I09-Surface and Interface Structural Analysis
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Diamond Proposal Number(s):
[28680]
Open Access
Abstract: SrTiO3 (STO) is an incipient ferroelectric perovskite oxide for which the onset of ferroelectric order is suppressed by quantum fluctuations. This property results in a very large increase in static dielectric constant from ∼300 at room temperature to ∼20,000 at liquid He temperature in bulk single crystals. However, the low-temperature dielectric constant of epitaxial STO films is typically a few hundred to a few thousand. Here, we use all-epitaxial capacitors of the form n-STO/undoped STO/n-STO (001) prepared by hybrid molecular beam epitaxy, to demonstrate intrinsic dielectric constants of an unstrained STO (001) film exceeding 25,000. We show that the n-STO/undoped STO interface plays a critically important role not previously considered in determining the dielectric properties that must be properly accounted for to determine the intrinsic dielectric constant.
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Jun 2022
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I06-Nanoscience
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Dong
Li
,
Bonan
Zhu
,
Dirk
Backes
,
Larissa S. I.
Veiga
,
Tien-Lin
Lee
,
Hongguang
Wang
,
Qian
He
,
Pinku
Roy
,
Jiaye
Zhang
,
Jueli
Shi
,
Aiping
Chen
,
Peter A.
Van Aken
,
Quanxi
Jia
,
Sarnjeet S.
Dhesi
,
David O.
Scanlon
,
Kelvin H. L.
Zhang
,
Weiwei
Li
Diamond Proposal Number(s):
[25425, 26901, 29616]
Abstract: Strain engineering of epitaxial transition metal oxide heterostructures offers an intriguing opportunity to control electronic structures by modifying the interplay between spin, charge, orbital, and lattice degrees of freedom. Here, we demonstrate that the electronic structure, magnetic and transport properties of
La
0.9
Ba
0.1
MnO
3
thin films can be effectively controlled by epitaxial strain. Spectroscopic studies and first-principles calculations reveal that the orbital occupancy in Mn
e
g
orbitals can be switched from the
d
3
z
2
−
r
2
orbital to the
d
x
2
−
y
2
orbital by varying the strain from compressive to tensile. The change of orbital occupancy associated with Mn
3
d
-O
2
p
hybridization leads to dramatic modulation of the magnetic and electronic properties of strained
La
0.9
Ba
0.1
MnO
3
thin films. Under moderate tensile strain, an emergent ferromagnetic insulating state with an enhanced ferromagnetic Curie temperature of 215 K is achieved. These findings not only deepen our understanding of electronic structures, magnetic and transport properties in the
La
0.9
Ba
0.1
MnO
3
system, but also demonstrate the use of epitaxial strain as an effective knob to tune the electronic structures and related physical properties for potential spintronic device applications.
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Apr 2022
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I09-Surface and Interface Structural Analysis
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Matthew J.
Smiles
,
Thomas
Shalvey
,
Luke
Thomas
,
Theodore D. C.
Hobson
,
Leanne A. H.
Jones
,
Laurie
Phillips
,
Christopher
Don
,
Thomas
Beesley
,
Pardeep K.
Thakur
,
Tien-Lin
Lee
,
Ken
Durose
,
Jonathan D.
Major
,
Tim
Veal
Diamond Proposal Number(s):
[31170]
Open Access
Abstract: Germanium selenide (GeSe) bulk crystals, thin films and solar cells are investigated with a focus on acceptor-doping with silver (Ag) and the use of an Sb2Se3 interfacial layer. The Ag-doping of GeSe occurred by a stoichiometric melt growth technique that created Ag-doped GeSe bulk crystals. A combination of capacitance voltage measurements, synchrotron radiation photoemission spectroscopy and surface space-charge calculations indicate Ag-doping increases the hole density from 5.2×1015 cm-3 to 1.9×1016 cm-3. The melt-grown material is used as the source for thermally evaporated GeSe films within solar cells. The cell structure with the highest efficiency of 0.260% is FTO/CdS/Sb2Se3/undoped-GeSe/Au compared with solar cells without the Sb2Se3 interfacial layer or with the Ag-doped GeSe.
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Apr 2022
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I09-Surface and Interface Structural Analysis
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Diamond Proposal Number(s):
[24248]
Open Access
Abstract: Power semiconductor device architectures require the inclusion of a diffusion barrier to suppress or at best prevent the interdiffusion between the copper metallization interconnects and the surrounding silicon substructure. The binary pseudo-alloy of titanium–tungsten (TiW), with >70 at. % W, is a well-established copper diffusion barrier but is prone to degradation via the out-diffusion of titanium when exposed to high temperatures (≥400 ∘C). Here, the thermal stability of physical vapor deposited TiW/Cu bilayer thin films in Si/SiO2(50 nm)/TiW(300 nm)/Cu(25 nm) stacks were characterized in response to annealing at 400 ∘C for 0.5 h and 5 h, using a combination of soft and hard x-ray photoelectron spectroscopy and transmission electron microscopy. Results show that annealing promoted the segregation of titanium out of the TiW and interdiffusion into the copper metallization. Titanium was shown to be driven toward the free copper surface, accumulating there and forming a titanium oxide overlayer upon exposure to air. Annealing for longer timescales promoted a greater out-diffusion of titanium and a thicker oxide layer to grow on the copper surface. However, interface measurements suggest that the diffusion is not significant enough to compromise the barrier integrity, and the TiW/Cu interface remains stable even after 5 h of annealing.
