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Direct observation of delithiation as the origin of analog memristance in LixNbO2
Authors:
Sebastian A.
Howard
(Binghamton University)
,
Christopher N.
Singh
(Binghamton University)
,
Galo J.
Paez
(Binghamton University)
,
Matthew
Wahila
(Binghamton University)
,
Linda W.
Wangoh
(Binghamton University)
,
Shawn
Sallis
(Binghamton University)
,
Keith
Tirpak
(Binghamton University)
,
Yufeng
Liang
(The Molecular Foundry, Lawrence Berkeley National Laboratory)
,
David
Prendergast
(The Molecular Foundry, Lawrence Berkeley National Laboratory)
,
Mateusz
Zuba
(Binghamton University)
,
Jatinkumar
Rana
(Binghamton University)
,
Alex
Weidenbach
(Georgia Institute of Technology)
,
Timothy M.
Mccrone
(Georgia Institute of Technology)
,
Wanli
Yang
(Advanced Light Source)
,
Tien-Lin
Lee
(Diamond Light Source)
,
Fanny
Rodolakis
(Argonne National Laboratory)
,
William
Doolittle
(Georgia Institute of Technology)
,
Wei-Cheng
Lee
(Binghamton University)
,
Louis F. J.
Piper
(Binghamton University)
Co-authored by industrial partner:
No
Type:
Journal Paper
Journal:
Apl Materials
, VOL 7
State:
Published (Approved)
Published:
July 2019
Diamond Proposal Number(s):
20647

Abstract: The discovery of analog LixNbO2 memristors revealed a promising new memristive mechanism wherein the diffusion of Li+ rather than O2− ions enables precise control of the resistive states. However, directly correlating lithium concentration with changes to the electronic structure in active layers remains a challenge and is required to truly understand the underlying physics. Chemically delithiated single crystals of LiNbO2 present a model system for correlating lithium variation with spectroscopic signatures from operando soft x-ray spectroscopy studies of device active layers. Using electronic structure modeling of the x-ray spectroscopy of LixNbO2 single crystals, we demonstrate that the intrinsic memristive behavior in LixNbO2 active layers results from field-induced degenerate p-type doping. We show that electrical operation of LixNbO2-based memristors is viable even at marginal Li deficiency and that the analog memristive switching occurs well before the system is fully metallic. This study serves as a benchmark for material synthesis and characterization of future LixNbO2-based memristor devices and suggests that valence change switching is a scalable alternative that circumvents the electroforming typically required for filamentary-based memristors.
Journal Keywords: Semiconductors; Density functional theory; X-ray diffraction; Transition metals; X-ray photoelectron spectroscopy; X-ray absorption spectroscopy; Memristor
Diamond Keywords: Semiconductors
Subject Areas:
Physics,
Materials
Instruments:
I09-Surface and Interface Structural Analysis
Other Facilities: Advanced Photon Source
Added On:
25/07/2019 11:35
Documents:
mem44.pdf
Discipline Tags:
Surfaces
Hard condensed matter - electronic properties
Physics
Electronics
Materials Science
interfaces and thin films
Technical Tags:
Spectroscopy
X-ray Photoelectron Spectroscopy (XPS)
Hard X-ray Photoelectron Spectroscopy (HAXPES)