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MoO 3 films grown on polycrystalline Cu: Morphological, structural, and electronic properties

DOI: 10.1116/1.5078794 DOI Help

Authors: Salvatore Macis (Università di Roma Tor Vergata; INFN, Laboratori Nazionali di Frascati) , Carla Aramo (INFN, Sezione di Napoli) , Carmela Bonavolontà (INFN, Sezione di Napoli) , Giannantonio Cibin (Diamond Light Source) , Alessandro D'elia (University of Trieste) , Ivan Davoli (Università di Roma Tor Vergata; INFN, Laboratori Nazionali di Frascati) , Mario De Lucia (INFN, Sezione di Napoli) , Massimiliano Lucci (Università di Roma Tor Vergata) , Stefano Lupi (Università di Roma La Sapienza) , Marco Miliucci (INFN, Laboratori Nazionali di Frascati) , Andrea Notargiacomo (CNR—Istituto di Fotonica e Nanotecnologie) , Carlo Ottaviani (CNR-ISM) , Claudio Quaresima (CNR-ISM) , Manuela Scarselli (Università di Roma Tor Vergata; INFN sezione Tor Vergata) , Jessica Scifo (INFN, Laboratori Nazionali di Frascati) , Massimo Valentino (INFN, Sezione di Napoli; CNR-ISASI) , Paola De Padova (CNR-ISM) , Augusto Marcelli (INFN, Laboratori Nazionali di Frascati; Rome International Centre for Material Science Superstripes, RICMASS)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Journal Of Vacuum Science & Technology A , VOL 37

State: Published (Approved)
Published: March 2019

Abstract: In this work, the authors investigated MoO3 films with thickness between 30 nm and 1 μm grown at room temperature by solid phase deposition on polycrystalline Cu substrates. Atomic force microscopy, scanning electron microscopy, and scanning tunneling microscopy revealed the presence of a homogenous MoO3 film with a “grainlike” morphology, while Raman spectroscopy showed an amorphous character of the film. Nanoindentation measurements evidenced a coating hardness and stiffness comparable with the copper substrate ones, while Auger electron spectroscopy, x-ray absorption spectroscopy, and secondary electron spectroscopy displayed a pure MoO3 stoichiometry and a work function ΦMoO3 = 6.5 eV, 1.8 eV higher than that of the Cu substrate. MoO3 films of thickness between 30 and 300 nm evidenced a metallic behavior, whereas for higher thickness, the resistance–temperature curves showed a semiconducting character.

Journal Keywords: Auger electron spectroscopy; Polycrystalline material; Scanning electron microscopy; Work functions; Transition metals; Thin films; X-ray absorption spectroscopy; Chemical elements; Nano-indentation; Stoichiometry

Subject Areas: Materials, Physics


Instruments: B18-Core EXAFS