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Apr 2022
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I09-Surface and Interface Structural Analysis
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Jiaye
Zhang
,
Joe
Willis
,
Zhenni
Yang
,
Xu
Lian
,
Wei
Chen
,
Lai-Sen
Wang
,
Xiangyu
Xu
,
Tien-Lin
Lee
,
Lang
Chen
,
David O.
Scanlon
,
Kelvin H. I.
Zhang
Diamond Proposal Number(s):
[24219]
Open Access
Abstract: Deep UV transparent thin films have recently attracted considerable attention owing to their potential in UV and organic-based optoelectronics. Here, we report the achievement of a deep UV transparent and highly conductive thin film based on Si-doped Ga2O3 (SGO) with high conductivity of 2500 S/cm. The SGO thin films exhibit high transparency over a wide spectrum ranging from visible light to deep UV wavelength and, meanwhile, have a very low work-function of approximately 3.2 eV. A combination of photoemission spectroscopy and theoretical studies reveals that the delocalized conduction band derived from Ga 4s orbitals is responsible for the Ga2O3 films’ high conductivity. Furthermore, Si is shown to act as an efficient shallow donor, yielding high mobility up to approximately 60 cm2/Vs. The superior optoelectronic properties of SGO films make it a promising material for use as electrodes in high-power electronics and deep UV and organic-based optoelectronic devices.
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Mar 2022
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I09-Surface and Interface Structural Analysis
|
Diamond Proposal Number(s):
[21995, 26285]
Abstract: Ni-rich lithium nickel manganese cobalt (NMC) oxide cathode materials promise Li-ion batteries with increased energy density and lower cost. However, higher Ni content is accompanied by accelerated degradation and thus poor cycle lifetime, with the underlying mechanisms and their relative contributions still poorly understood. Here, we combine electrochemical analysis with surface-sensitive X-ray photoelectron and absorption spectroscopies to observe the interfacial degradation occurring in LiNi0.8Mn0.1Co0.1O2–graphite full cells over hundreds of cycles between fixed cell voltages (2.5–4.2 V). Capacity losses during the first ∼200 cycles are primarily attributable to a loss of active lithium through electrolyte reduction on the graphite anode, seen as thickening of the solid-electrolyte interphase (SEI). As a result, the cathode reaches ever-higher potentials at the end of charge, and with further cycling, a regime is entered where losses in accessible NMC capacity begin to limit cycle life. This is accompanied by accelerated transition-metal reduction at the NMC surface, thickening of the cathode electrolyte interphase, decomposition of residual lithium carbonate, and increased cell impedance. Transition-metal dissolution is also detected through increased incorporation into and thickening of the SEI, with Mn found to be initially most prevalent, while the proportion of Ni increases with cycling. The observed evolution of anode and cathode surface layers improves our understanding of the interconnected nature of the degradation occurring at each electrode and the impact on capacity retention, informing efforts to achieve a longer cycle lifetime in Ni-rich NMCs.
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Feb 2022
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I09-Surface and Interface Structural Analysis
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Diamond Proposal Number(s):
[25807]
Abstract: The key charge transfer processes in energy storage devices occur at the electrode-electrolyte interface, which is typically buried making it challenging to access the interfacial chemistry. In the case of Li-ion batteries, metallic Li electrodes hold promise for increasing energy and power densities, and when used in conjunction with solid electrolytes adverse safety implications associated with dendrite formation in organic liquid electrolytes can potentially be overcome. To better understand the stability of solid electrolytes when in contact with alkali metals and the reactions that occur, here we consider the deposition of thin (~10 nm) alkali metal films onto solid electrolyte surfaces, that are thin enough that X-ray photoelectron spectroscopy can probe the buried electrode-electrolyte interface. We highlight the importance of in situ alkali metal deposition, by assessing the contaminant species that are present after glovebox handling and the use of ‘inert’ transfer devices. Consequently, we compare and contrast three available methods for in situ alkali-metal deposition; Li sputter deposition, Li evaporation, and Li plating induced by e− flood-gun irradiation. Studies on both a sulphide solid electrolyte (Li6PS5Cl), and a single-layer graphene probe surface reveal that the more energetic Li deposition methods such as sputtering can induce surface damage and interfacial mixing that is not seen with thermal evaporation. This indicates that appropriate selection of the Li deposition method for in situ studies is required to observe representative behaviour, and the results of previous studies involving energetic deposition may warrant further evaluation.
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Jan 2022
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I09-Surface and Interface Structural Analysis
|
Jueli
Shi
,
Ethan A.
