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Simulation of hole intersubband scattering, transport, and luminescence in p-GaAs/AlGaAs quantum cascade structures

DOI: 10.1109/ISLC.2008.4636016 DOI Help

Authors: Z. Ikonic (University of Leeds) , P. Harrison (University of Leeds) , R. Steed (Imperial College London) , M. Matthews (Imperial College London) , M. Frogley (Imperial College London) , C. Phillips (Imperial College London)
Co-authored by industrial partner: No

Type: Conference Paper
Conference: 2008 IEEE 21st International Semiconductor Laser Conference
Peer Reviewed: No

State: Published (Approved)
Published: September 2008

Abstract: Intersubband transitions within the conduction band in semiconductor quantum wells have been widely explored, which eventually led to their application in quantum well infrared photodetectors and quantum cascade lasers (QCLs). There have been considerably fewer studies of hole intersubband transitions, which are more complicated than their electronic counterparts. They are very interesting, however, because of optical activity for both TM and TE light polarization, offering the possibility of both edge and surface-normal emission or absorption. Earlier studies have mostly focused on bound- continuum transitions in GaAs/AlGaAs and Si/SiGe systems for infrared detection.

Subject Areas: Physics, Materials

Technical Areas: