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Valence band orbital polarization in III-V ferromagnetic semiconductors
DOI:
10.1103/PhysRevB.77.073304
Authors:
R. P.
Campion
(University of Nottingham)
,
A. W.
Rushforth
(University of Nottingham)
,
N. R. S.
Farley
(University of Nottingham)
,
T. K.
Johal
(Daresbury Laboratory)
,
C. T.
Foxon
(University of Nottingham)
,
B. L.
Gallagher
(University of Nottingham)
,
A.
Rogalev
(European Synchrotron Radiation Facility)
,
F.
Wilhelm
(European Synchrotron Radiation Facility)
,
A. A.
Freeman
(School of Physics and Astronomy, University of Nottingham)
,
G.
Van Der Laan
(Diamond Light Source)
,
K. W.
Edmonds
(University of Nottingham)
Co-authored by industrial partner:
No
Type:
Journal Paper
Journal:
Physical Review B
, VOL 77 (7)
, PAGES 073304-1/4
State:
Published (Approved)
Published:
February 2008
Abstract: The element-specific technique of x-ray magnetic circular dichroism (XMCD) is used to directly determine the magnitude and character of the valence band orbital magnetic moments in (III,Mn)As ferromagnetic semiconductors. A distinct dichroism is observed at the AsK absorption edge, yielding an As4p orbital magnetic moment of around −0.1μB per valence band hole, which is strongly influenced by strain, indicating its crucial influence on the magnetic anisotropy. The dichroism at the GaK edge is much weaker. The K edge XMCD signals for Mn and As both have positive sign, which indicates the important contribution of Mn4p states to the MnK edge spectra.
Subject Areas:
Physics
Facility: ESRF