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Valence band orbital polarization in III-V ferromagnetic semiconductors
DOI:
10.1103/PhysRevB.77.073304
Authors:
R. P.
Campion
(University of Nottingham)
,
A. W.
Rushforth
(University of Nottingham)
,
N. R. S.
Farley
(University of Nottingham)
,
T. K.
Johal
(STFC Daresbury Laboratory)
,
C. T.
Foxon
(University of Nottingham)
,
B. L.
Gallagher
(University of Nottingham)
,
A.
Rogalev
(European Synchrotron Radiation Facility)
,
F.
Wilhelm
(European Synchrotron Radiation Facility)
,
A. A.
Freeman
(University of Nottingham)
,
G.
Van Der Laan
(STFC Daresbury Laboratory; Diamond Light Source)
,
K. W.
Edmonds
(University of Nottingham)
Co-authored by industrial partner:
No
Type:
Journal Paper
Journal:
Physical Review B
, VOL 77 (7)
, PAGES 073304-1/4
State:
Published (Approved)
Published:
February 2008
Abstract: The element-specific technique of x-ray magnetic circular dichroism (XMCD) is used to directly determine the magnitude and character of the valence band orbital magnetic moments in (III,Mn)As ferromagnetic semiconductors. A distinct dichroism is observed at the As K absorption edge, yielding an As 4 p orbital magnetic moment of around − 0.1 μ B per valence band hole, which is strongly influenced by strain, indicating its crucial influence on the magnetic anisotropy. The dichroism at the Ga K edge is much weaker. The K edge XMCD signals for Mn and As both have positive sign, which indicates the important contribution of Mn 4 p states to the Mn K edge spectra.
Diamond Keywords: Ferromagnetism; Semiconductors; Spintronics
Subject Areas:
Physics,
Materials
Facility: ID12 at ESRF
Added On:
19/08/2009 23:07
Discipline Tags:
Quantum Materials
Physics
Electronics
Magnetism
Materials Science
Technical Tags: