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Instruments / Technical Area	Publication Details	Published	Actions
I09-Surface and Interface Structural Analysis	Approaching truly freestanding graphene: the structure of hydrogen-intercalated graphene on 6H−SiC(0001) J. Sforzini , L. Nemec , T. Denig , B. Stadtmüller , T. L Lee , C. Kumpf , S. Soubatch , U. Starke , P. Rinke , V. Blum , F. Bocquet , S. Tautz Physical Review Letters 114, 106804 DOI: 10.1103/PhysRevLett.114.106804 PMID: 25815955 Diamond Proposal Number(s): [8449, 10271] Open Access Show Abstract ▼ Abstract: We measure the adsorption height of hydrogen-intercalated quasifreestanding monolayer graphene on the (0001) face of 6H silicon carbide by the normal incidence x-ray standing wave technique. A density functional calculation for the full ð6 ffiffiffi 3 p × 6 ffiffiffi 3 p Þ-R30° unit cell, based on a van derWaals corrected exchange correlation functional, finds a purely physisorptive adsorption height in excellent agreement with experiments, a very low buckling of the graphene layer, a very homogeneous electron density at the interface, and the lowest known adsorption energy per atom for graphene on any substrate.Astructural comparison to other graphenes suggests that hydrogen-intercalated graphene on 6H-SiCð0001Þ approaches ideal graphene.	Mar 2015
I09-Surface and Interface Structural Analysis	Structural and electronic properties of nitrogen-doped graphene J. Sforzini , P. Hapala , M. Franke , G. Van Straaten , A. Stöhr , S. Link , S. Soubatch , P. Jelínek , T.-L. Lee , U. Starke , M. Švec , F. Bocquet , S. Tautz Physical Review Letters 116 DOI: 10.1103/PhysRevLett.116.126805 Diamond Proposal Number(s): [10271] Open Access Show Abstract ▼ Abstract: We investigate the structural and electronic properties of nitrogen-doped epitaxial monolayer graphene and quasifreestanding monolayer graphene on 6H-SiCð0001Þ by the normal incidence x-ray standing wave technique and by angle-resolved photoelectron spectroscopy supported by density functional theory simulations. With the location of various nitrogen species uniquely identified, we observe that for the same doping procedure, the graphene support, consisting of substrate and interface, strongly influences the structural as well as the electronic properties of the resulting doped graphene layer. Compared to epitaxial graphene, quasifreestanding graphene is found to contain fewer nitrogen dopants. However, this lack of dopants is compensated by the proximity of nitrogen atoms at the interface that yield a similar number of charge carriers in graphene.	Mar 2016

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