I09-Surface and Interface Structural Analysis
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B. F.
Spencer
,
S.
Maniyarasu
,
B.
Reed
,
D. J. H.
Cant
,
R.
Ahumada-Lazo
,
A. G.
Thomas
,
C. A.
Muryn
,
M.
Maschek
,
S. K.
Eriksson
,
T.
Wiell
,
T.-L.
Lee
,
S.
Tougaard
,
A. G.
Shard
,
W. R.
Flavell
Diamond Proposal Number(s):
[20059]
Abstract: Hard X-ray Photoelectron Spectroscopy (HAXPES) provides minimally destructive depth profiling into the bulk, extending the photoelectron sampling depth. Detection of deeply buried layers beyond the elastic limit is enabled through inelastic background analysis. To test the robustness of this technique, we present results on a thin (18 nm) layer of buried metal-organic complex buried below up to 200 nm of organic material. Overlayers with thicknesses 25-140 nm were measured using photon energies ranging 6-10 keV at the I09 end station at Diamond Light Source, and a new fixed energy Ga Kα (9.25 keV) laboratory-based HAXPES spectrometer was also used to measure samples with overlayers up to 200 nm thick. The sampling depth was varied: at Diamond Light Source by changing the photon energy, and in the lab system by performing angle-resolved measurements. For all the different overlayers and sampling depths, inelastic background modelling consistently provided thicknesses which agreed, within reasonable error, with the ellipsometric thickness. Relative sensitivity factors were calculated, and these factors consistently provided reasonable agreement with the expected nominal stoichiometry, suggesting the calculation method can be extended to any element. These results demonstrate the potential for the characterisation of deeply buried layers using synchrotron and laboratory-based HAXPES.
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Dec 2020
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I09-Surface and Interface Structural Analysis
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Jack E. N.
Swallow
,
Christian
Vorwerk
,
Piero
Mazzolini
,
Patrick
Vogt
,
Oliver
Bierwagen
,
Alexander
Karg
,
Martin
Eickhoff
,
Jörg
Schörmann
,
Markus R.
Wagner
,
Joseph William
Roberts
,
Paul R.
Chalker
,
Matthew J.
Smiles
,
Philip
Murgatroyd
,
Sara
Mohamed
,
Zachary W.
Lebens-Higgins
,
Louis F. J.
Piper
,
Leanne A. H.
Jones
,
Pardeep K.
Thakur
,
Tien-Lin
Lee
,
Joel B.
Varley
,
Juergen
Furthmüller
,
Claudia
Draxl
,
Tim D.
Veal
,
Anna
Regoutz
Diamond Proposal Number(s):
[21430, 24670]
Abstract: The search for new wide band gap materials is intensifying to satisfy the need for more advanced and energy effcient power electronic devices. Ga2O3 has emerged as an alternative to SiC and GaN, sparking a renewed interest in its fundamental properties beyond the main β-phase. Here, three polymorphs of Ga2O3, α, β, and ε, are investigated using X-ray diffraction, X-ray photoelectron and absorption spectroscopy, and ab initio theoretical approaches to gain insights into their structure - electronic structure relationships. Valence and conduction electronic structure as well as semi-core and core states are probed, providing a complete picture of the influence of local coordination environments on the electronic structure. State-of-the-art electronic structure theory, including all-electron density functional theory and many-body perturbation theory, provide detailed understanding of the spectroscopic results. The calculated spectra provide very accurate descriptions of all experimental spectra and additionally illuminate the origin of observed spectral features. This work provides a strong basis for the exploration of the Ga2O3 polymorphs as materials at the heart of future electronic device generations.
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Sep 2020
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I09-Surface and Interface Structural Analysis
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Anna
Regoutz
,
Alex M.
Ganose
,
Lars
Blumenthal
,
Christoph
Schlueter
,
Tien-Lin
Lee
,
Gregor
Kieslich
,
Anthony K.
Cheetham
,
Gwilherm
Kerherve
,
Ying-Sheng
Huang
,
Ruei-San
Chen
,
Giovanni
Vinai
,
Tommaso
Pincelli
,
Giancarlo
Panaccione
,
Kelvin H. L.
Zhang
,
Russell G.
Egdell
,
Johannes
Lischner
,
David O.
Scanlon
,
David J.
Payne
Diamond Proposal Number(s):
[12673]
Abstract: Theory and experiment are combined to gain an understanding of the electronic properties of OsO2, a poorly studied metallic oxide that crystallizes in the rutile structure. Hard and soft valence-band x-ray photoemission spectra of OsO2 single crystals are in broad agreement with the results of density-functional-theory calculations, aside from a feature shifted to high binding energy of the conduction band. The energy shift corresponds to the conduction electron plasmon energy measured by reflection electron energy loss spectroscopy. The plasmon satellite is reproduced by many-body perturbation theory.
