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Magnetic transition in monolayer VSe 2 via interface hybridization

DOI: 10.1021/acsnano.9b02996 DOI Help

Authors: Wen Zhang (National University of Singapore) , Lei Zhang (National University of Singapore) , Ping Kwan Johnny Wong (National University of Singapore) , Jiaren Yuan (National University of Singapore) , Giovanni Vinai (IOM-CNR) , Piero Torelli (IOM-CNR) , Gerrit Van Der Laan (Diamond Light Source) , Yuan Ping Feng (National University of Singapore) , Andrew T. S. Wee (National University of Singapore)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Acs Nano

State: Published (Approved)
Published: July 2019

Abstract: Magnetism in monolayer (ML) VSe2 has attracted broad interest in spintronics, while existing reports have not reached consensus. Using element-specific X-ray magnetic circular dichroism, a magnetic transition in ML VSe2 has been demonstrated at the contamination-free interface between Co and VSe2. Through interfacial hybridization with a Co atomic overlayer, a magnetic moment of about 0.4 μB per V atom in ML VSe2 is revealed, approaching values predicted by previous theoretical calculations. Promotion of the ferromagnetism in ML VSe2 is accompanied by its antiferromagnetic coupling to Co and a reduction in the spin moment of Co. In comparison to the absence of this interface-induced ferromagnetism at the Fe/ML MoSe2 interface, these findings at the Co/ML VSe2 interface provide clear proof that the ML VSe2, initially with magnetic disorder, is on the verge of magnetic transition.

Journal Keywords: two-dimensional materials; monolayer transition-metal dichalcogenide; VSe2; magnetism; interfacial hybridization; antiferromagnetic coupling

Subject Areas: Materials, Physics, Chemistry

Facility: Elettra Sincrotrone Trieste