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Reactive intercalation and oxidation at the buried graphene-germanium interface

DOI: 10.1063/1.5098351 DOI Help

Authors: Philipp Braeuninger-weimer (University of Cambridge) , Oliver Burton (University of Cambridge) , Robert S. Weatherup (The University of Manchester at Harwell; University of Manchester) , Ruizhi Wang (University of Cambridge) , Pavel Dudin (Diamond Light Source) , Barry Brennan (National Physical Laboratory) , Andrew J. Pollard (National Physical Laboratory) , Bernhard C. Bayer (University of Vienna; Vienna University of Technology (TU Wien)) , Vlad P. Veigang-radulescu (University of Cambridge) , Jannik C. Meyer (University of Vienna) , Billy J. Murdoch (Newcastle University) , Peter J. Cumpson (Newcastle University) , Stephan Hofmann (University of Cambridge)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Apl Materials , VOL 7

State: Published (Approved)
Published: July 2019
Diamond Proposal Number(s): 17381

Open Access Open Access

Abstract: We explore a number of different electrochemical, wet chemical, and gas phase approaches to study intercalation and oxidation at the buried graphene-Ge interface. While the previous literature focused on the passivation of the Ge surface by chemical vapor deposited graphene, we show that particularly via electrochemical intercalation in a 0.25 N solution of anhydrous sodium acetate in glacial acetic acid, this passivation can be overcome to grow GeO2 under graphene. Angle resolved photoemission spectroscopy, Raman spectroscopy, He ion microscopy, and time-of-flight secondary ion mass spectrometry show that the monolayer graphene remains undamaged and its intrinsic strain is released by the interface oxidation. Graphene acts as a protection layer for the as-grown Ge oxide, and we discuss how these insights can be utilized for new processing approaches.

Journal Keywords: Angle-resolved photoemission spectroscopy; Graphene; Depth profiling techniques; Germanium; Secondary ion mass spectroscopy; Raman spectroscopy; Chemical vapor deposition; Interface diffusion

Subject Areas: Energy


Instruments: I05-ARPES

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