Rubinstein
,
Weiwei
Li
,
Jiaye
Zhang
,
Ye
Yang
,
Tien-Lin
Lee
,
Changdong
Qin
,
Pengfei
Yan
,
Judith L.
Macmanus-Driscoll
,
David O.
Scanlon
,
Kelvin H.l.
Zhang
Diamond Proposal Number(s):
[24219]
Open Access
Abstract: Oxide semiconductors are key materials in many technologies from flat-panel displays，solar cells to transparent electronics. However, many potential applications are hindered by the lack of high mobility p-type oxide semiconductors due to the localized O-2p derived valence band (VB) structure. In this work, the VB structure modulation is reported for perovskite Ba2BiMO6 (M = Bi, Nb, Ta) via the Bi 6s2 lone pair state to achieve p-type oxide semiconductors with high hole mobility up to 21 cm2 V−1 s−1, and optical bandgaps widely varying from 1.5 to 3.2 eV. Pulsed laser deposition is used to grow high quality epitaxial thin films. Synergistic combination of hard x-ray photoemission, x-ray absorption spectroscopies, and density functional theory calculations are used to gain insight into the electronic structure of Ba2BiMO6. The high mobility is attributed to the highly dispersive VB edges contributed from the strong coupling of Bi 6s with O 2p at the top of VB that lead to low hole effective masses (0.4–0.7 me). Large variation in bandgaps results from the change in the energy positions of unoccupied Bi 6s orbital or Nb/Ta d orbitals that form the bottom of conduction band. P–N junction diode constructed with p-type Ba2BiTaO6 and n-type Nb doped SrTiO3 exhibits high rectifying ratio of 1.3 × 104 at ±3 V, showing great potential in fabricating high-quality devices. This work provides deep insight into the electronic structure of Bi3+ based perovskites and guides the development of new p-type oxide semiconductors.
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Jan 2022
|
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I09-Surface and Interface Structural Analysis
|
Diamond Proposal Number(s):
[25582]
Abstract: The electronic structures of semiconducting heterojunctions are critically dependent on composition including the presence and concentrations of dopants, both intended and unintended. Dopant profiles in the interfacial region can have major effects on band energies which in turn drive transport properties. Here we use core-level photoelectron line shapes excited with hard x rays to extract information about electric fields resulting from internal charge transfer in epitaxial
La
0.03
Sr
0.97
Zr
x
Ti
1
–
x
O
3
/
Ge
(
001
)
(
0.1
≤
x
≤
0.7
)
heterostructures. Experiments were carried out for heterojunctions involving both
n
- and
p
-type Ge substrates. These heterojunctions were not amenable to electronic characterization of all regions by transport measurements because the doped substrates act as electrical shunts, precluding probing the more resistive films and masking interface conductivity. However, the core-level line shapes were found to be a rich source of information on built-in potentials that exist throughout the heterostructure, and yielded valuable insight into the impact of band bending on band alignment at the buried interfaces. The electronic effects expected for Ge with uniform
n
- and
p
-type doping are eclipsed by those of unintended oxygen dopants in the Ge near the interface. This study illustrates the power of hard x-ray photoemission spectroscopy and related modeling to determine electronic structure in material systems for which insight from traditional transport measurements is limited.
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Jan 2022
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I09-Surface and Interface Structural Analysis
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C.
Kalha
,
L. E.
Ratcliff
,
J. J. Gutiérrez
Moreno
,
S.
Mohr
,
M.
Mantsinen
,
N. K.
Fernando
,
P. K.
Thakur
,
T.-L.
Lee
,
H.-H.
Tseng
,
T. S.
Nunney
,
J. M.
Kahk
,
J.
Lischner
,
A.
Regoutz
Diamond Proposal Number(s):
[27164]
Abstract: Tungsten (W) is an important and versatile transition metal and has a firm place at the heart of many technologies. A popular experimental technique for the characterization of tungsten and tungsten-based compounds is x-ray photoelectron spectroscopy (XPS), which enables the assessment of chemical states and electronic structure through the collection of core level and valence band spectra. However, in the case of tungsten metal, open questions remain regarding the origin, nature, and position of satellite features that are prominent in the photoelectron spectrum. These satellites are a fingerprint of the electronic structure of the material and have not been thoroughly investigated, at times leading to their misinterpretation. The present work combines high-resolution soft and hard x-ray photoelectron spectroscopy (SXPS and HAXPES) with reflected electron energy loss spectroscopy (REELS) and a multitiered ab initio theoretical approach, including density functional theory (DFT) and many-body perturbation theory (G0W0 and
GW
+
C
), to disentangle the complex set of experimentally observed satellite features attributed to the generation of plasmons and interband transitions. This combined experiment-theory strategy is able to uncover previously undocumented satellite features, improving our understanding of their direct relationship to tungsten's electronic structure. Furthermore, it lays the groundwork for future studies into tungsten-based mixed-metal systems and holds promise for the reassessment of the photoelectron spectra of other transition and post-transition metals, where similar questions regarding satellite features remain.
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Jan 2022
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