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Instruments / Technical Area	Publication Details	Published	Actions
I13-1-Coherence	Improved tungsten nanofabrication for hard X-ray zone plates Karolis Parfeniukas , Jussi Rahomaki , Stylianos Giakoumidis , Frank Seiboth , Felix Wittwer , Christian G. Schroer , Ulrich Vogt Microelectronic Engineering 152, 6 - 9 DOI: 10.1016/j.mee.2015.12.015 Diamond Proposal Number(s): [12046] Open Access Show Abstract ▼ Abstract: We present an improved nanofabrication method of high aspect ratio tungsten structures for use in high efficiency nanofocusing hard X-ray zone plates. A ZEP 7000 electron beam resist layer used for patterning is cured by a second, much larger electron dose after development. The curing step improves pattern transfer fidelity into a chromium hard mask by reactive ion etching using Cl2/O2 chemistry. The pattern can then be transferred into an underlying tungsten layer by another reactive ion etching step using SF6/O2. A 630 nm-thick tungsten zone plate with smallest line width of 30 nm was fabricated using this method and characterized. At 8.2 keV photon energy the device showed an efficiency of 2.2% with a focal spot size at the diffraction limit, measured at Diamond Light Source I-13-1 beamline.	Feb 2016
	A novel and reliable approach for controlling silicon membrane thickness with smooth surface Yijie Li , Yifang Chen , Hongchang Wang , Xujie Tong , Chengyang Mu , Jun Zhao Microelectronic Engineering 3 DOI: 10.1016/j.mee.2021.111640 Show Abstract ▼ Abstract: Despite self-supporting ultrathin Si membranes are already being widely applied, its thickness control in micron scale still remains a big challenge for delicate systems such as micro-opto-electro-mechanical systems and silicon-based X-ray diffractive optics. Instead of using the conventional wet etch rate of Si to monitor the membrane thickness, this work has developed a reliable approach to control the membrane thickness in the precision of micrometer order by using an optical detection hole with high precision depth, which decides the membrane thickness in the Si thinning process. The wet etch rate is first optimized to ensure the fundamental condition for such a thickness control. Furthermore, the membrane surface roughness is greatly reduced by optimizing the additive ethanol concentration in the KOH etchant, based on the investigation results for the origin of the membrane surface roughness. Using the proposed etching and thickness-monitoring method, self-supporting micron thick Si (100) membranes with the surface roughness of <15 nm have been successfully fabricated.	Oct 2021

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