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Feb 2019
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I09-Surface and Interface Structural Analysis
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Matthias
Franke
,
Daniel
Wechsler
,
Quratulain
Tariq
,
Michael
Röckert
,
Liang
Zhang
,
Pardeep
Kumar Thakur
,
Nataliya
Tsud
,
Sofiia
Bercha
,
Kevin Charles
Prince
,
Tien-Lin
Lee
,
Hans-Peter
Steinruck
,
Ole
Lytken
Abstract: We have investigated the interactions between cobalt(II)-tetraphenylporphyrin (CoTPP) molecules and MgO(100) thin films on Ag(100) by means of Synchrotron Radiation X-Ray and Ultra-Violet Photoelectron Spectroscopy (SR-XPS and SR-UPS). At room temperature, the CoTPP monolayer consists of two different species. A minority of molecules exhibits a strong electronic interaction with the substrate, whereas for the majority a similar spectroscopic signature as for multilayer molecules is observed. Based on the lateral inhomogeneity of the surface electronic structure, we tentatively suggest that the strongly interacting molecules adsorb with their metal center directly above oxygen ions. Unlike for metal substrates, where a monolayer can be prepared upon heating to above 500 K, most of the monolayer on MgO desorbs at 550 K together with the multilayers. This indicates either a weaker molecule-substrate bond than for most metal surfaces or a higher activation energy barrier for dehydrogenation. The remaining molecules are presumably MgTPP molecules, originating from a 2HTPP impurity in CoTPP.
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Apr 2017
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I09-Surface and Interface Structural Analysis
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Theodore D. C.
Hobson
,
Laurie J
Phillips
,
Oliver S
Hutter
,
Huw
Shiel
,
Jack E. N.
Swallow
,
Christopher N.
Savory
,
Pabitra K
Nayak
,
Silvia
Mariotti
,
Bhaskar
Das
,
Leon
Bowen
,
Leanne A. H.
Jones
,
Thomas J.
Featherstone
,
Matthew J.
Smiles
,
Mark A
Farnworth
,
Guillaume
Zoppi
,
Pardeep K.
Thakur
,
Tien-Lin
Lee
,
Henry J.
Snaith
,
Chris
Leighton
,
David O.
Scanlon
,
Vinod R.
Dhanak
,
Ken
Durose
,
Tim D.
Veal
,
Jonathan D
Major
Diamond Proposal Number(s):
[21431]
Open Access
Abstract: The carrier type of Sb2Se3 was evaluated for both thin films and bulk crystals via a range of complementary techniques. X-ray photoelectron spectroscopy (XPS), hot-probe, hall effect and surface photo-voltage spectroscopy showed material synthesized from Sb2Se3 granulate mate-rial to be n-type with chlorine identified as an unintentional n-type dopant via secondary ion mass spectrometry analysis. The validity of chlorine as a dopant was con-firmed by synthesis of intrinsic crystals from metallic precursors and subsequent n-type doping by the addition of MgCl2. Chlorine was also shown to be a substitutional n-type shallow dopant by density functional theory calculations. TiO2/Sb2Se3 n-n isotype heterojunction solar cells of 7.3% efficiency based are demonstrated with band alignment analyzed via XPS.
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Mar 2020
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I09-Surface and Interface Structural Analysis
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Diamond Proposal Number(s):
[17449]
Abstract: The electronic properties of epitaxial heterojunctions consisting of the prototypical perovskite oxide semiconductor,
n
−
SrTiO
3
, and the high-mobility Group IV semiconductor
p
-Ge have been investigated. Hard x-ray photoelectron spectroscopy with a new method of analysis has been used to determine band alignment while at the same time quantifying a large built-in potential found to be present within the Ge. Accordingly, the built-in potential within the Ge has been mapped in a layer-resolved fashion. Electron transfer from donors in the
n
−
SrTi
O
3
to the
p
-Ge creates a space-charge region in the Ge resulting in downward band bending, which spans most of the Ge gap. This strong downward band bending facilitates visible light, photogenerated electron transfer from Ge to STO, favorable to drive the hydrogen evolution reaction associated with water splitting. Ti 2p and
Sr
3
d
core-level line shapes reveal that the STO bands are flat despite the space-charge layer therein. Inclusion of the effect of Ge band bending on band alignment is significant, amounting to a
∼
0.4
eV
reduction in valence band offset compared to the value resulting from using spectra averaged over all layers. Density functional theory allows candidate interface structural models deduced from scanning transmission electron microscopy images to be simulated and structurally optimized. These structures are used to generate multislice simulations that reproduce the experimental images quite well. The calculated band offsets for these structures are in good agreement with experiment.
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Sep 2018
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I09-Surface and Interface Structural Analysis
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C.
Kalha
,
L. E.
Ratcliff
,
J. J. Gutiérrez
Moreno
,
S.
Mohr
,
M.
Mantsinen
,
N. K.
Fernando
,
P. K.
Thakur
,
T.-L.
Lee
,
H.-H.
Tseng
,
T. S.
Nunney
,
J. M.
Kahk
,
J.
Lischner
,
A.
