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Charge transfer and built-in electric fields between a crystalline oxide and silicon

DOI: 10.1103/PhysRevLett.123.026805 DOI Help

Authors: Z. H. Lim (University of Texas-Arlington) , N. F. Quackenbush (Binghamton University) , A. N. Penn (North Carolina State University) , M. Chrysler (University of Texas-Arlington) , M. Bowden (Pacific Northwest National Laboratory) , Z. Zhu (Pacific Northwest National Laboratory) , J. M. Ablett (Synchrotron SOLEIL) , T.-l. Lee (Diamond Light Source) , J. M. Lebeau (North Carolina State University) , J. C. Woicik (National Institute of Standards and Technology) , P. V. Sushko (Pacific Northwest National Laboratory) , S. A. Chambers (Pacific Northwest National Laboratory) , J. H. Ngai (University of Texas-Arlington)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Physical Review Letters , VOL 123

State: Published (Approved)
Published: July 2019
Diamond Proposal Number(s): 17449

Abstract: We report charge transfer and built-in electric fields across the epitaxial SrNb x Ti 1 − x O 3 − δ / Si ( 001 ) interface. Electrical transport measurements indicate the formation of a hole gas in the Si and the presence of built-in fields. Hard x-ray photoelectron measurements reveal pronounced asymmetries in core-level spectra that arise from these built-in fields. Theoretical analysis of core-level spectra enables built-in fields and the resulting band bending to be spatially mapped across the heterojunction. The demonstration of tunable charge transfer, built-in fields, and the spatial mapping of the latter, lays the groundwork for the development of electrically coupled, functional heterojunctions.

Journal Keywords: Electrical conductivity; Growth; Hall effect; Surface & interfacial phenomena

Subject Areas: Physics


Instruments: I09-Surface and Interface Structural Analysis

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jgj33ddd.pdf

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