I09-Surface and Interface Structural Analysis
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Diamond Proposal Number(s):
[24219, 31681]
Abstract: Wide bandgap oxide semiconductors have gained significant attention in the fields from flat panel displays to solar cells, but their uses have been limited by the lack of high mobility p-type oxide semiconductors. Recently, β-phase TeO2 has been identified as a promising p-type oxide semiconductor with exceptional device performance. In this Letter, we report on the electronic structure of β-TeO2 studied by a combination of high-resolution x-ray spectroscopy and hybrid density functional theory calculations. The bulk bandgap of β-TeO2 is determined to be 3.7 eV. Direct comparisons between experimental and computational results demonstrate that the top of a valence band (VB) of β-TeO2 is composed of the hybridized Te 5s, Te 5p, and O 2p states, whereas a conduction band (CB) is dominated by unoccupied Te 5p states. The hybridization between spatially dispersive Te 5s2 states and O 2p orbitals helps us to alleviate the strong localization in the VB, leading to small hole effective mass and high hole mobility in β-TeO2. The Te 5p states provide stabilizing effect to the hybridized Te 5s-O 2p states, which is enabled by structural distortions of a β-TeO2 lattice. The multiple advantages of large bandgap, high hole mobility, two-dimensional structure, and excellent stability make β-TeO2 a highly competitive material for next-generation opto-electronic devices.
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Mar 2023
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I09-Surface and Interface Structural Analysis
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Diamond Proposal Number(s):
[21897]
Open Access
Abstract: Preparing aqueous silicon slurries in presence of a low-pH buffer improves the cycle life of silicon electrodes considerably because of higher reversibility of the alloying process and higher resilience towards volume changes during (de)alloying. While the positive effects of processing at low pH have been demonstrated repeatedly, there are gaps in understanding of the buffer's role during the slurry preparation and the effect of buffer residues within the electrode during cycling. This study uses a combination of soft and hard X-ray photoelectron spectroscopy (SOXPES/HAXPES) to investigate the silicon particle interface after aqueous processing in both pH-neutral and citrate-buffered environments. Further, silicon electrodes are investigated after ten cycles in half-cells to identify the processing-dependant differences in the surface layer composition. By tuning the excitation energy between 100 eV and 7080 eV, a wide range of XPS probing depths were sampled to vertically map the electrode surface from top to bulk. The results demonstrate that the citrate-buffer becomes an integral part of the surface layer on Si particles and is, together with the electrode binder, part of an artificial solid-electrolyte interphase that is created during the electrode preparation and drying.
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Feb 2023
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I09-Surface and Interface Structural Analysis
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Leanne A. H.
Jones
,
Zongda
Xing
,
Jack E. N.
Swallow
,
Huw
Shiel
,
Thomas J.
Featherstone
,
Matthew J.
Smiles
,
Nicole
Fleck
,
Pardeep K.
Thakur
,
Tien-Lin
Lee
,
Laurence J.
Hardwick
,
David O.
Scanlon
,
Anna
Regoutz
,
Tim D.
Veal
,
Vinod R.
Dhanak
Diamond Proposal Number(s):
[25980]
Open Access
Abstract: A comprehensive study of bulk molybdenum dichalcogenides is presented with the use of soft and hard X-ray photoelectron (SXPS and HAXPES) spectroscopy combined with hybrid density functional theory (DFT). The main core levels of MoS2, MoSe2, and MoTe2 are explored. Laboratory-based X-ray photoelectron spectroscopy (XPS) is used to determine the ionization potential (IP) values of the MoX2 series as 5.86, 5.40, and 5.00 eV for MoSe2, MoSe2, and MoTe2, respectively, enabling the band alignment of the series to be established. Finally, the valence band measurements are compared with the calculated density of states which shows the role of p-d hybridization in these materials. Down the group, an increase in the p-d hybridization from the sulfide to the telluride is observed, explained by the configuration energy of the chalcogen p orbitals becoming closer to that of the valence Mo 4d orbitals. This pushes the valence band maximum closer to the vacuum level, explaining the decreasing IP down the series. High-resolution SXPS and HAXPES core-level spectra address the shortcomings of the XPS analysis in the literature. Furthermore, the experimentally determined band alignment can be used to inform future device work.
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Dec 2022
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I09-Surface and Interface Structural Analysis
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Diamond Proposal Number(s):
[127494]
Abstract: Conventional cathodes for Li-ion batteries are layered transition-metal oxides that support Li+ intercalation charge-balanced by redox on the transition metals. Oxidation beyond one electron per transition metal can be achieved in Li-rich layered oxides by involving structural anions, which necessitates high voltages and complex charge compensation mechanisms convoluted by degradation reactions. We report a detailed structural and spectroscopic analysis of the multielectron material Li2Ru0.3Mn0.7O3, chosen due to its low Ru content. Ex situ and operando spectroscopic data over multiple cycles highlight the changing charge compensation mechanism. Notably, over half of the first-cycle capacity is attributed to O2 gas evolution and reversible O redox is minimal. Instead, reduced Ru and Mn species are detected in the bulk and on the surface, which then increasingly contribute to charge compensation as more metal reduction occurs with cycling. Permanent structural changes linked to metal migration are observed with EXAFS and Raman analysis.
