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Flexible and ultrasoft inorganic 1D semiconductor and heterostructure systems based on SnIP

DOI: 10.1002/adfm.201900233 DOI Help

Authors: Claudia Ott (Technical University of Munich) , Felix Reiter (Technical University of Munich) , Maximilian Baumgartner (Technical University of Munich) , Markus Pielmeier (Technical University of Munich) , Anna Vogel (Technical University of Munich) , Patrick Walke (Technical University of Munich) , Stefan Burger (Technical University of Munich) , Michael Ehrenreich (Technical University of Munich) , Gregor Kieslich (Technical University of Munich) , Dominik Daisenberger (Diamond Light Source) , Jeff Armstrong (ISIS Facility) , Ujwal Kumar Thakur (University of Alberta) , Pawan Kumar (University of Alberta) , Shunda Chen (University of California) , Davide Donadio (University of California) , Lisa S. Walter (Ludwig‐Maximilians‐University Munich) , R. Thomas Weitz (Ludwig‐Maximilians‐University Munich; Center for NanoScience (CeNS) and Nanosystems Initiative Munich (NIM)) , Karthik Shankar (University of Alberta) , Tom Nilges (Technical University of Munich)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Advanced Functional Materials , VOL 271

State: Published (Approved)
Published: March 2019
Diamond Proposal Number(s): 17332 , 19187

Abstract: Low dimensionality and high flexibility are key demands for flexible electronic semiconductor devices. SnIP, the first atomic‐scale double helical semiconductor combines structural anisotropy and robustness with exceptional electronic properties. The benefit of the double helix, combined with a diverse structure on the nanoscale, ranging from strong covalent bonding to weak van der Waals interactions, and the large structure and property anisotropy offer substantial potential for applications in energy conversion and water splitting. It represents the next logical step in downscaling the inorganic semiconductors from classical 3D systems, via 2D semiconductors like MXenes or transition metal dichalcogenides, to the first downsizeable, polymer‐like atomic‐scale 1D semiconductor SnIP. SnIP shows intriguing mechanical properties featuring a bulk modulus three times lower than any IV, III‐V, or II‐VI semiconductor. In situ bending tests substantiate that pure SnIP fibers can be bent without an effect on their bonding properties. Organic and inorganic hybrids are prepared illustrating that SnIP is a candidate to fabricate flexible 1D composites for energy conversion and water splitting applications. SnIP@C3N4 hybrid forms an unusual soft material core–shell topology with graphenic carbon nitride wrapping around SnIP. A 1D van der Waals heterostructure is formed capable of performing effective water splitting.

Journal Keywords: 1D materials; core–shell particles; hybrid materials; inorganic double helix semiconductor SnIP; water splitting

Subject Areas: Materials, Physics

Instruments: I15-Extreme Conditions