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Widely tunable GaAs bandgap via strain engineering in core/shell nanowires with large lattice mismatch

DOI: 10.1038/s41467-019-10654-7 DOI Help

Authors: Leila Balaghi (Helmholtz-Zentrum Dresden-Rossendorf; Technische Universität Dresden) , Genziana Bussone (PETRA III, Deutsches Elektronen-Synchrotron (DESY)) , Raphael Grifone (PETRA III, Deutsches Elektronen-Synchrotron (DESY)) , René Hübner (Helmholtz-Zentrum Dresden-Rossendorf) , Jörg Grenzer (Helmholtz-Zentrum Dresden-Rossendorf) , Mahdi Ghorbani-asl (Helmholtz-Zentrum Dresden-Rossendorf) , Arkady V. Krasheninnikov (Helmholtz-Zentrum Dresden-Rossendorf) , Harald Schneider (Helmholtz-Zentrum Dresden-Rossendorf) , Manfred Helm (Helmholtz-Zentrum Dresden-Rossendorf; Technische Universität Dresden) , Emmanouil Dimakis (Helmholtz-Zentrum Dresden-Rossendorf)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Nature Communications , VOL 10

State: Published (Approved)
Published: June 2019
Diamond Proposal Number(s): 15923

Open Access Open Access

Abstract: The realisation of photonic devices for different energy ranges demands materials with different bandgaps, sometimes even within the same device. The optimal solution in terms of integration, device performance and device economics would be a simple material system with widely tunable bandgap and compatible with the mainstream silicon technology. Here, we show that gallium arsenide nanowires grown epitaxially on silicon substrates exhibit a sizeable reduction of their bandgap by up to 40% when overgrown with lattice-mismatched indium gallium arsenide or indium aluminium arsenide shells. Specifically, we demonstrate that the gallium arsenide core sustains unusually large tensile strain with hydrostatic character and its magnitude can be engineered via the composition and the thickness of the shell. The resulted bandgap reduction renders gallium arsenide nanowires suitable for photonic devices across the near-infrared range, including telecom photonics at 1.3 and potentially 1.55 μm, with the additional possibility of monolithic integration in silicon-CMOS chips.

Subject Areas: Materials


Instruments: I07-Surface & interface diffraction

Other Facilities: PETRA III, DESY

Documents:
s41467-019-10654-7.pdf