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Dec 2022
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I09-Surface and Interface Structural Analysis
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Diamond Proposal Number(s):
[25807]
Open Access
Abstract: Understanding the chemical composition and morphological evolution of the solid electrolyte interphase (SEI) formed at the interface between the lithium metal electrode and an inorganic solid-state electrolyte is crucial for developing reliable all-solid-state lithium batteries. To better understand the interaction between these cell components, we carry out X-ray photoemission spectroscopy (XPS) measurements during lithium plating on the surface of a Li6PS5Cl solid-state electrolyte pellet using an electron beam. The analyses of the XPS data highlight the role of Li plating current density on the evolution of a uniform and ionically conductive (i.e., Li3P-rich) SEI capable of decreasing the electrode∣solid electrolyte interfacial resistance. The XPS findings are validated via electrochemical impedance spectrsocopy measurements of all-solid-state lithium-based cells.
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Nov 2022
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I09-Surface and Interface Structural Analysis
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Diamond Proposal Number(s):
[23159, 26551]
Open Access
Abstract: The pursuit of new and better battery materials has given rise to numerous studies of the possibilities to use two-dimensional negative electrode materials, such as MXenes, in lithium-ion batteries. Nevertheless, both the origin of the capacity and the reasons for significant variations in the capacity seen for different MXene electrodes still remain unclear, even for the most studied MXene: Ti3C2Tx. Herein, freestanding Ti3C2Tx MXene films, composed only of Ti3C2Tx MXene flakes, are studied as additive-free negative lithium-ion battery electrodes, employing lithium metal half-cells and a combination of chronopotentiometry, cyclic voltammetry, X-ray photoelectron spectroscopy, hard X-ray photoelectron spectroscopy, and X-ray absorption spectroscopy experiments. The aim of this study is to identify the redox reactions responsible for the observed reversible and irreversible capacities of Ti3C2Tx-based lithium-ion batteries as well as the reasons for the significant capacity variation seen in the literature. The results demonstrate that the reversible capacity mainly stems from redox reactions involving the Tx–Ti–C titanium species situated on the surfaces of the MXene flakes, whereas the Ti–C titanium present in the core of the flakes remains electro-inactive. While a relatively low reversible capacity is obtained for electrodes composed of pristine Ti3C2Tx MXene flakes, significantly higher capacities are seen after having exposed the flakes to water and air prior to the manufacturing of the electrodes. This is ascribed to a change in the titanium oxidation state at the surfaces of the MXene flakes, resulting in increased concentrations of Ti(II), Ti(III), and Ti(IV) in the Tx–Ti–C surface species. The significant irreversible capacity seen in the first cycles is mainly attributed to the presence of residual water in the Ti3C2Tx electrodes. As the capacities of Ti3C2Tx MXene negative electrodes depend on the concentration of Ti(II), Ti(III), and Ti(IV) in the Tx–Ti–C surface species and the water content, different capacities can be expected when using different manufacturing, pretreatment, and drying procedures.
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Nov 2022
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I09-Surface and Interface Structural Analysis
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Diamond Proposal Number(s):
[24219, 31069]
Abstract: Ga
2
O
3
is emerging as a promising wide band-gap semiconductor for high-power electronics and deep ultraviolet optoelectronics. It is highly desirable to dope it with controllable carrier concentrations for different device applications. This work reports a combined photoemission spectroscopy and theoretical calculation study on the electronic structure of Si doped
Ga
2
O
3
films with carrier concentration varying from
4.6
×
10
18
c
m
−
3
to
2.6
×
10
20
c
m
−
3
. Hard x-ray photoelectron spectroscopy was used to directly measure the widening of the band gap as a result of occupation of conduction band and band-gap renormalization associated with many-body interactions. A large band-gap renormalization of 0.3 eV was directly observed in heavily doped
Ga
2
O
3
. Supplemented with hybrid density functional theory calculations, we demonstrated that the band-gap renormalization results from the decrease in energy of the conduction band edge driven by the mutual electrostatic interaction between added electrons. Moreover, our work reveals that Si is a superior dopant over Ge and Sn, because
Si
3
s
forms a resonant donor state above the conduction band minimum, leaving the host conduction band mostly unperturbed and a high mobility is maintained though the doping level is high. Insights of the present work have significant implications in doping optimization of
Ga
2
O
3
and realization of optoelectronic devices.
