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Toward the optimized spintronic response of Sn-doped IrO2 thin films
Authors:
Eduardo
Arias-Egido
(Instituto de Ciencia de Materiales de Aragón CSIC – Universidad de Zaragoza)
,
María Angeles
Laguna-Marco
(Instituto de Ciencia de Materiales de Aragón, CSIC – Universidad de Zaragoza)
,
Cristina
Piquer
(Instituto de Ciencia de Materiales de Aragón CSIC – Universidad de Zaragoza)
,
Roberto
Boada
(Diamond Light Source; Universitat Autònoma de Barcelona)
,
Sofia
Diaz-Moreno
(Diamond Light Source)
Co-authored by industrial partner:
No
Type:
Journal Paper
Journal:
Advanced Functional Materials
, VOL 7
State:
Published (Approved)
Published:
January 2019
Diamond Proposal Number(s):
15016
Abstract: Amorphous and polycrystalline Sn‐doped IrO2 thin films, Ir1‐xSnxO2, are grown for the first time. Their electrical response and strength of the spin–orbit coupling are studied in order to better understand and tailor its performance as spin current detector material. These experiments prove that the resistivity of IrO2 can be tuned over several orders of magnitude by controlling the doping content in both the amorphous and the polycrystalline state. In addition, growing amorphous samples increase the resistivity, thus improving the spin current to charge current conversion. As far as the spin–orbit coupling is concerned, the system not only remains in a strong spin–orbit coupling regime but it seems to undergo a slight enhancement in the amorphous state as well as in the Sn‐doped samples.
Journal Keywords: electrical properties; iridates; spin–orbit coupling interactions; spintronics; thin films
Diamond Keywords: Spintronics
Subject Areas:
Materials,
Physics
Instruments:
I20-Scanning-X-ray spectroscopy (XAS/XES)
Added On:
29/01/2019 09:29
Discipline Tags:
Surfaces
Hard condensed matter - electronic properties
Physics
Electronics
Materials Science
interfaces and thin films
Technical Tags:
Spectroscopy
X-ray Absorption Spectroscopy (XAS)
High Energy Resolution Fluorescence Detected XAS (HERFD-XAS)