Publication

Article Metrics

Citations


Online attention

Electronic structure and 4 f -electron character in Ce 2 PdIn 8 studied by angle-resolved photoemission spectroscopy

DOI: 10.1103/PhysRevB.99.081107 DOI Help

Authors: Q. Yao (Fudan University; Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences) , D. Kaczorowski (Centre for Advanced Materials and Smart Structures; Institute of Low Temperature and Structure Research, Polish Academy of Sciences;) , P. Swatek (Institute of Low Temperature and Structure Research, Polish Academy of Sciences; Ames Laboratory; Iowa State University) , D. Gnida (Institute of Low Temperature and Structure Research, Polish Academy of Sciences) , C. H. P. Wen (Fudan University) , X. H. Niu (Fudan University) , R. Peng (Fudan University) , H. C. Xu (Fudan University) , P. Dudin (Diamond Light Source) , S. Kirchner (Zhejiang Institute of Modern Physics, Zhejiang University) , Q. Y. Chen (Science and Technology on Surface Physics and Chemistry Laboratory, China) , D. W. Shen (Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences; CAS Center for Excellence in Superconducting Electronics (CENSE)) , D. L. Feng (Fudan University; Collaborative Innovation Center of Advanced Microstructures, China)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Physical Review B , VOL 99

State: Published (Approved)
Published: February 2019
Diamond Proposal Number(s): 16345

Abstract: The localized-to-itinerant transition of f electrons lies at the heart of heavy-fermion physics, but has only been directly observed in single-layer Ce-based materials. Here, we report a comprehensive study on the electronic structure and nature of the Ce 4f electrons in the heavy-fermion superconductor Ce2PdIn8, a typical n=2 CenMmIn3n+2m compound, using high-resolution and 4d−4f resonant photoemission spectroscopies. The electronic structure of this material has been studied over a wide temperature range, and hybridization between f and conduction electrons can be clearly observed to form a Kondo resonance near the Fermi level at low temperatures. The characteristic temperature of the localized-to-itinerant transition is around 120 K, which is much higher than its coherence temperature Tcoh∼30K.

Journal Keywords: Electronic structure; Heavy-fermion systems; Angle-resolved photoemission spectroscopy

Subject Areas: Materials, Physics


Instruments: I05-ARPES