic structure to oxygen evolution reaction (OER) activity of NixCo3-xO4 (x=0-1) mixed oxides. The specific OER activity is substantially increased by 16 times from 0.02 mA cm-2BET for pure Co3O4 to 0.32 mA cm-2BET for x=1 at an overpotential of 0.4 V and exhibits a strong correlation with the amount of Ni ions in +3 oxidation state. X-ray spectroscopic study reveals that inclusion of Ni3+ ions upshifts the occupied valence band maximum (VBM) by 0.27 eV toward the Fermi level (EF), and creates a new hole (unoccupied) state located ~1 eV above the EF. Such electronic features favour the adsorption of OH surface intermediates on NixCo3-xO4, resulting in enhanced OER. Furthermore, the emerging hole state effectively reduces the energy barrier for electron transfer from 1.19 eV to 0.39 eV, and thereby improves the kinetics for OER. The electronic structure features that lead to a higher OER in NixCo3-xO4 can be extended to other transition metal oxides for rational design of highly active catalysts.
|
Aug 2019
|
|
I09-Surface and Interface Structural Analysis
|
Diamond Proposal Number(s):
[16005]
Abstract: Zn
M
I
I
I
2
O
4
(
M
I
I
I
=
Co
, Rh, Ir) spinels have been recently identified as promising
p
-type semiconductors for transparent electronics. However, discrepancies exist in the literature regarding their fundamental optoelectronic properties. In this paper, the electronic structures of these spinels are directly investigated using soft/hard x-ray photoelectron and x-ray absorption spectroscopies in conjunction with density functional theory calculations. In contrast to previous results,
ZnCo
2
O
4
is found to have a small electronic band gap with forbidden optical transitions between the true band edges, allowing for both bipolar doping and high optical transparency. Furthermore, increased
d
−
d
splitting combined with a concomitant lowering of Zn
s
/
p
conduction states is found to result in a
ZnCo
2
O
4
(
ZCO
)
<
ZnRh
2
O
4
(
ZRO
)
≈
ZnIr
2
O
4
(
ZIO
)
band gap trend, finally resolving long-standing discrepancies in the literature.
|
Aug 2019
|
|
I09-Surface and Interface Structural Analysis
|
Abstract: We study
1
s
and
2
p
hard x-ray photoemission spectra (XPS) in a series of late transition metal oxides:
Fe
2
O
3
(
3
d
5
),
FeTiO
3
(
3
d
6
), CoO (
3
d
7
), and NiO (
3
d
8
). The experimental spectra are analyzed with two theoretical approaches:
MO
6
cluster model and local density approximation (LDA)
+
dynamical mean-field theory (DMFT). Owing to the absence of the core-valence multiplets and spin-orbit coupling,
1
s
XPS is found to be a sensitive probe of chemical bonding and nonlocal charge-transfer screening, providing complementary information to
2
p
XPS. The
1
s
XPS spectra are used to assess the accuracy of the ab initio
LDA
+
DMFT
approach, developed recently to study the material-specific charge-transfer effects in core-level XPS.
|
Aug 2019
|
|
I09-Surface and Interface Structural Analysis
|
Sebastian A.
Howard
,
Christopher N.
Singh
,
Galo J.
Paez
,
Matthew
Wahila
,
Linda W.
Wangoh
,
Shawn
Sallis
,
Keith
Tirpak
,
Yufeng
Liang
,
David
Prendergast
,
Mateusz
Zuba
,
Jatinkumar
Rana
,
Alex
Weidenbach
,
Timothy M.
Mccrone
,
Wanli
Yang
,
Tien-lin
Lee
,
Fanny
Rodolakis
,
William
Doolittle
,
Wei-cheng
Lee
,
Louis F. J.
Piper
Diamond Proposal Number(s):
[20647]
Open Access
Abstract: The discovery of analog LixNbO2 memristors revealed a promising new memristive mechanism wherein the diffusion of Li+ rather than O2− ions enables precise control of the resistive states. However, directly correlating lithium concentration with changes to the electronic structure in active layers remains a challenge and is required to truly understand the underlying physics. Chemically delithiated single crystals of LiNbO2 present a model system for correlating lithium variation with spectroscopic signatures from operando soft x-ray spectroscopy studies of device active layers. Using electronic structure modeling of the x-ray spectroscopy of LixNbO2 single crystals, we demonstrate that the intrinsic memristive behavior in LixNbO2 active layers results from field-induced degenerate p-type doping. We show that electrical operation of LixNbO2-based memristors is viable even at marginal Li deficiency and that the analog memristive switching occurs well before the system is fully metallic. This study serves as a benchmark for material synthesis and characterization of future LixNbO2-based memristor devices and suggests that valence change switching is a scalable alternative that circumvents the electroforming typically required for filamentary-based memristors.
|
Jul 2019
|
|
I09-Surface and Interface Structural Analysis
|
Matthew J.
Wahila
,
Galo
Paez
,
Christopher N.
Singh
,
Anna
Regoutz
,
Shawn
Sallis
,
Mateusz J.
Zuba
,
Jatinkumar
Rana
,
M. Brooks
Tellekamp
,
Jos E.
Boschker
,
Toni
Markurt
,
Jack E. N.
Swallow
,
Leanne A. H.
Jones
,
Tim D.
Veal
,
Wanli
Yang
,
Tien-lin
Lee
,
Fanny
Rodolakis
,
Jerzy T.
Sadowski
,
David
Prendergast
,
Wei-cheng
Lee
,
W. Alan
Doolittle
,
Louis F. J.
