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Strain engineering a multiferroic monodomain in thin-film Bi Fe O3

DOI: 10.1103/PhysRevApplied.11.024035 DOI Help

Authors: N. Waterfield Price (University of Oxford) , A. M. Vibhakar (University of Oxford) , R. D. Johnson (University of Oxford; ISIS Facility) , J. Schad (University of Wisconsin-Madison) , W. Saenrang (University of Wisconsin-Madison) , A. Bombardi (Diamond Light Source) , F. P. Chmiel (University of Oxford) , C. B. Eom (University of Wisconsin-Madison) , P. G. Radaelli (University of Oxford)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Physical Review Applied , VOL 11

State: Published (Approved)
Published: February 2019
Diamond Proposal Number(s): 15087

Abstract: The presence of domains in ferroic materials can negatively affect their macroscopic properties and hence their usefulness in device applications. From an experimental perspective, the measurement of materials comprising multiple domains can complicate the interpretation of the material properties and their underlying mechanisms. In general, Bi Fe O 3 films tend to grow with multiple magnetic domains and often contain multiple ferroelectric- and ferroelastic-domain variants. By growing (111)-oriented Bi Fe O 3 films on an orthorhombic Tb Sc O 3 substrate, we are able to overcome this and, by exploiting the magnetoelastic coupling between the magnetic and crystal structures, bias the growth of a given magnetic-, ferroelectric-, and structural-domain film. We further demonstrate the coupling of the magnetic structure to the ferroelectric polarization by showing that the magnetic polarity in this domain is inverted upon 180 ∘ ferroelectric switching.

Journal Keywords: Domains; Ferroelasticity; Ferroelectric domains; Magnetic domains; Multiferroics; Noncollinear magnets; Oxides; Thin films

Subject Areas: Physics, Materials

Instruments: I16-Materials and Magnetism