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Instruments / Technical Area	Publication Details	Published	Actions
I07-Surface & interface diffraction	Electronic structure of low-temperature solution-processed amorphous metal oxide semiconductors for thin-film transistor applications Josephine Socratous , Kulbinder K. Banger , Yana Vaynzof , Aditya Sadhanala , Adam D. Brown , Alessandro Sepe , Ullrich Steiner , Henning Sirringhaus Advanced Functional Materials 25 (12), 1873 - 1885 DOI: 10.1002/adfm.201404375 Diamond Proposal Number(s): [8657] Open Access Show Abstract ▼ Abstract: The electronic structure of low temperature, solution-processed indium–zinc oxide thin-film transistors is complex and remains insufficiently understood. As commonly observed, high device performance with mobility >1 cm2 V−1 s−1 is achievable after annealing in air above typically 250 °C but performance decreases rapidly when annealing temperatures ≤200 °C are used. Here, the electronic structure of low temperature, solution-processed oxide thin films as a function of annealing temperature and environment using a combination of X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and photothermal deflection spectroscopy is investigated. The drop-off in performance at temperatures ≤200 °C to incomplete conversion of metal hydroxide species into the fully coordinated oxide is attributed. The effect of an additional vacuum annealing step, which is beneficial if performed for short times at low temperatures, but leads to catastrophic device failure if performed at too high temperatures or for too long is also investigated. Evidence is found that during vacuum annealing, the workfunction increases and a large concentration of sub-bandgap defect states (re)appears. These results demonstrate that good devices can only be achieved in low temperature, solution-processed oxides if a significant concentration of acceptor states below the conduction band minimum is compensated or passivated by shallow hydrogen and oxygen vacancy-induced donor levels.	Mar 2015

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I07-Surface & interface diffraction

Electronic structure of low-temperature solution-processed amorphous metal oxide semiconductors for thin-film transistor applications

Josephine Socratous , Kulbinder K. Banger , Yana Vaynzof , Aditya Sadhanala , Adam D. Brown , Alessandro Sepe , Ullrich Steiner , Henning Sirringhaus

Advanced Functional Materials 25 (12), 1873 - 1885

DOI: 10.1002/adfm.201404375

Diamond Proposal Number(s): [8657]