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Saturation of intersubband transitions in p-doped GaAs/AlGaAs quantum wells

DOI: 10.1063/1.2920706 DOI Help

Authors: R. Steed (Imperial College London) , M. Matthews (Imperial College London) , J. Plumridge (Imperial College London) , M. Frogley (Imperial College London) , C. C. Phillips (Imperial College London) , P. Harrison (University of Leeds) , O. Malis (State University of New York) , L. N. Pfeiffer (Bell Labs) , Z. Ikonic (University of Leeds) , K. W. West (Bell Labs)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Applied Physics Letters , VOL 92 (18) , PAGES 183104

State: Published (Approved)
Published: May 2008

Abstract: Optical saturation experiments have been performed on hh1-hh2 intersubband transitions in two samples of p -doped GaAs?AlGaAs quantum wells. The transitions had energies of 183 and 160meV and the measured population relaxation times were 2±1.5 and 0.3±0.1ps , respectively. Modeling of the quantum wells with a 6×6 k?p method shows that intersubband scattering by LO phonons can account for these relaxation times. The valence bandstructure is typically more complicated than the conduction bandstructure in a quantum well but these measurements show that LO phonons are the dominant intersubband scattering mechanism in both cases

Journal Keywords: Quantum Wells; Phonons; Relaxation Times

Subject Areas: Physics, Materials

Instruments: NONE-No attached Diamond beamline