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Sub-lattice polarization states in anti-ferroelectrics and their relaxation process
DOI:
10.1016/j.cap.2019.03.009
Data DOI:
10.1016/j.cap.2019.03.009
Authors:
M. M.
Vopson
(University of Portsmouth)
,
X.
Tan
(Iowa State University)
,
E.
Namvar
(University of Portsmouth)
,
M.
Belusky
(University of Portsmouth)
,
S. P.
Thompson
(Diamond Light Source)
,
V.
Kuncser
(National Institute for Materials Physics, Bucharest-Magurele)
,
F.
Plazaola
(UPV/EHU)
,
I.
Unzueta
(UPV/EHU)
,
C. C.
Tang
(Diamond Light Source)
Co-authored by industrial partner:
No
Type:
Journal Paper
Journal:
Current Applied Physics
, VOL 19
, PAGES 651-656
State:
Published (Approved)
Published:
March 2019
Diamond Proposal Number(s):
18495
Abstract: We report studies of quasi-remanent polarization states in Pb0.99Nb0.02[(Zr0.57Sn0.43)0.94Ti0.06]0.98O3 (PNZST) anti-ferroelectric ceramics and investigation of their relaxation effects using unique in-situ electrically activated time-resolved Synchrotron X-ray powder diffraction (SXPD) and 119Sn Mössbauer Spectroscopy (MS). The SXPD patterns are consistent with a phase transition from quasi-tetragonal perovskite in 0V relaxed anti-ferroelectric state to rhombohedral distortion in ferroelectric state under saturating applied voltages of 2kV. The observed quasi-remanent polarization relaxation processes are due to the fact that tetragonal to rhombohedral distortion does not occur at the applied voltage required to access the quasi-remanent polarization states, and the tetragonal symmetry restored after the removal of the applied electric field is preserved. Since these quasi-remanent polarization states were seen as possibly suitable for memory applications, the implications of this study are that anti-ferroelectrics are more feasible for multi-state dynamic random access memories (DRAM), while their application to non-volatile memories requires development of more sophisticated “read-out” protocols, possibly involving dc electrical biasing.
Journal Keywords: Polarization relaxation; anti-polar materials; solid state memories; time resolved synchrotron measurements; Mossbauer spectroscopy
Diamond Keywords: Data Storage; Antiferroelectricity; Ferroelectricity
Subject Areas:
Physics,
Materials,
Information and Communication Technology
Instruments:
I11-High Resolution Powder Diffraction
Added On:
19/03/2019 10:28
Discipline Tags:
Quantum Materials
Hard condensed matter - electronic properties
Physics
Electronics
Components & Micro-systems
Information & Communication Technologies
Materials Science
Technical Tags:
Diffraction
X-ray Powder Diffraction