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I09-Surface and Interface Structural Analysis	Computational prediction and experimental realization of earth-abundant transparent conducting oxide Ga-doped ZnSb2O6 Adam J. Jackson , Benjamin J. Parrett , Joe Willis , Alex M. Ganose , W. W. Winnie Leung , Yuhan Liu , Benjamin A. D. Williamson , Timur K. Kim , Moritz Hoesch , Larissa S. I. Veiga , Raman Kalra , Jens Neu , Charles A. Schmuttenmaer , Tien-Lin Lee , Anna Regoutz , Tung-Chun Lee , Tim D. Veal , Robert G. Palgrave , Robin Perry , David O. Scanlon Acs Energy Letters DOI: 10.1021/acsenergylett.2c01961 Diamond Proposal Number(s): [24449] Open Access Show Abstract ▼ Abstract: Transparent conducting oxides have become ubiquitous in modern optoelectronics. However, the number of oxides that are transparent to visible light and have the metallic-like conductivity necessary for applications is limited to a handful of systems that have been known for the past 40 years. In this work, we use hybrid density functional theory and defect chemistry analysis to demonstrate that tri-rutile zinc antimonate, ZnSb2O6, is an ideal transparent conducting oxide and to identify gallium as the optimal dopant to yield high conductivity and transparency. To validate our computational predictions, we have synthesized both powder samples and single crystals of Ga-doped ZnSb2O6 which conclusively show behavior consistent with a degenerate transparent conducting oxide. This study demonstrates the possibility of a family of Sb(V)-containing oxides for transparent conducting oxide and power electronics applications.	Oct 2022

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