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Resolving antiferromagnetic states in magnetically coupled amorphous Co-Si-Si multilayersby soft x-ray resonant magnetic scattering

DOI: 10.1103/PhysRevB.78.064406 DOI Help

Authors: S. M. Valvidares (European Synchrotron Radiation Facility) , C. Quirós (Universidad de Oviedo–CINN) , A. Mirone (ESRF) , J.-m. Tonnerre (Institut Néel, CNRS) , S. Stanescu (European Synchrotron Radiation Facility) , Y. Souche (Institut Néel, CNRS) , L. Zárate (Universidad de Oviedo–CINN) , J. I. Martín (Universidad de Oviedo–CINN) , M. Vélez (Universidad de Oviedo–CINN) , N. B. Brookes (European Synchrotron Radiation Facility) , J. M. Alameda (Universidad de Oviedo–CINN) , P. Bencok (European Synchrotron Radiation Facility)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Physical Review B , VOL 78 (6) , PAGES 064406

State: Published (Approved)
Published: August 2008

Abstract: Soft x-ray resonant magnetic scattering SXRMS has been used to probe the interlayer coupling in amorphous ferromagnetic/semiconductor multilayers. It is shown that the Co73Si27 50 Å / Si 30 Å system exhibits an antiferromagnetic AF coupling at low fields. Moreover, another aspect of SXRMS effect is reported. Using circularly polarized photons, a shift in the AF order Bragg peaks’ position is observed and related to two opposite AF states with the spin direction longitudinally aligned. As a consequence, the sensitivity of SXRMS to AF domains having the same spin axis but opposite senses is shown. A physical explanation for the origin of this effect is provided in terms of magnetic-resonant-refraction corrections to Bragg’s angle, taking into account the phase shifts between layers with opposite magnetization directions at different in-depth positions. Numerical simulations are performed that reproduced the experimental observations.

Subject Areas: Physics

Instruments: NONE-No attached Diamond beamline

Added On: 19/08/2009 23:07

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