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Enhanced electrical properties of antimony doped tin oxide thin films deposited via aerosol assisted chemical vapour deposition

DOI: 10.1039/C8TC01929K DOI Help

Authors: Sapna D. Ponja (University College London) , Benjamin A. D. Williamson (University College London;) , Sanjay Sathasivam (University College London) , David O. Scanlon (University College London; Diamond Light Source) , Ivan P. Parkin (University College London) , Claire J. Carmalt (University College London)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Journal Of Materials Chemistry C , VOL 6 , PAGES 7257 - 7266

State: Published (Approved)
Published: June 2018

Open Access Open Access

Abstract: Transparent conducting oxides have widespread application in modern society but there is a need to move away from the current ‘industry champion’ tin doped indium oxide (In2O3:Sn) due to high costs. Antimony doped tin(IV) oxide (ATO) is an excellent candidate but is limited by its opto-electrical properties. Here, we present a novel and scalable synthetic route to ATO thin films that shows excellent electrical properties. Resistivity measurements showed that at 4 at% doping the lowest value of 4.7 × 10−4 Ω cm was achieved primarily due to a high charge carrier density of 1.2 × 1021 cm−3. Further doping induced an increase in resistivity due to a decrease in both the carrier density and mobility. Ab initio hybrid density functional theory (DFT) calculations show the thermodynamic basis for the tail off of performance beyond a certain doping level, and the appearance of Sb(III) within the doped thin films.

Subject Areas: Chemistry


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c8tc01929k.pdf