Spin-ARPES EUV beamline for ultrafast materials research and development

DOI: 10.3390/app9030370

Authors: Zhonghui Nie (Nanjing University) , Ion Cristian Edmond Turcu (Nanjing University; Central Laser Facility, STFC Rutherford Appleton Laboratory) , Yao Li (Nanjing University) , Xiaoqian Zhang (Nanjing University) , Liang He (Nanjing University) , Jian Tu (Nanjing University) , Zhiqiang Ni (Nanjing University) , Huangfeng Xu (Nanjing University) , Yequan Chen (Nanjing University) , Xuezhong Ruan (Nanjing University) , Fabio Frassetto (National Research Council Institute of Photonics and Nanotechnologies) , Paolo Miotti (National Research Council Institute of Photonics and Nanotechnologies) , Nicola Fabris (National Research Council Institute of Photonics and Nanotechnologies) , Luca Poletto (National Research Council Institute of Photonics and Nanotechnologies) , Jing Wu (The University of York) , Qiangsheng Lu (Southern University of Science and Technology) , Chang Liu (Southern University of Science and Technology of China) , Thorsten Kampen (Technische Universität Berlin) , Ya Zhai (Southeast University) , Wenqing Liu (Royal Holloway, University of London) , Cephise Cacho (Diamond Light Source) , Xuefeng Wang (Nanjing University) , Fengqiu Wang (Nanjing University) , Yi Shi (Nanjing University) , Rong Zhang (Nanjing University) , Yongbing Xu (Nanjing University; The University of York)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Applied Sciences , VOL 9

State: Published (Approved)
Published: January 2019

Abstract: A new femtosecond, Extreme Ultraviolet (EUV), Time Resolved Spin-Angle Resolved Photo-Emission Spectroscopy (TR-Spin-ARPES) beamline was developed for ultrafast materials research and development. This 50-fs laser-driven, table-top beamline is an integral part of the “Ultrafast Spintronic Materials Facility”, dedicated to engineering ultrafast materials. This facility provides a fast and in-situ analysis and development of new materials. The EUV source based on high harmonic generation process emits 2.3 × 1011 photons/second (2.3 × 108 photons/pulse) at H23 (35.7 eV) and its photon energy ranges from 10 eV to 75 eV, which enables surface sensitive studies of the electronic structure dynamics. The EUV monochromator provides the narrow bandwidth of the EUV beamline while preserving its pulse duration in an energy range of 10–100 eV. Ultrafast surface photovoltaic effect with ~650 fs rise-time was observed in p-GaAs (100) from time-resolved ARPES spectra. The data acquisition time could be reduced by over two orders of magnitude by scaling the laser driver from 1 KHz, 4W to MHz, KW average power.

Journal Keywords: gh-order harmonic generation; ultrafast extreme violet; time-resolved ARPES

Subject Areas: Technique Development


Technical Areas:

Added On: 29/01/2019 10:16

Documents:
applsci-09-00370-v2.pdf

Discipline Tags:

Technique Development - Materials Science Materials Science

Technical Tags: