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Mapping the depleted area of silicon diodes using a micro-focused X-ray beam

DOI: 10.1088/1748-0221/14/03/P03024 DOI Help

Authors: L. Poley (Lawrence Berkeley National Laboratory) , A. Blue (University of Glasgow) , I. Bloch (Deutsches Elektronen-Synchrotron) , C. Buttar (University of Glasgow) , V. Fadeyev (University of California) , J. Fernandez-Tejero (Centro Nacional de Microelectrónica (IMB-CNM)) , C. Fleta (University of Glasgow) , J. Hacker (Infineon Technologies Austria AG) , C. Lacasta Llacer (CSIC-U. Valencia) , M. Miñano (CSIC-U. Valencia) , M. Renzmann (Deutsches Elektronen-Synchrotron) , E. Rossi (Deutsches Elektronen-Synchrotron) , C. Sawyer (STFC Rutherford Appleton Laboratory) , D. Sperlich (Humboldt-Universität zu Berlin) , M. Stegler (Deutsches Elektronen-Synchrotron) , M. Ullán (Centro Nacional de Microelectrónica (IMB-CNM)) , Y. Unno (Institute of Particle and Nuclear Study, KEK)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Journal Of Instrumentation , VOL 14 , PAGES P03024 - P03024

State: Published (Approved)
Published: March 2019
Diamond Proposal Number(s): 18807

Abstract: For the Phase-II Upgrade of the ATLAS detector at CERN, the current ATLAS Inner Detector will be replaced with the ATLAS Inner Tracker (ITk). The ITk will be an all-silicon detector, consisting of a pixel tracker and a strip tracker. Sensors for the ITk strip tracker are required to have a low leakage current up to bias voltages of −500 V to maintain a low noise and power dissipation. In order to minimise sensor leakage currents, particularly in the high-radiation environment inside the ATLAS detector, sensors are foreseen to be operated at low temperatures and to be manufactured from wafers with a high bulk resistivity of several kΩcm. Simulations showed the electric field inside sensors with high bulk resistivity to extend towards the sensor edge, which could lead to increased surface currents for narrow dicing edges. In order to map the electric field inside biased silicon sensors with high bulk resistivity, three diodes from ATLAS silicon strip sensor prototype wafers were studied with a monochromatic, micro-focused X-ray beam at the Diamond Light Source (Didcot, U.K.). For all devices under investigation, the electric field inside the diode was mapped and its dependence on the applied bias voltage was studied.

Journal Keywords: Si microstrip and pad detectors; Detector design and construction technologies and materials; Particle tracking detectors (Solid-state detectors); Radiation-hard detectors

Subject Areas: Physics, Engineering


Instruments: B16-Test Beamline

Added On: 27/03/2019 16:32

Discipline Tags:

Engineering & Technology Detectors Physics

Technical Tags:

Diffraction