Regoutz
Diamond Proposal Number(s):
[27164]
Abstract: Tungsten (W) is an important and versatile transition metal and has a firm place at the heart of many technologies. A popular experimental technique for the characterization of tungsten and tungsten-based compounds is x-ray photoelectron spectroscopy (XPS), which enables the assessment of chemical states and electronic structure through the collection of core level and valence band spectra. However, in the case of tungsten metal, open questions remain regarding the origin, nature, and position of satellite features that are prominent in the photoelectron spectrum. These satellites are a fingerprint of the electronic structure of the material and have not been thoroughly investigated, at times leading to their misinterpretation. The present work combines high-resolution soft and hard x-ray photoelectron spectroscopy (SXPS and HAXPES) with reflected electron energy loss spectroscopy (REELS) and a multitiered ab initio theoretical approach, including density functional theory (DFT) and many-body perturbation theory (G0W0 and
GW
+
C
), to disentangle the complex set of experimentally observed satellite features attributed to the generation of plasmons and interband transitions. This combined experiment-theory strategy is able to uncover previously undocumented satellite features, improving our understanding of their direct relationship to tungsten's electronic structure. Furthermore, it lays the groundwork for future studies into tungsten-based mixed-metal systems and holds promise for the reassessment of the photoelectron spectra of other transition and post-transition metals, where similar questions regarding satellite features remain.
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Jan 2022
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I09-Surface and Interface Structural Analysis
|
Diamond Proposal Number(s):
[9012, 12558]
Abstract: We study the effect of alkali metal intercalation (Cs and Li) on the geometry of graphene on Ir(111) using the x-ray standing waves technique. For both alkali metals, the increase in the mean height of the carbon layer does not depend on the lateral structure or the density of the intercalated layer. For Li, full delamination of graphene from the metal substrate is found already for a small amount of intercalant. Even though Lithium lifts graphene to a smaller height, it is much more efficient in ironing out the corrugation of pristine graphene on Ir(111).
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May 2019
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I06-Nanoscience
|
Dong
Li
,
Bonan
Zhu
,
Dirk
Backes
,
Larissa S. I.
Veiga
,
Tien-Lin
Lee
,
Hongguang
Wang
,
Qian
He
,
Pinku
Roy
,
Jiaye
Zhang
,
Jueli
Shi
,
Aiping
Chen
,
Peter A.
Van Aken
,
Quanxi
Jia
,
Sarnjeet S.
Dhesi
,
David O.
Scanlon
,
Kelvin H. L.
Zhang
,
Weiwei
Li
Diamond Proposal Number(s):
[25425, 26901, 29616]
Abstract: Strain engineering of epitaxial transition metal oxide heterostructures offers an intriguing opportunity to control electronic structures by modifying the interplay between spin, charge, orbital, and lattice degrees of freedom. Here, we demonstrate that the electronic structure, magnetic and transport properties of
La
0.9
Ba
0.1
MnO
3
thin films can be effectively controlled by epitaxial strain. Spectroscopic studies and first-principles calculations reveal that the orbital occupancy in Mn
e
g
orbitals can be switched from the
d
3
z
2
−
r
2
orbital to the
d
x
2
−
y
2
orbital by varying the strain from compressive to tensile. The change of orbital occupancy associated with Mn
3
d
-O
2
p
hybridization leads to dramatic modulation of the magnetic and electronic properties of strained
La
0.9
Ba
0.1
MnO
3
thin films. Under moderate tensile strain, an emergent ferromagnetic insulating state with an enhanced ferromagnetic Curie temperature of 215 K is achieved. These findings not only deepen our understanding of electronic structures, magnetic and transport properties in the
La
0.9
Ba
0.1
MnO
3
system, but also demonstrate the use of epitaxial strain as an effective knob to tune the electronic structures and related physical properties for potential spintronic device applications.
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Apr 2022
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I09-Surface and Interface Structural Analysis
|
Diamond Proposal Number(s):
[25582]
Abstract: The electronic structures of semiconducting heterojunctions are critically dependent on composition including the presence and concentrations of dopants, both intended and unintended. Dopant profiles in the interfacial region can have major effects on band energies which in turn drive transport properties. Here we use core-level photoelectron line shapes excited with hard x rays to extract information about electric fields resulting from internal charge transfer in epitaxial
La
0.03
Sr
0.97
Zr
x
Ti
1
–
x
O
3
/
Ge
(
001
)
(
0.1
≤
x
≤
0.7
)
heterostructures. Experiments were carried out for heterojunctions involving both
n
- and
p
-type Ge substrates. These heterojunctions were not amenable to electronic characterization of all regions by transport measurements because the doped substrates act as electrical shunts, precluding probing the more resistive films and masking interface conductivity. However, the core-level line shapes were found to be a rich source of information on built-in potentials that exist throughout the heterostructure, and yielded valuable insight into the impact of band bending on band alignment at the buried interfaces. The electronic effects expected for Ge with uniform
n
- and
p
-type doping are eclipsed by those of unintended oxygen dopants in the Ge near the interface. This study illustrates the power of hard x-ray photoemission spectroscopy and related modeling to determine electronic structure in material systems for which insight from traditional transport measurements is limited.
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Jan 2022
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