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Resolving antiferromagnetic states in magnetically coupled amorphous Co-Si-Si multilayersby soft x-ray resonant magnetic scattering
DOI:
10.1103/PhysRevB.78.064406
Authors:
S. M.
Valvidares
(European Synchrotron Radiation Facility)
,
C.
Quirós
(Universidad de OviedoCINN)
,
A.
Mirone
(ESRF)
,
J.-m.
Tonnerre
(Institut Néel, CNRS)
,
S.
Stanescu
(European Synchrotron Radiation Facility)
,
Y.
Souche
(Institut Néel, CNRS)
,
L.
Zárate
(Universidad de OviedoCINN)
,
J. I.
Martín
(Universidad de OviedoCINN)
,
M.
Vélez
(Universidad de OviedoCINN)
,
N. B.
Brookes
(European Synchrotron Radiation Facility)
,
J. M.
Alameda
(Universidad de OviedoCINN)
,
P.
Bencok
(European Synchrotron Radiation Facility)
Co-authored by industrial partner:
No
Type:
Journal Paper
Journal:
Physical Review B
, VOL 78 (6)
, PAGES 064406
State:
Published (Approved)
Published:
August 2008
Abstract: Soft x-ray resonant magnetic scattering SXRMS has been used to probe the interlayer coupling in amorphous ferromagnetic/semiconductor multilayers. It is shown that the Co73Si27 50 Å / Si 30 Å system exhibits an antiferromagnetic AF coupling at low fields. Moreover, another aspect of SXRMS effect is reported. Using circularly polarized photons, a shift in the AF order Bragg peaks’ position is observed and related to two opposite AF states with the spin direction longitudinally aligned. As a consequence, the sensitivity of SXRMS to AF domains having the same spin axis but opposite senses is shown. A physical explanation for the origin of this effect is provided in terms of magnetic-resonant-refraction corrections to Bragg’s angle, taking into account the phase shifts between layers with opposite magnetization directions at different in-depth positions. Numerical simulations are performed that reproduced the experimental observations.
Subject Areas:
Physics
Instruments:
NONE-No attached Diamond beamline
Added On:
19/08/2009 23:07
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