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Nov 2022
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I09-Surface and Interface Structural Analysis
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Diamond Proposal Number(s):
[21742]
Open Access
Abstract: Zn1–xSnxOy (ZTO) deposited by atomic layer deposition has shown promising results as a buffer layer material for kesterite Cu2ZnSnS4 (CZTS) thin film solar cells. Increased performance was observed when a ZTO buffer layer was used as compared to the traditional CdS buffer, and the performance was further increased after an air annealing treatment of the absorber. In this work, we study how CZTS absorber surface treatments may influence the chemical and electronic properties at the ZTO/CZTS interface and the reactions that may occur at the absorber surface prior to atomic layer deposition of the buffer layer. For this, we have used a combination of microscopy and synchrotron-based spectroscopies with variable information depths (X-ray photoelectron spectroscopy, high-energy X-ray photoelectron spectroscopy, and X-ray absorption spectroscopy), allowing for an in-depth analysis of the CZTS near-surface regions and bulk material properties. No significant ZTO buffer thickness variation is observed for the differently treated CZTS absorbers, and no differences are observed when comparing the bulk properties of the samples. However, the formation of SnOx and compositional changes observed toward the CZTS surface upon an air annealing treatment may be linked to the modified buffer layer growth. Further, the results indicate that the initial N2 annealing step integrated in the buffer layer growth by atomic layer deposition, which removes Na–COx species from the CZTS surface, may be useful for the ZTO/CZTS device performance.
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Oct 2022
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I09-Surface and Interface Structural Analysis
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Adam J.
Jackson
,
Benjamin J.
Parrett
,
Joe
Willis
,
Alex M.
Ganose
,
W. W. Winnie
Leung
,
Yuhan
Liu
,
Benjamin A. D.
Williamson
,
Timur K.
Kim
,
Moritz
Hoesch
,
Larissa S. I.
Veiga
,
Raman
Kalra
,
Jens
Neu
,
Charles A.
Schmuttenmaer
,
Tien-Lin
Lee
,
Anna
Regoutz
,
Tung-Chun
Lee
,
Tim D.
Veal
,
Robert G.
Palgrave
,
Robin
Perry
,
David O.
Scanlon
Diamond Proposal Number(s):
[24449]
Open Access
Abstract: Transparent conducting oxides have become ubiquitous in modern optoelectronics. However, the number of oxides that are transparent to visible light and have the metallic-like conductivity necessary for applications is limited to a handful of systems that have been known for the past 40 years. In this work, we use hybrid density functional theory and defect chemistry analysis to demonstrate that tri-rutile zinc antimonate, ZnSb2O6, is an ideal transparent conducting oxide and to identify gallium as the optimal dopant to yield high conductivity and transparency. To validate our computational predictions, we have synthesized both powder samples and single crystals of Ga-doped ZnSb2O6 which conclusively show behavior consistent with a degenerate transparent conducting oxide. This study demonstrates the possibility of a family of Sb(V)-containing oxides for transparent conducting oxide and power electronics applications.
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Oct 2022
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I09-Surface and Interface Structural Analysis
I11-High Resolution Powder Diffraction
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Diamond Proposal Number(s):
[29451]
Abstract: Topochemical reduction of the cation-disordered
perovskite oxides LaCo0.5Rh0.5O3 and LaNi0.5Rh0.5O3 with Zr yields
the partially anion-vacancy ordered phases LaCo0.5Rh0.5O2.25 and
LaNi0.5Rh0.5O2.25, respectively. Neutron diffraction and Hard X-ray
photoelectron spectroscopy (HAXPES) measurements reveal that
the anion-deficient phases contain Co1+/Ni1+ and a 1:1 mixture of
Rh1+ and Rh3+ cations within a disordered array of apex-linked
MO4 square-planar and MO5 square-based pyramidal coordination
sites. Neutron diffraction data indicate that LaCo0.5Rh0.5O2.25
adopts a complex antiferromagnetic ground state, which is the
sum of a C-type ordering (mM5
+) of the xy-components of the Co
spins and a G-type ordering (mΓ1
+) of the z-components of the Co
spins. On warming above 75 K, the magnitude of the mΓ1
+
component declines, attaining a zero value by 125 K, with the magnitude of the mM5
+ component remaining unchanged up to
175 K. This magnetic behavior is rationalized on the basis of the differing d-orbital fillings of the Co1+ cations in MO4 square-planar
and MO5 square-based pyramidal coordination sites. LaNi0.5Rh0.5O2.25 shows no sign of long-range magnetic order at 2 K − behavior
that can also be explained on the basis of the d-orbital occupation of the Ni1+ centers.
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Sep 2022
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