Piper
Diamond Proposal Number(s):
[20647, 21430]
Abstract: The metal-insulator transition of
NbO
2
is thought to be important for the functioning of recent niobium oxide-based memristor devices, and is often described as a Mott transition in these contexts. However, the actual transition mechanism remains unclear, as current devices actually employ electroformed
NbO
x
that may be inherently different to crystalline
NbO
2
. We report on our synchrotron x-ray spectroscopy and density-functional-theory study of crystalline, epitaxial
NbO
2
thin films grown by pulsed laser deposition and molecular beam epitaxy across the metal-insulator transition at
∼
810
∘
C
. The observed spectral changes reveal a second-order Peierls transition driven by a weakening of Nb dimerization without significant electron correlations, further supported by our density-functional-theory modeling. Our findings indicate that employing crystalline
NbO
2
as an active layer in memristor devices may facilitate analog control of the resistivity, whereby Joule-heating can modulate Nb-Nb dimer distance and consequently control the opening of a pseudogap.
|
Jul 2019
|
|
I09-Surface and Interface Structural Analysis
|
Z. H.
Lim
,
N. F.
Quackenbush
,
A. N.
Penn
,
M.
Chrysler
,
M.
Bowden
,
Z.
Zhu
,
J. M.
Ablett
,
T.-l.
Lee
,
J. M.
Lebeau
,
J. C.
Woicik
,
P. V.
Sushko
,
S. A.
Chambers
,
J. H.
Ngai
Diamond Proposal Number(s):
[17449]
Abstract: We report charge transfer and built-in electric fields across the epitaxial
SrNb
x
Ti
1
−
x
O
3
−
δ
/
Si
(
001
)
interface. Electrical transport measurements indicate the formation of a hole gas in the Si and the presence of built-in fields. Hard x-ray photoelectron measurements reveal pronounced asymmetries in core-level spectra that arise from these built-in fields. Theoretical analysis of core-level spectra enables built-in fields and the resulting band bending to be spatially mapped across the heterojunction. The demonstration of tunable charge transfer, built-in fields, and the spatial mapping of the latter, lays the groundwork for the development of electrically coupled, functional heterojunctions.
|
Jul 2019
|
|
I09-Surface and Interface Structural Analysis
|
Zachary W.
Lebens-higgins
,
Nicholas V.
Faenza
,
Maxwell D.
Radin
,
Hao
Liu
,
Shawn
Sallis
,
Jatinkumar
Rana
,
Julija
Vinckeviciute
,
Philip J.
Reeves
,
Mateusz
Zuba
,
Fadwa
Badway
,
Nathalie
Pereira
,
Karena W.
Chapman
,
Tien-lin
Lee
,
Tianpin
Wu
,
Clare P.
Grey
,
Brent
Melot
,
Anton
Van Der Ven
,
Glenn G.
Amatucci
,
Wanli
Yang
,
Louis F. J.
Piper
Diamond Proposal Number(s):
[19162]
Open Access
Abstract: Oxygen participation, arising from increased transition metal–oxygen covalency during delithiation, is considered essential for the description of charge compensation in conventional layered oxides. The advent of high-resolution mapping of the O K-edge resonant inelastic X-ray scattering (RIXS) provides an opportunity to revisit the onset and extent of oxygen participation. Combining RIXS with an array of structural and electronic probes for the family of Ni-rich LiNi0.8Co0.2−yAlyO2 cathodes, we identify common charge compensation regimes that are assigned to formal transition metal redox (<4.25 V) and oxygen participation through covalency (>4.25 V). From O K-edge RIXS maps, we find the emergence of a sharp RIXS feature in these systems when approaching full delithiation, which has previously been associated with lattice oxidized oxygen in alkali-rich systems. The lack of transition metal redox signatures and strong covalency at these high degrees of delithiation suggest this RIXS feature is similarly attributed to lattice oxygen charge compensation as in the alkali-rich systems. The RIXS feature's evolution with state of charge in conventional layered oxides is evidence that this feature reflects the depopulation of occupied O 2p states associated with oxygen participation.
|
Jul 2019
|
|
I09-Surface and Interface Structural Analysis
|
Tomáš
Rauch
,
Victor A.
Rogalev
,
Maximilian
Bauernfeind
,
Julian
Maklar
,
Felix
Reis
,
Florian
Adler
,
Simon
Moser
,
Johannes
Weis
,
Tien-lin
Lee
,
Pardeep K.
Thakur
,
Jörg
Schäfer
,
Ralph
Claessen
,
Jürgen
Henk
,
Ingrid
Mertig
Diamond Proposal Number(s):
[19512]
Abstract: The diamond and zinc-blende semiconductors are well-known and have been widely studied for decades. Yet, their electronic structure still surprises with unexpected topological properties of the valence bands. In this joint theoretical and experimental investigation, we demonstrate for the benchmark compounds InSb and GaAs that the electronic structure features topological surface states below the Fermi energy. Our parity analysis shows that the spin-orbit split-off band near the valence band maximum exhibits a strong topologically nontrivial behavior characterized by the
Z
2
invariants
(
1
;
000
)
. The nontrivial character is a consequence of the nonzero spin-orbit coupling and is imposed by the chosen constituents, in contrast to the conventional topological phase transition mechanism which relies on tuning parameters in the system Hamiltonian. Ab initio-based tight-binding calculations resolve topological surface states in the occupied electronic structure of InSb and GaAs, further confirmed experimentally by soft x-ray angle-resolved photoemission from both materials. Our findings are valid for all other materials whose valence bands are adiabatically linked to those of InSb, i.e., many diamond and zinc-blende semiconductors, as well as other related materials, such as half-Heusler compounds.
|
Jun 2019
|
|
