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Zinc Oxide Nanostructures and High Electron Mobility Nanocomposite Thin Film Transistors

DOI: 10.1109/TED.2008.2005180 DOI Help

Authors: F. M .li (University of Cambridge) , G. W. Hsieh (University of Cambridge) , S. Dalal (University of Cambridge) , M. C. Newton (University of Cambridge) , J. E. Stott (University of Cambridge) , P. Hirala (University of Cambridge) , A. Nathan (University of Cambridge) , P. A. Warburton (University of Cambridge) , H.e. Unalan (University of Cambridge) , P. Beecher (University of Cambridge) , A. J. Flewitt (University of Cambridge) , G. Amaratunga (University of Cambridge) , W. I. Milne (University of Cambridge) , Ian Robinson (Diamond Light Source)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Ieee Transactions On Electron Devices , VOL 55 , PAGES 3001-3011

State: Published (Approved)
Published: November 2008

Abstract: This paper reports on the synthesis of zinc oxide (ZnO) nanostructures and examines the performance of nanocomposite thin-film transistors (TFTs) fabricated using ZnO dispersed in both n- and p-type polymer host matrices. The ZnO nanostructures considered here comprise nanowires and tetrapods and were synthesized using vapor phase deposition techniques involving the carbothermal reduction of solid-phase zinc-containing compounds. Measurement results of nanocomposite TFTs based on dispersion of ZnO nanorods in an n-type organic semiconductor ([6, 6]-phenyl-C-61-butyric acid methyl ester) show electron field-effect mobilities in the range 0.3-0.6 cm(2)V(-1)s(-1), representing an approximate enhancement by as much as a factor of 40 from the pristine state. The on/off current ratio of the nanocomposite TFTs approach 10(6) at saturation with off-currents on the order of 10 pA. The results presented here, although preliminary, show a highly promising enhancement for realization of high-performance solution-processable n-type organic TFTs.

Subject Areas: Physics

Instruments: NONE-No attached Diamond beamline