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Tuning of current-induced domain wall resonance frequency using Gd doping

DOI: 10.1063/1.3481074 DOI Help

Authors: S. Lepadatu (University of Leeds) , J. S. Claydon (University of Leeds) , D. Ciudad (University of Leeds) , C. J. Kinane (ISIS Pulsed Neutron and Muon Source) , S. Langridge (ISIS, STFC Rutherford Appleton Laboratory) , S. S. Dhesi (Diamond Light Source) , C. H. Marrows (University of Leeds)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Applied Physics Letters , VOL 97 (7) , PAGES 072507

State: Published (Approved)
Published: August 2010

Abstract: The current-induced resonance frequencies of domain walls in parabolic pinning potentials are measured in Gd doped NiFe as a function of doping level. The modification of magnetic properties due to Gd doping results in an order of magnitude increase in resonance frequencies for 10% Gd doping, due to the induced out-of-plane anisotropy, and the resonance frequencies are excited at lower current densities compared to undoped NiFe. These results are reproduced using a one-dimensional model of domain wall resonance, and found to be in good agreement in the small oscillation amplitude limit.

Journal Keywords: Doping; Magnetic resonance; Current density; Magnetic anisotropy; Electric measurements

Subject Areas: Physics


Instruments: I06-Nanoscience