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Tracing the initial state of surface oxidation in black phosphorus

DOI: 10.1016/j.apsusc.2019.144341 DOI Help

Authors: Kyoung Hun Oh (Yonsei University; Agency for Defense Development, Korea) , Sung Won Jung (Diamond Light Source) , Keun Su Kim (Yonsei University)
Co-authored by industrial partner: No

Type: Journal Paper
Journal: Applied Surface Science

State: Published (Approved)
Published: October 2019

Abstract: Black phosphorus has emerged as a class of two-dimensional semiconductors, but its degradation caused by surface oxidation upon exposure to ambient conditions has been a serious issue. A key to understanding the mechanism of surface oxidation is the initial-state structure that has remained elusive. We study the initial state of surface oxidation in black phosphorus by low-temperature core-level photoelectron spectroscopy with the in situ dosage of O2 in the ultrahigh-vacuum condition. Our high-resolution P 2p core-level spectra show two clearly distinct initial-state components of P atoms that have one and two neighboring O atoms, respectively. It is followed by the rapid growth of other higher binding-energy components originating from incomplete P2O5 bonded to black phosphorus with one or two less bonds to O atoms. The variation in the proportion of these components reveals the initial-state structure of dissociative adsorption and its evolution to the final form of phosphorus oxides.

Journal Keywords: Black phosphorus; surface oxidation; photoelectron spectroscopy

Diamond Keywords: Semiconductors

Subject Areas: Physics, Materials

Facility: Advanced Light Source (ALS); Ultraviolet Synchrotron Orbital Radiation Facility (UVSOR)

Added On: 31/10/2019 10:32

Discipline Tags:

Materials Science Physics Surfaces

Technical Tags: