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Tuning the ambipolar behaviour of organic field effect transistors via band engineering

DOI: 10.1063/1.5080505 DOI Help

Authors: P. R. Warren (University of Oxford) , J. F. M. Hardigree (University of Oxford) , A. E. Lauritzen (University of Oxford) , J. Nelson (Imperial College London) , M. Riede (University of Oxford)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Aip Advances , VOL 9

State: Published (Approved)
Published: March 2019
Diamond Proposal Number(s): 18016 , 20426

Open Access Open Access

Abstract: We report on a method for fabricating balanced hole and electron transport in ambipolar organic field-effect transistors (OFETs) based on the co-evaporation of zinc-phthalocyanine (ZnPc) and its fluorinated derivative (F8ZnPc). The semiconducting behaviour of the OFET can be tuned continuously from unipolar p-type, with a hole mobility in the range of (1.7 ± 0.1) × 10−4 cm2/Vs, to unipolar n-type, with an electron mobility of (1.0 ± 0.1) × 10−4 cm2/Vs. Devices of the pristine ZnPc and F8ZnPc show a current on/off ratio of 105. By co-evaporating the p-type ZnPc with the n-type F8ZnPc, we fabricate ambipolar transistors and complementary-like voltage inverters. For the ambipolar devices, the optimum balance between the hole and electron mobilities is found for the blend of 1:1.5 weight ratio with hole and electron mobilities of (8.3 ± 0.2) × 10−7 cm2/Vs and (5.5 ± 0.1) × 10−7 cm2/Vs, respectively. Finally we demonstrate application of the ambipolar devices in a complementary-like voltage inverter circuit with the performance comparable to an inverter based on separate ZnPc and F8ZnPc OFETs.

Journal Keywords: Thin films; Organic semiconductors; Electronic transport; Electronic circuits; Electrical properties and parameters; Field effect transistors

Subject Areas: Physics


Instruments: I07-Surface & interface diffraction

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