Show Abstract ▼

Abstract: In the field of van der Waals heterostructures, the twist angle between stacked two-dimensional layers has been identified to be of utmost importance for the properties of the heterostructures. In this context, we previously reported the growth of a single layer of unconventionally oriented epitaxial graphene that forms in a surfactant atmosphere [F. C. Bocquet et al., Phys. Rev. Lett. 125, 106102 (2020)]. The resulting G- R 0 ∘ layer is aligned with the SiC lattice, and hence represents an important milestone towards high-quality twisted bilayer graphene, a frequently investigated model system in this field. Here, we focus on the surface structures obtained in the same surfactant atmosphere, but at lower preparation temperatures at which a boron nitride template layer forms on SiC(0001). In a comprehensive study based on complementary experimental and theoretical techniques, we find—in contrast to the literature—that this template layer is a hexagonal B x N y layer, but not high-quality hBN. It is aligned with the SiC lattice and gradually replaced by low-quality graphene in the 0 ∘ orientation of the B x N y template layer upon annealing.

Open Access

Show Abstract ▼

Abstract: This paper is motivated by the potential advantages of higher doping and lower contact barriers in CdTe photovoltaic devices that may be realized by using n- type rather than the conventional p-type solar absorber layers. We present post-growth doping trials for indium in thin polycrystalline CdTe films using diffusion of indium metal and with indium chloride. Chemical concentrations of indium up to 1019 cm-3 were achieved and the films were verified as n-type by hard x-ray photoemission. Post growth chlorine treatment (or InCl3) was found to compensate the n-doping. Trial structures comprising CdS/CdTe:In verified that the doped absorber structures performed as expected both before and after chloride treatment, but it is recognized that this is not an optimum combination. Hence in order to identify how the advantages of n-type absorbers might be fully realized in future work, we also report simulations of a range of p-n junction combinations with n-CdTe, a number of which have the potential for high Voc.

Open Access

Show Abstract ▼

Abstract: A combined high resolution X-ray photoelectron spectroscopy and X-ray standing wave study into the adsorption structure of hydrogenated graphene on Ir(111) is presented. By exploiting the unique absorption profiles and significant modulations in signal intensity found within the X-ray standing wave results, we refine the fitting of the C 1s X-ray photoelectron spectra, allowing us to disentangle the contributions from hydrogenation of graphene in different high-symmetry regions of the moiré supercell. We clearly demonstrate that hydrogenation in the FCC regions results in the formation of a graphane-like structure, giving a standalone component that is separated from the component assigned to the similar structure in the HCP regions. The contribution from dimer structures in the ATOP regions is found to be minor or negligible. This is in contrast to the previous findings where a dimer structure was assumed to contribute significantly to the sp3 part of the C 1s spectra. The corrugation of the remaining pristine parts of the H-graphene is shown to increase with the H coverage, reflecting an increasing number and size of pinning centers of the graphene to the Ir(111) substrate with increasing H exposure.

Open Access

Show Abstract ▼

Abstract: Photoelectron spectroscopy is a powerful characterisation tool for semiconductor surfaces and interfaces, providing in principle a correlation between the electronic band structure and surface chemistry along with quantitative parameters such as the electron affinity, interface potential, band bending and band offsets. However, measurements are often limited to ultrahigh vacuum and only the top few atomic layers are probed. The technique is seldom applied as an in situ probe of surface processing; information is usually provided before and after processing in a separate environment, leading to a reduction in reproducibility. Advances in instrumentation, in particular electron detection has enabled these limitations to be addressed, for example allowing measurement at near-ambient pressures and the in situ, real-time monitoring of surface processing and interface formation. A further limitation is the influence of the measurement method through irreversible chemical effects such as radiation damage during X-ray exposure and reversible physical effects such as the charging of low conductivity materials. For wide-gap semiconductors such as oxides and carbon-based materials, these effects can be compounded and severe. Here we show how real-time and near-ambient pressure photoelectron spectroscopy can be applied to identify and quantify these effects, using a gold alloy, gallium oxide and semiconducting diamond as examples. A small binding energy change due to thermal expansion is followed in real-time for the alloy while the two semiconductors show larger temperature-induced changes in binding energy that, although superficially similar, are identified as having different and multiple origins, related to surface oxygen bonding, surface band-bending and a room-temperature surface photovoltage. The latter affects the p-type diamond at temperatures up to 400 °C when exposed to X-ray, UV and synchrotron radiation and under UHV and 1 mbar of O2. Real-time monitoring and near-ambient pressure measurement with different excitation sources has been used to identify the mechanisms behind the observed changes in spectral parameters that are different for each of the three materials. Corrected binding energy values aid the completion of the energy band diagrams for these wide-gap semiconductors and provide protocols for surface processing to engineer key surface and interface parameters.

Open Access

Show Abstract ▼

Abstract: Palladium and palladium–platinum foils were analysed using temperature-programmed near-ambient pressure X-ray photoelectron spectroscopy (TP-NAP-XPS) under methane oxidation conditions. Oxidation of palladium is inhibited by the presence of water, and in oxygen-poor environments. Pt addition further inhibits oxidation of palladium across all reaction conditions, preserving metallic palladium to higher temperatures. Bimetallic foils underwent significant restructuring under reaction conditions, with platinum preferentially migrating to the bulk under select conditions.